• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.193-197
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• 2003

As one of the core technologies in the field of the optical communication with WDM, the optical cross connector with movements of micro mirrors is getting important day by day. The packaging structure of 2-dimensional NxN MOEMS switch should be determined by the harmonization of the following items such as the geometrical compatability between optical and structural components, the characteristics of optical input and output parts with device, and the electrical performance for the operation of micro mirrors. Therefore, the packaging process could be defined as the integrated technology completed by the optical and electrical science and the material science for the understanding of its thermo-mechanical properties with packaging materials. In the present study, the harmonization between the optical and structural components as well as the optical characteristics of lens system used will be investigated.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.4
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• pp.49-53
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• 2009

In order to investigate the formation behavior of hollow Cu via for MEMS packaging, we observed the microstructure of the Cu vias and measured the average thickness and the thickness deviation with variations of pulse-reverse pulse current density and electrodeposition time. With electrodeposition for 3 hours at the pulse and reverse pulse current densities of $-5\;mA/cm^2$ and $15\;mA/cm^2$, the average thickness and the thickness deviation of the Cu vias were $5\;{\mu}m$ and $0.63\;{\mu}m$, respectively. With increasing the electrodeposition time to 6 hours, it was possible to form the Cu vias, of which the average thickness and thickness variation of the Cu vias were $10\;{\mu}m$ and $1\;{\mu}m$, respectively. With increasing the pulse and reverse pulse current densities to $-10\;mA/cm^2$ and $30\;mA/cm^2$, Cu vias of uniform thickness could not be formed due to the faster increase of the thickness deviation than that of the average thickness with increasing the electrodeposition time.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.31-39
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• 2008

To develop the MEMS cap bonding process without cavity formation, we electroplated Cu/Sn rim structures and measured the bonding characteristics for the Cu/Sn rims of $25{\sim}400{\mu}m$ width. As the effective device-mounting area ratio decreased and the failure strength ratio increased for wider Cu/Sn rim, these two properties were estimated to be optimized for the Cu/Sn rim with 150 ${\mu}m$ width. Complete bonding was accomplished at the whole interfaces of the Cu/Sn packages with the rim widths of 25 ${\mu}m$ and 50 ${\mu}m$. However, voids were observed locally at the interfaces with the rim widths larger than 100 ${\mu}m$. Such voids were formed by local non-contact between the upper and lower rims due to the surface roughness of the electroplated Sn.

• Smart Structures and Systems
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• v.6 no.3
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• pp.225-238
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• 2010

We report on the development of a new technology for the fabrication of Micro-Electro-Mechanical-System (MEMS) strain sensors to realize a novel type of crackmeter for health monitoring of ageing civil infrastructures. The fabrication of micromachined silicon MEMS sensors based on a Silicon On Insulator (SOI) technology, designed according to a Double Ended Tuning Fork (DETF) geometry is presented, using a novel process which includes a gap narrowing procedure suitable to fabricate sensors with low motional resistance. In order to employ these sensors for crack monitoring, techniques suited for bonding the MEMS sensors on a steel surface ensuring good strain transfer from steel to silicon and a packaging technique for the bonded sensors are proposed, conceived for realizing a low-power crackmeter for ageing infrastructure monitoring. Moreover, the design of a possible crackmeter geometry suited for detection of crack contraction and expansion with a resolution of $10{\mu}m$ and very low power consumption requirements (potentially suitable for wireless operation) is presented. In these sensors, the small crackmeter range for the first field use is related to long-term observation on existing cracks in underground tunnel test sections.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1718-1723
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• 2007

The Probe Card is a test component which is to classify the good semiconductor chips before the packaging. The yield of semiconductor product can be better from analysis of probe test information. Recently the technology of the probe card needs narrow width and large amount of probe tip. In this research, the probe tip based on the MEMS(micro electro mechanical system) technology was designed and fabricated to improve the reliability of the test and to meet 2-dimensional Array of tip. The mechanical and electrical properties of proposed tip were evaluated and it has over 100,000 of repetition times in the condition of 5gf, $20{\mu}m$ Over Drive.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.223-227
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• 2003

A new flexible electronic packaging technology and its medical applications are presented. Conventional silicon chips and electronic modules can be considered as "mechanically rigid box." which does not bend due to external forces. This mechanically rigid characteristic prohibits its applications to wearable systems or bio-implantable devices. Using current MEMS (Microelectromechanical Systems) technology. a surface micromachined flexible polysilicon sensor array and flexible electrode array fer neural interface were fabricated. A chemical thinning technique has been developed to realize flexible silicon chip. To combine these techniques will result in a realization of truly flexible sensing modules. which are suitable for many medical applications.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.16 no.12 s.117
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• pp.1272-1278
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• 2006

This paper presents a novel MEMS condenser microphone with rigid backplate to enhance acoustic characteristics. The MEMS condenser microphone consists of membrane and backplate chips which are bonded together by gold-tin(Au/Sn) eutectic solder bonding. The membrane chip has $2.5mm{\times}2.5mm$, 0.5${\mu}m$ thick low stress silicon nitride membrane, $2mm{\times}2mm$ Au/Ni/Cr membrane electrode, and 3${\mu}m$ thick Au/Sn layer. The backplate chip has $2mm{\times}2mm$, 150${\mu}m$ thick single crystal silicon rigid backplate, $1.8mm{\times}1.8mm$ backplate electrode, and air gap, which is fabricated by bulk micromachining and silicon deep reactive ion etching. Slots and $50{\sim}60{\mu}m$ radius circular acoustic holes to reduce air damping are also formed in the backplate chip. The fabricated microphone sensitivity is 39.8 ${\mu}V/Pa$(-88 dB re. 1 V/Pa) at 1 kHz and 28 V polarization voltage. The microphone shows flat frequency response within 1 dB between 20 Hz and 5 kHz.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1240_1241
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• 2009

In this paper, sol-gel-spin coated $Pb(ZrTi)O_3$ thin film with $ZrO_2$ buffer-layer and $PbTiO_3$ seed-layer was investigated for vibration MEMS energy harvester to scavenge power from ambient vibration via d33 piezoelectric mode. Piezoelectric thin film deposition techniques on insulating layer is the important key for $d_{33}$ mode of piezoelectric vibration energy harvester. $ZrO_2$ buff-layer was utilized as an insulating layer. $PbTIO_3$ seed-layer was applied as an inter-layer between PZT and $ZrO_2$ layer to improve the crystalline of PZT thin film. The fabricated PZT thin film had a remanent polarization of 5.3uC/$cm^2$ and the coercive field of 60kV/cm. The fabricated energy harvester using PZT thin film with PTO seed-layer generated 1.1uW of electrical power to $2.2M{\Omega}$ of load with $4.4V_{pvp}$ from vibration of 0.39g at 528Hz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.511-512
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• 2008

Micro-pads made of PDMS(polydimethylsiloane) can be mechanical shock or vibration absorber because of its contractibility. Fabrication of micro-pads and techniques of separation from substrate and attachment to new substrate are developed. Three micron thick PDMS pads were fabricated by imprinting lithography.