• Title/Summary/Keyword: Low sinterability

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Low Temperature Sintering and Microwave Dielectric Properties of 0.85CaWO4-0.15LnNbO4 (Ln = La, Sm) Ceramics

  • Kim, Su-Jung;Kim, Eung-Soo
    • Korean Journal of Materials Research
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    • v.17 no.8
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    • pp.442-446
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    • 2007
  • Microwave dielectric properties of $0.85CaWO_4-0.15LnNbO_4$ (Ln = La, Sm) ceramics were investigated as a function of the sintering temperature and $Li_2WO_4$ content from 0.8 wt.% to 1.5 wt.%. A single phase with tetragonal scheelite structure was obtained at a given composition ranges. For the specimens with $Li_2WO_4$, the sintering temperature could be effectively reduced from $1150^{\circ}C$ to $900^{\circ}C$ due to the enhancement of sinterability. Dielectric constant (K) of the specimens with $LaNbO_4$ and $SmNbO_4$ was increased with the increase of sintering temperature and/or $Li_2WO_4$ content. However, K of the specimens with $LaNbO_4$ was higher than that of $SmNbO_4$ due to the larger dielectric polarizability $(\alpha)$ of $LaNbO_4$ ($18.08{\AA}$) than that of $SmNbO_4$ ($16.75{\AA}$). With an increase of $Li_2WO_4$ content, Qf value of the specimens with $SmNbO_4$ was decreased, while that of the specimens with $LaNbO_4$ was increased. Temperature coefficient of resonant frequency (TCF) was increased with the increase of $Li_2WO_4$ content.

Microstructure and Piezoelectric Properties of Low Temperature Sintering PMW-PNN-PZT-BF Ceramics According to PNN Substitution (PNN 치환에 따른 PMW-PNN-PZT-BF 세라믹스의 미세구조와 압전 특성)

  • Sin, Sang-Hoon;Yoo, Ju-Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.90-94
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    • 2016
  • In this work, [$Pb(Mg_{1/2}W_{1/2})_{0.03}(Ni_{1/3}Nb_{2/3})_x(Zr_{0.5}Ti_{0.5})_{0.97-x}O_3-BiFeO_3$] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of $BiFeO_3$, $Li_2CO_3$, and $CaCO_3$ were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of $CaCO_3$, $Li_2CO_3$. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at $920^{\circ}C$ showed the optimum values of piezoelectric constant($d_{33}$), piezoelectric figure of merit($d_{33{\cdot}}g_{33}$), planar piezoelectric coupling coefficient($k_p$) and density : $d_{33}=566$ [pC/N], $g_{33}=29.28[10^{-3}mV/N]$, $d_{33{\cdot}}g_{33}=16.57[pm^2/N]$, $k_p=0.61$, density=7.82 [$g/cm^3$], suitable for duplex ultrasonic sensor application.

Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics ($1-xBiNbO_4-xZnNb_2O_6$ 세라믹스의 저온소결 및 유전특성)

  • Kim, Yun-Han;Yoon, Sang-Ok;Kim, Kwan-Soo;Lee, Joo-Sik;Kim, Kyung-Mi;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.260-260
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    • 2007
  • Low-temperature sintering and dielectric properties of the $1-xBiNbO_4-xZnNb_2O_6$ ceramics (x=0.3, 0.5, and 0.7) with 10 wt% zinc borosilicate (ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying this system to LTCC technology. The all composition addition of 10 wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. The the amount of $ZnNb_2O_6$ on $ZnNb_2O_6$ ceramics increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the higher $Q{\times}f$ value and sintering temperature of $ZnNb_2O_6$ than that of $ZnNb_2O_6$ ceramics. The increase of $ZnNb_2O_6$ content from 0.3 to 0.7 in the $1-xBiNbO_4-xZnNb_2O_6$ ceramics with 10 wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 30~20 in the dielectric constant (${\varepsilon}_r$), 3,500~4,500 GHz in the $Q{\times}f$ value.

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Low-temperature sintering and dielectric properties of the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ ceramics ((1-x)$BiNbO_4-(x)ZnNb_2O_6$ 세라믹스의 저온 소결 및 유전 특성)

  • Kim, Yun-Han;Yoon, Sang-Ok;Kim, Shin;Kim, Kwan-Soo;Kim, Kyung-Joo;Park, Jong-Guk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.284-284
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    • 2007
  • In this study, the microwave dielectric property variations of (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites (x=0.3, 0.5 and 0.7) with 10wt% zinc borosilicate(ZBS) glass was investigated as a function of the substitution of $ZnNb_2O_6$ with a view to applying thes system to LTCC technology. The all composition addition of 10wt% ZBS glass ensured a successful sintering below $900^{\circ}C$. In addition, a small amount of $Bi_2SiO_5$ as the secondary phase was observed in the all composition. The substitution of $ZnNb_2O_6$ on the $BiNbO_4$ composites increased the $Q{\times}f$ values, but it decreased the sinterability and dielectric constant due to the high sintering temperature and low dielectric constant of $ZnNb_2O_6\;than\;BiNbO_4$ ceramics. The increasing of $ZnNb_2O_6$ content from 0.3 to 0.7 in the (1-x)$BiNbO_4-(x)ZnNb_2O_6$ composites with 10wt% ZBS glass sintered at $900^{\circ}C$ demonstrated 28.1~15.6 in the dielectric constant$({\varepsilon}_r)$, 5,500~8,700GHz in the $Q{\times}f$ value.

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Synthesis and dielectric properties of the $ZnAl_2O_4$ ceramics for low-firing (저온소결용 $ZnAl_2O_4$ 세라믹스의 합성 및 유전 특성)

  • Kim, Kwan-Soo;Yoon, Sang-Ok;Kim, Shin;Kim, Nam-Hyup;Kim, Yun-Han;Shim, Sang-Heung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.279-279
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    • 2007
  • Synthesis and dielectric properties of glass-ceramic composites with zinc borosilicate glass(here after ZBS glass) were investigated as functions of $ZnAl_2O_4$ phase synthesis method, glass addition (50~60 vol%) and sintering temperature ($600{\sim}950^{\circ}C$ for 2 hrs). The 50 vol% ZBS glass-$Al_2O_3$ and 60 vol% ZBS glass-$ZnAl_2O_4$ ensured successful sintering below $900^{\circ}C$. But the composition of 100-x-y vol% ZBS glass-x vol% $Al_2O_3-y$ vol% ZnO exhibited poor sinterability below $900^{\circ}C$ and the swelling phenomenon occurred in this composite with the large amount of ZBS glass. The sintering behavior of Glass-ceramic composites was affected by the crystallization of $ZnAl_2O_4$ which was formed by the reaction between ZBS glass and $Al_2O_3$. Dielectric constant (${\varepsilon}_r$), $Q{\times}f$ value and temperature coefficient of resonant frequency (${\tau}_f$) of the composite with 50 and 60 vol% ZBS glass contents demonstrated $ZBS-Al_2O_3({\varepsilon}_r=5.7)$, $ZBS-ZnAl_2O_4({\varepsilon}_r=5.8)$ which is applicable to substrate requiring an low dielectric properties.

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Effects of Sintering Additives on the Thermal and Mechanical Properties of AlN by Pressureless Sintering (상압소결 질화알루미늄의 소결 첨가제 변화에 따른 열적 및 기계적 특성)

  • Hwang, Jin Uk;Mun, So Youn;Nam, Sang Yong;Dow, Hwan Soo
    • Journal of Powder Materials
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    • v.26 no.5
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    • pp.395-404
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    • 2019
  • Aluminum nitride (AlN) has excellent electrical insulation property, high thermal conductivity, and a low thermal expansion coefficient; therefore, it is widely used as a heat sink, heat-conductive filler, and heat dissipation substrate. However, it is well known that the AlN-based materials have disadvantages such as low sinterability and poor mechanical properties. In this study, the effects of addition of various amounts (1-6 wt.%) of sintering additives $Y_2O_3$ and $Sm_2O_3$ on the thermal and mechanical properties of AlN samples pressureless sintered at $1850^{\circ}C$ in an $N_2$ atmosphere for a holding time of 2 h are examined. All AlN samples exhibit relative densities of more than 97%. It showed that the higher thermal conductivity as the $Y_2O_3$ content increased than the $Sm_2O_3$ additive, whereas all AlN samples exhibited higher mechanical properties as $Sm_2O_3$ content increased. The formation of secondary phases by reaction of $Y_2O_3$, $Sm_2O_3$ with oxygen from AlN lattice influenced the thermal and mechanical properties of AlN samples due to the reaction of the oxygen contents in AlN lattice.

Effects of the Mixing Method and Sintering Temperature on the Characteristics of PZNN-PZT Piezoelectric Ceramic Materials (합성방법과 소결 온도가 PZNN-PZT 압전 세라믹스 소재특성에 미치는 영향)

  • Kim, So Won;Jeong, Yong Jeong;Lee, Hee Chul
    • Journal of Powder Materials
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    • v.25 no.6
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    • pp.487-493
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    • 2018
  • The impact of different mixing methods and sintering temperatures on the microstructure and piezoelectric properties of PZNN-PZT ceramics is investigated. To improve the sinterability and piezoelectric properties of these ceramics, the composition of $0.13Pb((Zn_{0.8}Ni_{0.2})_{1/3}Nb_{2/3})O_3-0.87Pb(Zr_{0.5}Ti_{0.5})O_3$ (PZNN-PZT) containing a Pb-based relaxor component is selected. Two methods are used to create the powder for the PZNN-PZT ceramics. The first involves blending all source powders at once, followed by calcination. The second involves the preferential creation of columbite as a precursor, by reacting NiO with $Nb_2O_5$ powder. Subsequently, PZNN-PZT powder can be prepared by mixing the columbite powder, PbO, and other components, followed by an additional calcination step. All the PZNN-PZT powder samples in this study show a nearly-pure perovskite phase. High-density PZNN-PZT ceramics can be fabricated using powders prepared by a two-step calcination process, with the addition of 0.3 wt% MnO2 at even relatively low sintering temperatures from $800^{\circ}C$ to $1000^{\circ}C$. The grain size of the ceramics at sintering temperatures above $900^{\circ}C$ is increased to approximately $3{\mu}m$. The optimized PZNN-PZT piezoelectric ceramics show a piezoelectric constant ($d_{33}$) of 360 pC/N, an electromechanical coupling factor ($k_p$) of 0.61, and a quality factor ($Q_m$) of 275.

Influence of Additives on Densification of Low-Temperature PZT Ceramics (저온소성용 PZT 세라믹스의 치밀화에 미치는 첨가제의 영향)

  • Park, Yong-Kap
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.8 no.5
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    • pp.995-999
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    • 2007
  • The lead zirconate titanate (PZT) powders were synthesized to make the piezoelectric ceramics in low temperature as low as $900^{\circ}C$. To investigate the influence of additives on sintering of PZT, two kinds of sintering aids were made as follows; $wB_2O_3-xBi_2O_3-zCuO$and LiBiO2-CuO. The sintering aid, $1{\sim}3$ wt.% $LiBiO_2-CuO$, was added into these PZT powders and the specimens were fired at temperature in the range of $800{\sim}1200^{\circ}C$. The highest density was shown in the specimen with 1 wt.% $LiBiO_2-CuO$ as additive at temperature of $900^{\circ}C$. The sintered specimen were analyzed by X-ray diffraction(XRD) and scanning electron microscopy (SEM) was utilized to observe the microstructure, especially the densified morphology of specimens. In the XRD pattern, the well-crystallized PZT phase could be obtained in consequence of firing at $900^{\circ}C$. The scanning electron microscopy(SEM) was utilized to observe the structure of specimens after firing at $900^{\circ}C$. The densified perovskite structure of $PbZrTiO_3$ could be obtained by sintering at temperature as low as $900^{\circ}C$. The high sinterability of PZT ceramics was attributed to the low formation temperature of the liquid phase of additives.

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Dielectric properties of low temperature firing glass reacted (Ba, Sr)$TiO_3$$ ceramic capacitors (저온소결용 (Ba, Sr)$TiO_3$-Glass계 세라믹스의 유전특성)

  • Gu, Ja-Won;Seol, Yong-Geon;Choe, Seung-Cheol
    • Korean Journal of Materials Research
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    • v.5 no.2
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    • pp.151-156
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    • 1995
  • Low temperature firing $(Ba, Sr)TiO_{3}$ dielectrics were successfully prepared with lead based glass and those electrical properties were investigated. Different amount of PbO content glass materials were added to dielectrics to investigate the sinterability and its dielectric properties. Also, various compositions of ceramic capacitors were prepared to applicate in multilayer ceramic capacitors. A large amount of experiment has been done with various Pb contented glasses and different sintering temperatures. The sintering temperature of $(Ba,Sr)TiO_{3}$can be reduced from $1350^{\circ}C$to as low as $1050^{\circ}C$ with 4wt% addition of $PbO-ZnO-B_{2}O_{2}$ glass materials. Its dielectric constant at room temperature was up to 8100 with low dielectric loss, 0.005. This ceramic capacitor showed fully fired microstructures with its grain size of 1-3$\mu \textrm{m}$. The sintered body which was sintered at $1150^{\circ}C$ for 2hr with 4wt% $PbO-ZnO-B_{2}O_{2}$ glass material addition satisfied the Z5U specification of the EIAS.

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Spark Plasma Sintering and Ultra-Precision Machining Characteristics of SiC

  • Son, Hyeon-Taek;Kim, Dae-Guen;Park, Soon-Sub;Lee, Jong-Hyeon
    • Korean Journal of Materials Research
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    • v.20 no.11
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    • pp.559-569
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    • 2010
  • The liquid-phase sintering method was used to prepare a glass lens forming core composed of SiC-$Al_2O_3-Y_2O_3$. Spark plasma sintering was used to obtain dense sintered bodies. The sintering characteristics of different SiC sources and compositions of additives were studied. Results revealed that, owing to its initial larger surface area, $\alpha$-SiC offers sinterability that is superior to that of $\beta$-SiC. A maximum density of $3.32\;g/cm^3$ (theoretical density [TD] of 99.7%) was obtained in $\alpha$-SiC-10 wt% ($6Al_2O_3-4Y_2O_3$) sintered at $1850^{\circ}C$ without high-energy ball milling. The maximum hardness and compression stress of the sintered body reached 2870 Hv and 1110 MPa, respectively. The optimum ultra-precision machining parameters were a grinding speed of 1243 m/min, work spindle rotation rate of 100 rpm, feed rate of 0.5 mm/min, and depth of cut of $0.2\;{\mu}m$. The surface roughnesses of the thus prepared final products were Ra = 4.3 nm and Rt = 55.3 nm for the aspheric lens forming core and Ra = 4.4 nm and Rt = 41.9 for the spherical lens forming core. These values were found to be sufficiently low, and the cores showed good compatibility between SiC and the diamond-like carbon (DLC) coating material. Thus, these glass lens forming cores have great potential for application in the lens industry.