• Title/Summary/Keyword: Large area lithography

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The Control and Motion Characteristics of 5 axis Vacuum Stage for Electron Beam Lithography (전자빔 가공기용 진공 5축 스테이지의 제어 및 운동특성)

  • 이찬홍;박천홍;이후상
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.890-893
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    • 2004
  • The ultra precision machining in industrial field are increased day by day. The diamond turning has been used generally, but now is faced with limitation of use, because of higher requirement of production field. The electron beam lithography is alternative in machining area as semiconductor production. For EB lithography, 5 axis vacuum stage is required to duplicate small and large patterns on wafer. The stage is composed of 2 rotational axis and 3 translational axis with 5 DC servo motors. The positioning repeatability and resolution of Z axis feed unit are 3.21$\mu$m and 0.5 $\mu$m/step enough to apply to lithography.

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TIR Holographic lithography using Surface Relief Hologram Mask (표면 부조 홀로그램 마스크를 이용한 내부전반사 홀로그래픽 노광기술)

  • Park, Woo-Jae;Lee, Joon-Sub;Song, Seok-Ho;Lee, Sung-Jin;Kim, Tae-Hyun
    • Korean Journal of Optics and Photonics
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    • v.20 no.3
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    • pp.175-181
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    • 2009
  • Holographic lithography is one of the potential technologies for next generation lithography which can print large areas (6") as well as very fine patterns ($0.35{\mu}m$). Usually, photolithography has been developed with two target purposes. One was for LCD applications which require large areas (over 6") and micro pattern (over $1.5{\mu}m$) exposure. The other was for semiconductor applications which require small areas (1.5") and nano pattern (under $0.2{\mu}m$) exposure. However, holographic lithography can print fine patterns from $0.35{\mu}m$ to $1.5{\mu}m$ keeping the exposure area inside 6". This is one of the great advantages in order to realize high speed fine pattern photolithography. How? It is because holographic lithography is taking holographic optics instead of projection optics. A hologram mask is the key component of holographic optics, which can perform the same function as projection optics. In this paper, Surface-Relief TIR Hologram Mask technology is introduced, and enables more robust hologram masks than those previously reported that were formed in photopolymer recording materials. We describe the important parameters in the fabrication process and their optimization, and we evaluate the patterns printed from the surface-relief TIR hologram masks.

Role of a PVA layer During lithography of SnS2 thin Films Grown by Atomic layer Deposition

  • Ham, Giyul;Shin, Seokyoon;Lee, Juhyun;Lee, Namgue;Jeon, Hyeongtag
    • Journal of the Semiconductor & Display Technology
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    • v.17 no.3
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    • pp.41-45
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    • 2018
  • Two-dimensional (2D) materials have been studied extensively due to their excellent physical, chemical, and electrical properties. Among them, we report the material and device characteristics of tin disulfide ($SnS_2$). To apply $SnS_2$ as a channel layer in a transistor, $SnS_2$ channels were formed by a stripping method and a transfer method. The limitation of this method is that it is difficult to produce uniform device characteristics over a large area. Therefore, we directly deposited $SnS_2$ by atomic layer deposition (ALD) and then performed lithography. This method was able to produce devices with repeatable characteristics over a large area. However, the $SnS_2$ film was damaged by the acetone used as a photoresist (PR) developer during the lithography process, with the electrical properties of mobility of $2.6{\times}10^{-4}cm^2/Vs$, S.S. of 58.1 V/decade, and on/off current ratio of $1.8{\times}10^2$. These results are not suitable for advanced electronic devices. In this study, we analyzed the effect of acetone on $SnS_2$ and studied the device process to prevent such damage. Using polyvinyl alcohol (PVA) as a passivation layer during the lithography process, the electrical characteristics of the $SnS_2$ transistor had $2.11{\times}10^{-3}cm^2/Vs$ of mobility, 11.3 V/decade of S.S, and $2.5{\times}10^3$ of the on/off current ratio, which were 10x improvements to the $SnS_2$ transistor fabricated by the conventional method.

Technology for Roll-based Nanoimprint Lithography Systems (롤 기반 나노임프린트 리소그래피 시스템 기술)

  • Lim, Hyungjun;Lee, Jaejong;Choi, Kee-Bong;Kim, Geehong;Lee, Sunghwi
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.12 no.5
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    • pp.1-8
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    • 2013
  • Roll-based, nanoimprint lithography (Roll-NIL) is one effective method to produce large-area nanopatterns continuously. Systems and processes for Roll-NIL have been developed and studied for more than 15 years. Since the shapes of the stamp and the substrate for Roll-NIL can be plates, films, and rolls, there exist many concepts to design and implement roll-NIL systems. Combinations and variations of contact-methods for variously shaped stamps and substrates are analyzed in this paper. The contact-area can be changed by using soft materials such as polydimethylsiloxane (PDMS) or silicone rubber. Ultraviolet (UV) sources appropriate for the roll-to-plate or roll-to-roll process are introduced. Finally, two roll-to-plate nanoimprint lithography systems are illustrated.

X-ray grayscale lithography for sub-micron lines with cross sectional hemisphere for Bio-MEMS application (엑스선 그레이 스케일 리소그래피를 활용한 반원형 단면의 서브 마이크로 선 패턴의 바이오멤스 플랫폼 응용)

  • Kim, Kanghyun;Kim, Jong Hyun;Nam, Hyoryung;Kim, Suhyeon;Lim, Geunbae
    • Journal of Sensor Science and Technology
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    • v.30 no.3
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    • pp.170-174
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    • 2021
  • As the rising attention to the medical and healthcare issue, Bio-MEMS (Micro electro mechanical systems) platform such as bio sensor, cell culture system, and microfluidics device has been studied extensively. Bio-MEMS platform mostly has high resolution structure made by biocompatible material such as polydimethylsiloxane (PDMS). In addition, three dimension structure has been applied to the bio-MEMS. Lithography can be used to fabricate complex structure by multiple process, however, non-rectangular cross section can be implemented by introducing optical apparatus to lithography technic. X-ray lithography can be used even for sub-micron scale. Here in, we demonstrated lines with round shape cross section using the tilted gold absorber which was deposited on the oblique structure as the X-ray mask. This structure was used as a mold for PDMS. Molded PDMS was applied to the cell culture platform. Moreover, molded PDMS was bonded to flat PDMS to utilize to the sub-micro channel. This work has potential to the large area bio-MEMS.

A NUMERICAL STUDY ON THERMAL DESIGN OF A LARGE-AREA HOT PLATE FOR THERMAL NANOIMPRINT LITHOGRAPHY (나노임프린트 장비용 대면적 열판 열설계를 위한 수치 연구)

  • Park, G.J.;Lee, J.J.;Kwak, H.S.
    • Journal of computational fluids engineering
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    • v.21 no.2
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    • pp.90-98
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    • 2016
  • A numerical study is conducted on thermal performance of a large-area hot plate specially designed as a heating and cooling tool for thermal nanoimprint lithography process. The hot plate has a dimension of $240mm{\times}240mm{\times}20mm$, in which a series of cartridge heaters and cooling holes are installed. The material is stainless steel selected for enduring the high molding pressure. A numerical model based on the ANSYS Fluent is employed to predict the thermal behavior of the hot plate both in heating and cooling phases. The PID thermal control of the device is modeled by adding user defined functions. The results of numerical computation demonstrate that the use of cartridge heaters provides sufficient heat-up performance and the active liquid cooling in the cooling holes provides the required cool-down performance. However, a crucial technical issue is raised that the proposed design poses a large temperature non-uniformity in the steady heating phase and in the transient cooling phase. As a remedy, a new hot plate in which heat pipes are installed in the cooling holes is considered. The numerical results show that the installation of heat pipes could enhance the temperature uniformity both in the heating and cooling phases.

Improvement of Extraction Efficiency of OLED by Nanosphere Lithography (나노스피어 리소그라피를 이용한 OLED 광추출 효율의 향상)

  • Han, Gwang-Min;Yeo, Jong-Bin;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.24 no.12
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    • pp.1002-1009
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    • 2011
  • The light extraction efficiency of top-emitting organic light-emitting diode (OLED) was improved by insertion of corrugation patterns between indium tin oxide and organic layers. The corrugation patterns was fabricated by nanosphere lithography, which could form a self-assembled particle monolayer over a large area. The electrical and optical properties for the OLED devices fabricated by vacuum evaporation, were investigated. We have demonstrated the enhancement of the power efficiency of corrugated OLED. As a result, the power efficiency of the corrugated OLED was found to be more than 42%.

UV nanoimprint lithography using a multi-dispensing method (다중 디스펜싱 방법에 의한 UV-나노임프린트 리소그래피)

  • 심영석;손현기;신영재;이응숙;정준호
    • Journal of Institute of Control, Robotics and Systems
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    • v.10 no.7
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    • pp.604-610
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    • 2004
  • Ultraviolet-nanoimprint lithography (UV-NIL) is a promising method for cost-effectively defining nanoscale structures at room temperature and low pressure. Since the resolution of transferred nanostructures depends strongly upon that of nanostamps, the nanostamp fabrication technology is a key technology to UV-NIL. In this paper, a $5\times5\times0.09$ in. quartz stamp whose critical dimension is 377 nm was fabricated using the etching process in which a Cr film was employed as a hard mask for transferring nanostructures onto the quartz plate. To effectively apply the fabricated 5-in. stamp to UV-NIL on a 4-in. Si wafer, we have proposed a new UV-NIL process using a multi-dispensing method as a way to supply resist on a wafer. Experiments have shown that the multi-dispensing method can enable UV-NIL using a large-area stamp.

Parametric Study for a Diffraction Optics Fabrication by Using a Direct Laser Lithographic System (회절광학소자 제작을 위한 레이저 직접 노광기의 공정실험)

  • Kim, Young-Gwang;Rhee, Hyug-Gyo;Ghim, Young-Sik;Lee, Yun-Woo
    • Journal of the Korean Society for Precision Engineering
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    • v.33 no.10
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    • pp.845-850
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    • 2016
  • A direct laser lithography system is widely used to fabricate various types of DOEs (Diffractive Optical Elements) including lenses made as CGH (Computer Generated Hologram). However, a parametric study that uniformly and precisely fabricates the diffractive patterns on a large area (up to $200mm{\times}200mm$) has not yet been reported. In this paper, four parameters (Focal Position Error, Intensity Variation of the Lithographic Beam, Patterning Speed, and Etching Time) were considered for stabilization of the direct laser lithography system, and the experimental results were presented.