Role of a PVA layer During lithography of SnS2 thin Films Grown by Atomic layer Deposition |
Ham, Giyul
(Department of Materials Science and Engineering, Hanyang University)
Shin, Seokyoon (Department of Materials Science and Engineering, Hanyang University) Lee, Juhyun (Department of Materials Science and Engineering, Hanyang University) Lee, Namgue (Department of Nanoscale Semiconductor Engineering, Hanyang University) Jeon, Hyeongtag (Department of Materials Science and Engineering, Hanyang University) |
1 | Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A, "Electri field effect in atomically thin carbon films", Sicence, 306, pp. 666-669, (2014). |
2 | Geim A K, "Graphene: status and prospects", Science, 324, pp. 1530-1534, (2009). DOI |
3 | Geim A K, Novoselov K S, "The rise of graphene", Nature Materials., 6, pp. 183-191, (2007). DOI |
4 | Han M Y, Ozyilmax B, Zahng Y, Kim Philip, "Energy band-gap engineering of graphene nanoribbons", Physical Review Letters, 98, pp. 206805, (2007). DOI |
5 | Nguyen V H, Mazzamuto F, Saint-Martin J, Bournel A, Dollfus P, "Graphene nanomesh-based devices exhibiting a strong negative differential conductance effect", Nanotechnology, 23, pp, 289502, (2012). DOI |
6 | Berrada S, Nguyen V H, Querlioz D, Saint-Martin J, Alorcon A, Chassat C, Bournel A, Dollfus P, "Graphene nanomesh transitor with high on/off ratio and good saturation behavior", Applied Physics Letters, 103, pp. 183509, (2013). DOI |
7 | Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A, "Single-layer transistors", Nat. Nanotechnology, 6, pp. 147-150, (2011). DOI |
8 | Ochinnikov D, Allain A, Huang Y, Dumcenoco D, Kis A, "Electrical transport properties of single-layer ", ACS Nano, 8, pp. 8174-8181, (2014). DOI |
9 | Pandy M, Vojvodic A, Thygesen K S, Jacobsen K W, "Two-demensional metal dicahlcogenides and oxides for hydrogen evolution: A computational screening approach", The Journal of Physical Chemistry Letters, 6, pp. 1577-85, (2015). DOI |
10 | Ataca C, Sahin H, Ciraci S, "Stabe, single-layer , transition-metal oxides and dichalcogenides in a honeycomb-like structure", The Journal of Physical Chemistry C, 116, pp. 8983-8999, (2012) DOI |
11 | Huang Y, Sutter E, Sadowsi J T, Cotlet M, Monti O L.A, Racke D A, Neupane M R, Wickramaratne D, Lake R K, Parkinson B A, Sutter P, "Tin disulfide-An emerging layered metal dichalcogenide semiconductor: Materials properties and device characteristics", ACS Nano, 8, 10743-10755, (2014). DOI |
12 | Song H S, Li S L, Gao L, Xu Y, Ueno K, Tang J, Cheng Y B, Tsukagoshi K, "High-performance top-gated monolayer SnS2 field effect tansistor and their integrated logic circuits", Nanoscale, 4, pp. 9666-9670, (2013). |
13 | De D, Manongdo J, See S, Zhang V, Guloy A, Peng H, "High on/off ratio field effect transistors based on exfoilated crystalline SnS2 nano-membranes", Nanotechnology, 24, 025202, (2013). DOI |
14 | Lee J, Lee J, Ham G, Shin S, Park J, Choi H, Lee S, Kim J, Sul O, Lee S, Jeon H, "Improved electrical properties of atomic layer deposited tin disulfide at low tempertature using layer", AIP Advances, 7, pp. 025311, (2017). DOI |
15 | Mead D G, Irwin J C, "Raman spectra of and ", Solid State Communications, 20, pp. 885-887, (1976). DOI |
16 | Sun Y, Cheng H, Gao S, Sun Z, Liu Q, Liu Q, Lei F, Yao T, He J, Wei S, Xie Y, "Freestanding tin disulfide single-layers realizing efficient visible-light water splitting", Angewandte Chemie International Edition, 51, pp. 8727-31, (2012) DOI |
17 | Giberti A, Gaiardo A, Fabbri B, Gherardi S, Guidi V, Malagu C, Bellutti P, Zonta G, Casotti D, Cruciani G, "Tin(IV) sulfide nanorods as a new gas sensing material", Sensors and Actuators B: Chemical, pp. 223 827-33, (2016). DOI |
18 | Ham G, Shin S, Park J, Lee J, Choi H, Lee S, Jeong H, "Enginerring the crystallinity of tin disulfide deposited at low tempertature", RSC Advances, 6, 54069-54075, (2016) DOI |