• ETRI Journal
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• 제30권5호
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• pp.644-652
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• 2008

In this paper, a low-power CMOS interface circuit is designed and demonstrated for capacitive sensor applications, which is implemented using a standard 0.35-${\mu}m$ CMOS logic technology. To achieve low-power performance, the low-voltage capacitance-to-pulse-width converter based on a self-reset operation at a supply voltage of 1.5 V is designed and incorporated into a new interface circuit. Moreover, the external pulse signal for the reset operation is made unnecessary by the employment of the self-reset operation. At a low supply voltage of 1.5 V, the new circuit requires a total power consumption of 0.47 mW with ultra-low power dissipation of 157 ${\mu}W$ of the interface-circuit core. These results demonstrate that the new interface circuit with self-reset operation successfully reduces power consumption. In addition, a prototype wireless sensor-module with the proposed circuit is successfully implemented for practical applications. Consequently, the new CMOS interface circuit can be used for the sensor applications in ubiquitous sensor networks, where low-power performance is essential.

• 전기전자학회논문지
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• 제22권3호
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• pp.548-557
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• 2018

In this paper, Asynchronous Self-Power Gating technique (ASPG) is used to reduce consumption power in asynchronous digital watch application. The power gating control signal is automatically generated by internal system operation characteristics instead of using replica circuit delay or four-phase handshaking protocol. Isolation cell is designed to insert it between power gating domain and normal operation domain. By using self-power gating circuit, asynchronous digital watch application consumes very low power and maintains data during sleep mode. The comparison results show the proposed ASPG technique saves leakage power up to 40.47% and delay time is reduced to 71% compared to the conventional circuit.

• Journal of Welding and Joining
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• 제34권3호
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• pp.40-46
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• 2016

The digital controlled SMA welding power source having the hot start current and short circuit waveform control was developed. The inverter power controller was used an analog circuit and the short circuit waveform controller was developed using a 8-bit MCU. For the evaluation of the developed SMA welding power source it were compared with a domestic welding power sources. Using the high titanium oxide type and low hydrogen type electrodes, the characteristics of hot start and short circuit was evaluated. Developed SMA welding power source shows good start performance. Also, arc stability and low current weldability were improved by the short circuit waveform control.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1998년도 추계종합학술대회 논문집
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• pp.703-706
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• 1998

This paper presents an efficient substrate-bias generator(SBG)for low-power, high-density DRAM's The proposed SBG can supply stable voltage with switching the supply voltage of driving circuit, and it can substitude the small capacitance for the large capacitance. The charge pumping circuit of the SBG suffere no VT loss and is to be applicable to low-voltage DRAM's. Also it can reduce the power consumption to make VBB because of it's high pumping efficiency. Using biasing voltage with positive temperature coefficient, VBB level detecting circuit can detect constant value of VBB against temperature variation. VBB level during VBB maintaining period varies 0.19% and the power dissipation during this period is 0.16mw. Charge pumping circuit can make VBB level up to -1.47V using VCC-1.5V, and do charge pumping operation one and half faster than the conventional ones. The temperature dependency of the VBB level detecting circuit is 0.34%. Therefore the proposed SBG is expected to supply a stable VBB with less power consumption when it is used in low power DRAM's.

• Journal of information and communication convergence engineering
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• 제9권3호
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• pp.301-304
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• 2011

This paper describes the possibility of a low-power, high-resolution fingerprint sensor chip. A modified capacitive detection circuit of charge sharing scheme is proposed, which reduces the static power dissipation and increases the voltage difference between a ridge and valley more than conventional circuit. The detection circuit is designed and simulated in 3.3V, 0.35${\mu}$m standard CMOS process, 40MHz condition. The result shows about 27% power dissipation reduction and 90% improvement of difference between a ridge and valley sensing voltage. The proposed circuit is more stable and effective than a typical circuit.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2011년도 춘계학술대회
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• pp.692-695
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• 2011

This paper describes the possibility of a low-power, high-resolution fingerprint sensor chip. A modified capacitive detection circuit of charge sharing scheme is proposed, which reduces the static power dissipation and increases the voltage difference between a ridge and valley more than conventional circuit. The detection circuit is designed and simulated in 3.3V, $0.35{\mu}m$ standard CMOS process, 40MHz condition. The result shows about 35% power dissipation reduction and 90% improvement of difference between a ridge and valley sensing voltage. The proposed circuit is more stable and effective than a typical circuit.

• 한국전기전자재료학회논문지
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• 제29권11호
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• pp.676-680
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• 2016

This paper describes a low voltage detection circuit used in the semiconductor chips. The circuit was composed of a detection part of the CMOS structure as three stages and two inverters. The output of the low voltage detection circuit become to 'high' from 'low', when the power supply voltage falls below 80%. When the power supply voltage is 5 V, it was detected at 4 V point. The proposed low voltage detection circuit can be easily applied only by changing the resister and the capacitor without structural change in a wide range of power supply voltage.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.563-569
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• 2015

For some low-frequency applications such as power-related circuits, NEM relays have been known to show better performance than MOSFETs. For example, in a step-down charge pump circuit, the NEM relays showed much smaller layout area and better energy efficiency than MOSFETs. However, severe process variations of NEM relays hinder them from being widely used in various low-frequency applications. To mitigate the process-variation problems of NEM relays, in this paper, a new NEM-relay charge pump circuit with the self-adjustment is proposed. By self-adjusting a pulse amplitude voltage according to process variations, the power consumption can be saved by 4.6%, compared to the conventional scheme without the self-adjustment. This power saving can also be helpful in improving the power efficiency of the proposed scheme. From the circuit simulation of NEM-relay charge pump circuit, the efficiency of the proposed scheme is improved better by 4.1% than the conventional.

• 한국위성정보통신학회논문지
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• 제8권3호
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• pp.10-14
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• 2013

본 논문에서는 저전력 기술인 DVFS (Dynamic Voltage Frequency Scaling) 응용을 위하여, 동작주파수의 변화에도 소비전력이 일정한 특성을 갖는 전류모드 회로를 적용함에 있어서, 저속 동작에서 소비전력이 과다한 전류모드 회로의 문제점을 전류모드 회로에서 sub-threshold 영역 동작의 MOSFET을 적용함으로써 소비전력을 최소화하는 설계기술을 소개한다. 회로설계는 MOSFET BSIM 3모델을 사용하였으며, 시뮬레이션한 결과, strong-inversion 동작일 때 소비전력은 $900{\mu}W$이었으나, sub-threshold 영역으로 동작하였을 때, 소비전력이 $18.98{\mu}W$가 되어, 98 %의 소비전력의 절감효과가 있음을 확인하였다.

• 전기전자학회논문지
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• 제22권2호
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• pp.480-483
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• 2018

Wireless power transfer (WPT) is the technology that forces the power to transmit electromagnetic field to an electrical load through an air gap without interconnecting wires. This technology is widely used for the applications from low power smartphone to high power electric railroad. In this paper, the model of wireless power transfer circuit for the low power system is designed for a resonant frequency of 13.45 MHz. Also, a feedback WPT circuit to improve the power transfer efficiency is proposed and shown better performance than the original open WPT circuit, and the methodology for power efficiency improvement is studied as the coupling coefficient increases above 0.01, at which the split frequency is made.