• Journal of Electrical Engineering and Technology
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• 제11권4호
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• pp.810-819
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• 2016

Uncoordinated charging of large-scale electric vehicles (EVs) will have a negative impact on the secure and economic operation of the power system, especially at the distribution level. Given that the charging load of EVs can be controlled to some extent, research on the optimal charging control of EVs has been extensively carried out. In this paper, two possible smart charging scenarios in China are studied: centralized optimal charging operated by an aggregator and decentralized optimal charging managed by individual users. Under the assumption that the aggregators and individual users only concern the economic benefits, new load peaks will arise under time of use (TOU) pricing which is extensively employed in China. To solve this problem, a simple incentive mechanism is proposed for centralized optimal charging while a rolling-update pricing scheme is devised for decentralized optimal charging. The original optimal charging models are modified to account for the developed schemes. Simulated tests corroborate the efficacy of optimal scheduling for charging EVs in various scenarios.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.5-6
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• 2005

High performance SiGe heterostructure metal-oxide-semiconductor field effect transistors(MOSFETs) were fabricated using well-controlled delta-doping of boron and SiGe/Si heterostructure epitaxal layers grown by reduced pressure chemical vapor deposition. In this paper, we report 1/f noise characteristics of the SiGe MOSFETs measured under various bias conditions of the gate and drain voltages changing in linear operation regions. From the noise spectral density, we found that the gate and drain voltage dependence of the noise represented same features, as usually scaled with $f^1$. However, 1/f noise was found to be much lower in the device with boron delta-doped layer, by a factor of $10^{-1}\sim10^{-2}$ in comparion with the device fabricated without delta-doped layer. 1/f noise property of delta-doped device looks important because the device may replace bipolar transistors most commonly embedded in high-frequency oscillator circuits.

• Applied Science and Convergence Technology
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• 제25권3호
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• pp.51-55
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• 2016

The surface treatment of a titanium implant is investigated with a non-thermal atmospheric pressure plasma jet. The plasma jet is generated by the injection of He and $O_2$ gas mixture with a sinusoidal driving voltage of 3 kV or more and with a driving frequency of 20 kHz. The generated plasma plume has a length up to 35 mm from the jet outlet. The wettability of 4 different titanium surfaces with plasma treatments was measured by the contact angle analysis. The water contact angles were significantly reduced especially for $O_2/He$ mixture plasma, which was explained with the optical emission spectroscopy. Consequently, plasma treatment enhances wettability of the titanium surface significantly within the operation time of tens of seconds, which is practically helpful for tooth implantation.

• 대한임베디드공학회논문지
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• 제14권1호
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• pp.33-41
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• 2019

We propose an embedded solution to design a high-speed and high-accuracy 16bit analog-digital signal processing interface for the control systems using various external analog signals. Choosing TMS320F28377D micro controller unit (MCU) featuring high-performance processing in the 32-bit floating point operation, low power consumption, and various I/O device supports, we design and build the proposed system that supports both 16-bit analog-digital converter (ADC) interface and high precision digital-analog converter (DAC) interface. The ADC receives voltage-level differential signals from fully differential amplifiers, and the DAC communicates with MCU through 50 MHz bandwidth high-fast serial peripheral interface (SPI). We port the boot loader and device drivers to the implemented board, and construct the firmware development environment for the application programming. The performance of the entire implemented system is demonstrated by analog-digital signal processing tests, and is verified by comparing the test results with those of existing similar systems.

• 로봇학회논문지
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• 제16권1호
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• pp.41-48
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• 2021

In this paper, we review papers which report to the all solid-state electroactive polymer-based tunable lens. Since electroactive polymer-based tunable lenses change their focal length by responding to electric stimuli, it can be minimized the size and weight of optical modules. Thus, it has been received attention in the robot, mobile device and display industry. The all solid-state electroactive polymer-based tunable lenses can be classified into two categories depending on the classification of materials: ionic electroactive polymer-based lenses and non-ionic electroactive polymer-based lenses. Most of the ionic electroactive polymer-based tunable lenses are fabricated with ionic polymer-metal composite. So, the ionic electroactive polymer-based tunable lenses can be operated under low electric voltage. But small force, slow recovery time and environmental limitation for operation has been pointed to the disadvantage of the lenses. The non-ionic electroactive polymer-based tunable lenses are classified again into two categories: dielectric polymer-based tunable lenses and polyvinylchloride gel-based tunable lenses. The advantage of the dielectric polymer-based tunable lenses is fast response to electric stimuli. But the essential flexible electrodes degrade performance of the lens. Polyvinylchloride gel-based tunable lens has reported impressive performance without flexible electrodes.

• Current Applied Physics
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• 제18권12호
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• pp.1546-1552
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• 2018

The polymer nanocomposite as a gate dielectric film was prepared via sol-gel method. The formation of crosslinked structure among nanofillers and polymer matrix was proved by Fourier transform infrared spectroscopy (FT-IR). Differential thermal analysis (DTA) results showed significant increase in the thermal stability of the nanocomposite with respect to that of pure polymer. The nanocomposite films deposited on the p- and n-type Si substrates formed very smooth surface with rms roughness of 0.045 and 0.058 nm respectively. Deconvoluted $Si_{2s}$ spectra revealed the domination of the Si-OH hydrogen bonds and Si-O-Si covalence bonds in the structure of the nanocomposite film deposited on the p- and n-type Si semiconductor layers respectively. The fabricated n-channel field-effect-transistor (FET) showed the low threshold voltage and leakage currents because of the stronger connection between the nanocomposite and n-type Si substrate. Whereas, dominated hydroxyl groups in the nanocomposite dielectric film deposited on the p-type Si substrate increased trap states in the interface, led to the drop of FET operation.

• 한국초전도ㆍ저온공학회논문지
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• 제25권2호
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• pp.19-24
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• 2023

Recently, interest in renewable energy such as solar and wind power has increased as an alternative to fossil fuels. Renewable energy sources such as large wind farms require long-distance power transmission because they are located inland or offshore, far from the city where power is required. High-Temperature Superconducting (HTS) power cables have more than 5 times the transmission capacity and less than one-tenth the transmission loss compared to the existing cables of the same size, enabling large-capacity transmission at low voltage. For commercialization of HTS power cables, unmanned operation and long-distance cooling technology of several kilometers is essential, and pressure drop characteristic is important. The cryostat's spiral corrugation tube is easier to bend, but unlike the round tube, the pressure drop cannot be calculated using the Moody chart. In addition, it is more difficult to predict the pressure drop characteristics due to the irregular surface roughness of the binder wound around the cable core. In this paper, a CFD model of a spiral corrugation tube with a core was designed by referring to the water experiments from previous studies. In the four cases geometry, when the surface roughness of the core was 10mm, most errors were 15% and the maximum errors were 23%. These results will be used as a reference for the design of long-distance HTS power cables.

• 전자공학회논문지SC
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• 제45권2호
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• pp.37-44
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• 2008

본 논문에서는 고속 링 발진기를 이용한 WLAN용 5.8 GHz PLL을 제안하였다. 제안한 PLL에 사용된 링 발진기는 부 스큐 지연방식을 이용하여 차동 구조로 설계되었다. 따라서 Power-Supply-Injected Noise에 둔감하며, 1/f Noise를 감소시키기 위하여 Tail Current Source를 사용하지 않았다. 제안한 링 발진기는 $0{\sim}1.8V$의 컨트롤 전압에 걸쳐 $5.13{\sim}7.04GHz$의 발진주파수를 보였다. 본 논문에서 제안한 PLL 회로는 0.18 um 1.8 V TSMC CMOS 라이브러리를 기본으로 하여 설계하였고 시뮬레이션을 통하여 성능을 검증하였다. 동작 주파수는 5.8 GHz이며, Locking Time은 2.5 us, 5.8 GHz에서의 소비 전력은 59.9mW로 측정되었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.128-133
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• 2008

Phase-change random access memory (PRAM) chip cell phase of amorphous state is rapidly changed to crystal state above 160 Celsius degree within several seconds during Infrared (IR) reflow. Thus, on-board programming method is considered for PRAM chip programming. We demonstrated the functional 512Mb PRAM with 90nm technology using several novel core circuits, such as metal-2 line based global row decoding scheme, PN-diode cells based BL discharge (BLDIS) scheme, and PMOS switch based column decoding scheme. The reverse-state standby current of each PRAM cell is near 10 pA range. The total leak current of 512Mb PRAM chip in standby mode on discharging state can be more than 5 mA. Thus in the proposed BLDIS control, all bitlines (BLs) are in floating state in standby mode, then in active mode, the activated BLs are discharged to low level in the early timing of the active period by the short pulse BLDIS control timing operation. In the conventional sense amplifier, the simultaneous switching activation timing operation invokes the large coupling noise between the VSAREF node and the inner amplification nodes of the sense amplifiers. The coupling noise at VSAREF degrades the sensing voltage margin of the conventional sense amplifier. The merit of the proposed sense amplifier is almost removing the coupling noise at VSAREF from sharing with other sense amplifiers.

• 한국정보통신학회논문지
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• 제21권1호
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• pp.1-7
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• 2017

본 논문에서는 ultra wide band(UWB) 대역(3.1-10.6 GHz)에서 동작하는 소형 계단형 개방 슬롯 안테나의 설계 방법에 대하여 연구하였다. 계단형 개방 슬롯 안테나의 접지면에 L형 슬롯을 추가하여 낮은 주파수에서 공진이 발생하도록 하여 소형화하고, 중간주파수 및 고주파수 대역에서 이득을 높이기 위해 스트립 도파기를 추가하였다. L형 슬롯의 길이, 도파기와 슬롯 안테나 사이의 간격 및 도파기의 길이에 따른 입력 반사계수와 이득 특성을 분석하였다. $30mm{\times}30mm$ 크기로 최적화된 안테나를 FR4 기판 상에 제작하고 특성을 실험한 결과 전압 정재파비(voltage standing wave ratio; VSWR)가 2 이하인 대역은 3.02-11.04 GHz으로 UWB 대역에서 동작함을 확인하였다.