Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2003.05a
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- Pages.690-692
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- 2003
Analysis of Radio Frequency characteristics for Double Gate MOSFET
Double Gate MOSFET의 RF특성분석
Abstract
In this paper, we have investigated characteristics of radio frequency for double gate MOSFET with 50nm main gate in according to variation of side gate length. We could know the increasement of cut-off frequency as the side gate length is lower. As a result, we could know the most optimum performance characteristics when side gate length was 70nm. In this time, the DG MOSFET of side gate with 70nm has very high cut-off frequency like 41.4GHz.
본 논문에서는 main gate 50nm를 갖는 double gate MOSFET에서 side gate의 길이변화에 따른 주파수 특성을 조사하였다. side gate길이가 감소할수록 컷오프 주파수는 증가하는 것을 볼 수 있었다. 결과적으로 side gate 길이가 70nm일 때 최적의 동작 특성을 보였으며, 이때 컷오프 주파수는 41.4GHz로 매우 높은 컷오프 주파수를 갖음을 알았다.