• Title/Summary/Keyword: Main Gate

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Analysis of Radio Frequency characteristics for Double Gate MOSFET (Double Gate MOSFET의 RF특성분석)

  • 김근호;고석웅;정학기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2003.05a
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    • pp.690-692
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    • 2003
  • In this paper, we have investigated characteristics of radio frequency for double gate MOSFET with 50nm main gate in according to variation of side gate length. We could know the increasement of cut-off frequency as the side gate length is lower. As a result, we could know the most optimum performance characteristics when side gate length was 70nm. In this time, the DG MOSFET of side gate with 70nm has very high cut-off frequency like 41.4GHz.

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Sign and Symbol Types Shown at the Main Gate of University in Korea (대학 정문에 나타난 기호와 상징의 유형)

  • Kim Dae-Hyun
    • Journal of the Korean Institute of Landscape Architecture
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    • v.33 no.2 s.109
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    • pp.92-99
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    • 2005
  • The main gate of a university is a element of landscape which improves the quality of campus as well as demarcates the boundary and publicizes the image of university. Therefore, each university strives to differentiate its main gate from that of other universities with a unique form. This research investigates the signs and symbols shown at the university's main gate of 18 universities in Korea, and also presents useful design tips with the objective of bearing the spirit of the campus and its founding ideology. The results of this research as follows: Icons of Sign for 18 universities can be classified into five separate categories: things, human, animal, character, and metaphor. Examples of the 'things' icons include a pen nib, the sun, the cross, a big bell, and so on. Also, the meaning of the represented symbols can be grouped in three separate categories: university's development, contribution to society, and mining of knowledge. From the three category, university development symbol is the most likely to be used.

Analysis of Electrical Characteristics for Double Gate MOSFET (Double Gate MOSFET의 전기적 특성 분석)

  • 김근호;김재홍;고석웅;정학기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.05a
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    • pp.261-263
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    • 2002
  • CMOS devices have scaled down to sub-50nm gate to achieve high performance and high integration density. Key challenges with the device scaling are non-scalable threshold voltage( $V^{th}$ ), high electric field, parasitic source/drain resistance, and $V^{th}$ variation by random dopant distribution. To solve scale-down problem of conventional structure, a new structure was proposed. In this paper, we have investigated double-gate MOSFET structure, which has the main-gate and the side-gates, to solve these problem.

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A Study on Characteristics of Current-Voltage Relation by sizes for Double Gate MOSFET (DGMOSFET의 크기에 따른 전류-전압특성변화에 관한 연구)

  • Jung, Hak-Kee;Na, Young-Il;Lee, Jae-Hyung
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • v.9 no.2
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    • pp.884-886
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    • 2005
  • In this paper, we have investigated characteristics of current-voltage for double gate MOSFET with main gate and side gate. Investigated current-voltage characteristics of channel length changed len호 of channel from 1${\mu}$m to 3${\mu}$m. Also, compare and analyzed characteristics of changed of operation temperature changing current that is dignity. gate voltage could know 2V that is superior than device characteristics of current voltage characteristic in 77K acts in room temperature when approved.

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Dynamic characteristics for Double Gate MOSFET (더블게이트 MOSFET의 동적 특성)

  • Ko Suk-woong;Jung Hak-kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.9 no.8
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    • pp.1749-1753
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    • 2005
  • In this paper, we have investigated electrical characteristics by action temperature of double gate structure that have main gate and side gate. Could know current-voltage characteristic is superior in ultra low temperature (77 K) as well as in room temperature (300 K). Also, conditions of most suitable for get superior DG MOSFET's dynamic characteristics are main gate length of 50nm and side gate length of 70nm and could know that should be approved more than voltage 2V. Also, this DG MOSFET usefully use may as digital device because on-off characteristic is superior.

Characteristics analysis of Sub-50nm Double Gate MOSFET (Sub-50nm Double Gate MOSFET의 특성 분석)

  • 김근호;고석웅;이종인;정학기
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.486-489
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    • 2002
  • In this paper, we have investigated characteristics of sub-50nm double gate MOSFET. From I-V characteristics, we obtained =510$\mu$A/${\mu}{\textrm}{m}$ at VMG=VDS=1.5V and VSG=3.0V. Then, the transconductance is 111$\mu$A/V, subthreshold slope is 86mV/dec and DIBL (Drain Induced Barrier Lowering) is 51.3mV. Also, we have presented that TCAD simulator is suitable for device simulation.

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Arrangement Changes of the Inner Gate and Gate-pavilion in Temple Construction of Joseon (조선시대 사찰건축에서 정문(正門)과 문루(門樓)의 배치관계 변화)

  • Hong, Byeong-Hwa;Kim, Seong-Woo
    • Journal of architectural history
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    • v.18 no.1
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    • pp.51-65
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    • 2009
  • The inner gate(The last gate inside a temple, facing the main hall) is not a well-known part in the temple construction of Joseon. This study is focused on seeking truth about the inner gate arrangement of the existing temples as well as proving that it has changed while maintaining a certain relationship with the gate-pavilion arrangement. The inner gate is related to the Cheondo ritual which is letting the dead people's spirits go to heaven, mainly performed in Buddhism, and it has been demonstrated that the inner gate has gradually disappeared as the importance of gate-pavilions has been emphasized along with the changes of the ritual. The inner gate was a common construction before the 18th Century but since that time, it has gradually disappeared and finally it faced the main hall as the gate-pavilion and made the 4 halls-centered arrangement with the temple dormitories on both sides.

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Architectural Plan And layout of Buddhist Temples(Wangsil-Wonchal) on through the Study of Records about Temple's Foundation during King Sejo(世祖) Period (기문(記文)으로 본 세조(世祖)연간 왕실원찰(王室願刹)의 전각평면과 가람배치)

  • Lee, Kyung-Mee
    • Journal of architectural history
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    • v.18 no.5
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    • pp.81-100
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    • 2009
  • The study on Buddhism architecture in early Joseon dynasty was inactive. The period of King Sejo is important for studying the trend of Buddhism architecture in early Joseon, that was transmitted from the end of Goryeo dynasty, but it was difficult to know its exact situation due to lack of related records. The records were all written by Kim Su-ohn, which are Wongaksabi' 'Sangwonsajungchanggi' 'Bongseonsagi 'Geonginsajungchanggi'. The main hall was mainly second floor and there were necessarily annexed buildings at the right and left of the main hall. So the plane figure of $\Box\Box\Box$ was shown. It was a main stream for main hall. This layout may be referred to search for the origin of the layout in courtyard based structure(中庭形) in the late Joseon dynasty. Most of temples had 3 gates. Some part of horizontal corridor was used as 2 gates and the outer gate, far from main hall, was without corridor. The gate leading to front yard of main hall was called front gate, the next middle gate and the outer gate was Oisamun(外沙門) or Samun(沙門). Im most of the temples, people could enter into the front yard through pavilion which had the function of bell tower. The pavilions were located between front gate and first corridor. It is thought that this layout of the place for making bean curd outside the temple area will contribute to different studies on temples making bean cure in the future. The records about temples's foundation studied above are a little different between temples, but have more similarities. There common denominators represent the architecture tendency of Buddhist temples in the related period. It is thought that such a tendency was also shown on architecture of other temples during the reign of King Sejo as well as Buddhist temples.

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A Dual Gate AlGaN/GaN High Electron Mobility Transistor with High Breakdown Voltages (높은 항복 전압 특성을 가지는 이중 게이트 AlGaN/GaN 고 전자 이동도 트랜지스터)

  • Ha Min-Woo;Lee Seung-Chul;Her Jin-Cherl;Seo Kwang-Seok;Han Min-Koo
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.1
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    • pp.18-22
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    • 2005
  • We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.

A Study on the Characteristics of the Form and the Preference of the Main Gates of Universities in Korea (대학교문의 조형적 특성과 선호도에 관한 연구)

  • 김동찬;성현지
    • Journal of the Korean Institute of Landscape Architecture
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    • v.27 no.1
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    • pp.110-121
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    • 1999
  • The purpose of this study is to focus on the characteristics of the form and preference of the main gates of universities. The gate of a university have both functions and artistic design aspects. Fifty-two universities selected for this study were placed all around country except for Je-ju island. The following two research methods were used for this study. 1) an analysis of form character through a classification of the types. 2) and analysis of preference to the gates through a side show. The results are summarized as follows: 1. Main gates of universities were classified by covered-type and uncovered-type in existence of cover. And they were classified by eighteen types in detail. 2. Visual preference have been analyed by using the regression, the result is as follows: Y=-0.357+0.630 X$_4$+0.377X$_1$+0.075X$_2$-0.015X$_3$($R^2$=0.971, X$_4$;harmony, X $_1$;speciality, X$_2$;softness, X$_3$;complex) 3. The gate of Chung-Ang university(Ahn Sung campus) is the highest of all the universities at the average of preference 4.32 through result of slide show. Covered type has a higher preference than uncovered type. This has a good modification and decoration in front side type of main gate.

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