• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.690-692
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• 2003

본 논문에서는 main gate 50nm를 갖는 double gate MOSFET에서 side gate의 길이변화에 따른 주파수 특성을 조사하였다. side gate길이가 감소할수록 컷오프 주파수는 증가하는 것을 볼 수 있었다. 결과적으로 side gate 길이가 70nm일 때 최적의 동작 특성을 보였으며, 이때 컷오프 주파수는 41.4GHz로 매우 높은 컷오프 주파수를 갖음을 알았다.

• 한국조경학회지
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• 제33권2호
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• pp.92-99
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• 2005

The main gate of a university is a element of landscape which improves the quality of campus as well as demarcates the boundary and publicizes the image of university. Therefore, each university strives to differentiate its main gate from that of other universities with a unique form. This research investigates the signs and symbols shown at the university's main gate of 18 universities in Korea, and also presents useful design tips with the objective of bearing the spirit of the campus and its founding ideology. The results of this research as follows: Icons of Sign for 18 universities can be classified into five separate categories: things, human, animal, character, and metaphor. Examples of the 'things' icons include a pen nib, the sun, the cross, a big bell, and so on. Also, the meaning of the represented symbols can be grouped in three separate categories: university's development, contribution to society, and mining of knowledge. From the three category, university development symbol is the most likely to be used.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 춘계종합학술대회
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• pp.261-263
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• 2002

CMOS 소자들은 고속 동자 및 고집적을 위해 50nm이하로 작아지고 있다. 소자 scaling에서 중요한 것은 스케일 되지 않은 문턱 전압($V^{th}$ ), 고 전계, 기생 소스/드레인 저항과 임의의 dopant 분배에 의한 $V^{th}$ 변화율이다. 이런 일반적인 소자의 scaling down 문제들을 해결하기 위해 새로운 소자의 구조가 제안된다. 본 논문에서는 이런 문제들을 해결하기 위해 main-gate와 side-gates를 갖는 double-gate MOSFET에 대해 조사하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2005년도 추계종합학술대회
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• pp.884-886
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• 2005

본 논문에서는 main gate와 side gate를 가지는 DGMOSFET의 전류전압특성을 조사하였다. 채널의 길이를 1${\mu}$m에서 5${\mu}$m까지 변화시켜 채널길이에 따른 전류전압특성을 조사하였다. 또한 드레인 전류를 변화시켜 동작온도에 따른 특성변화를 비교${\cdot}$분석하였다. 게이트 전압이 2V 인가되었을 때, 77K에서의 전류전압특성이 300K에서 동작한 소자특성보다 우수하다는 것을 알 수 있었다.

• 한국정보통신학회논문지
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• 제9권8호
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• pp.1749-1753
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• 2005

본 논문에서는 메인게이트와 사이드게이트를 갖는 더블게이트 구조의 동작 온도에 따른 전기적 특성들을 조사하였다. 실온(300K)에서 뿐만 아니라 극저온(77K)에서도 전류-전압특성이 우수함을 알 수 있었다. 또한 우수한 DG MOSFET의 동적 특성들을 얻기 위한 최적의 조건들은 메인게이트 길이가 50nm이고 사이드게이트 길이가 70nm, 그리고 드레인 전압이 2V이상 인가되어야 함을 알 수 있었다. 실온에서 문턱전압은 약0.358V, 77K에서는 약 0.513V를 얻을 수 있었다. 또한 온-오프 특성이 우수하여 디지털 소자로서 유용하게 사용될 수 있을 것이다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.486-489
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• 2002

본 논문에서는 50nm 이하의 double gate MOSFET의 특성을 조사하였다. 1.5V의 main gate 전압과 3V의 side gate 전압이 인가될 때 I-V 특성으로부터 IDsat=510$\mu$A/$\mu\textrm{m}$을 얻을 수 있었다. 이때, 전달 컨덕턴스는 111$\mu$A/V, subthreshold slope는 86mV/dec, DIBL값은 51.3mV이다. 그밖에 TCAD tool이 소자 시뮬레이터로서 적합함을 나타내었다.

• 건축역사연구
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• 제18권1호
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• pp.51-65
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• 2009

The inner gate(The last gate inside a temple, facing the main hall) is not a well-known part in the temple construction of Joseon. This study is focused on seeking truth about the inner gate arrangement of the existing temples as well as proving that it has changed while maintaining a certain relationship with the gate-pavilion arrangement. The inner gate is related to the Cheondo ritual which is letting the dead people's spirits go to heaven, mainly performed in Buddhism, and it has been demonstrated that the inner gate has gradually disappeared as the importance of gate-pavilions has been emphasized along with the changes of the ritual. The inner gate was a common construction before the 18th Century but since that time, it has gradually disappeared and finally it faced the main hall as the gate-pavilion and made the 4 halls-centered arrangement with the temple dormitories on both sides.

• 건축역사연구
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• 제18권5호
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• pp.81-100
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• 2009

The study on Buddhism architecture in early Joseon dynasty was inactive. The period of King Sejo is important for studying the trend of Buddhism architecture in early Joseon, that was transmitted from the end of Goryeo dynasty, but it was difficult to know its exact situation due to lack of related records. The records were all written by Kim Su-ohn, which are Wongaksabi' 'Sangwonsajungchanggi' 'Bongseonsagi 'Geonginsajungchanggi'. The main hall was mainly second floor and there were necessarily annexed buildings at the right and left of the main hall. So the plane figure of $\Box\Box\Box$ was shown. It was a main stream for main hall. This layout may be referred to search for the origin of the layout in courtyard based structure(中庭形) in the late Joseon dynasty. Most of temples had 3 gates. Some part of horizontal corridor was used as 2 gates and the outer gate, far from main hall, was without corridor. The gate leading to front yard of main hall was called front gate, the next middle gate and the outer gate was Oisamun(外沙門) or Samun(沙門). Im most of the temples, people could enter into the front yard through pavilion which had the function of bell tower. The pavilions were located between front gate and first corridor. It is thought that this layout of the place for making bean curd outside the temple area will contribute to different studies on temples making bean cure in the future. The records about temples's foundation studied above are a little different between temples, but have more similarities. There common denominators represent the architecture tendency of Buddhist temples in the related period. It is thought that such a tendency was also shown on architecture of other temples during the reign of King Sejo as well as Buddhist temples.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.18-22
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• 2005

We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.

• 한국조경학회지
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• 제27권1호
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• pp.110-121
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• 1999

The purpose of this study is to focus on the characteristics of the form and preference of the main gates of universities. The gate of a university have both functions and artistic design aspects. Fifty-two universities selected for this study were placed all around country except for Je-ju island. The following two research methods were used for this study. 1) an analysis of form character through a classification of the types. 2) and analysis of preference to the gates through a side show. The results are summarized as follows: 1. Main gates of universities were classified by covered-type and uncovered-type in existence of cover. And they were classified by eighteen types in detail. 2. Visual preference have been analyed by using the regression, the result is as follows: Y=-0.357+0.630 X$_4$+0.377X$_1$+0.075X$_2$-0.015X$_3$($R^2$=0.971, X$_4$;harmony, X $_1$;speciality, X$_2$;softness, X$_3$;complex) 3. The gate of Chung-Ang university(Ahn Sung campus) is the highest of all the universities at the average of preference 4.32 through result of slide show. Covered type has a higher preference than uncovered type. This has a good modification and decoration in front side type of main gate.