• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.130-133
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• 2004

The characterization of interdigitated capacitors was investigated. The test structures are manufactured by low temperature co-fired ceramic(LTCC) process and their s-parameters were measured. The optimized equivalent circuit models for test structures were obtained using the partial element equivalent circuit(PEEC) method. Predictive modeling was performed on different test structures using optimized parameters to verify the circuit models. From this result, the manufacturability on the process can be improved through the predictive modeling for the characteristics of interdigitated capacitors.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.4
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• pp.229-237
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• 2011

In this paper, a 60 GHz LTCC SiP with low-power CMOS OOK modulator and demodulator is presented. The 60 GHz modulator is designed in a 90-nm CMOS process. The modulator uses a current reuse technique and only consumes 14.4-mW of DC power in the on-state. The measured data rate is up to 2 Gb/s. The 60 GHz OOK demodulator is designed in a 130nm CMOS process. The demodulator consists of a gain boosting detector and a baseband amplifier, and it recovers up to 5 Gb/s while consuming low DC power of 14.7 mW. The fabricated 60 GHz modulator and demodulator are fully integrated in an LTCC SiP with 1 by 2 patch antenna. With the LTCC SiP, 648 Mb/s wireless video transmission was successfully demonstrated at wireless distance of 20-cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.357-358
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• 2005

Compact power amplifier modules (PAM) for WCDMA/KPCS and GSM/WCDMA dual-band applications based on multilayer low temperature co-fired ceramic (LTCC) substrates are presented in this paper. The proposed modules are composed of an InGaP/GaAs HBT PAs on top of the LTCC substrates and passive components such as RF chokes and capacitors which are embedded in the substrates. The overall size of the modules is less than 6mm $\times$ 6mm $\times$ 0.8mm. The measured result shows that the PAM delivers a power of 28 dBm with a power added efficiency (PAE) of more than 30 % at KPCS band. The adjacent-channel power ratio (ACPR) at 1.25-MHz and 2.25-MHz offset is -44dBc/30kHz and -60dBc/30kHz, respectively, at 28-dBm output power. Also, the PAM for WCDMA band exhibits an output power of 27 dBm and 32-dB gain at 1.95 GHz with a 3.4-V supply. The adjacent-channel leakage ratio (ACLR) at 5-MHz and 10-MHz offset is -37.5dBc/3.84MHz and -48dBc/3.84MHz, respectively. The measured result of the GSM PAM shows an output power of 33.4 dBm and a power gain of 30.4 dB at 900MHz with a 3.5V supply. The corresponding power added efficiency (PAE) is more than 52.6 %.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.297-302
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• 2011

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing $O_2$ mixing ratio. At about 25% $O_2$ mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than $600^{\circ}C$, the PZT thin films become a perovskite phase. At the annealing temperature of $700^{\circ}C$, perovskite PZT thin films with good quality structure was obtained.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.31-38
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• 2003

In the current electronic technology atmosphere, MEMS (Microelectromechanical System) technology is regarded as one of promising device manufacturing technologies to realize market-demanding device properties. In the packaging of MEMS devices, the packaged structure must maintain hermeticity to protect the devices from a hostile atmosphere during their operations. For such MEMS device vacuum packaging, we introduce the LTCC (Low temperature Cofired Ceramic) packaging technology, in which embedded passive components such as resistors, capacitors and inductors can be realized inside the package. The technology has also the advantages of the shortened length of inner and surface traces, reduced signal delay time due to the multilayer structure and cost reduction by more simplified packaging processes owing to the realization of embedded passives which in turn enhances the electrical performance and increases the reliability of the packages. In this paper, the leakage rate of the LTCC package having several interfaces was measured and the possibility of LTCC technology application to MEMS devices vacuum packaging was investigated and it was verified that improved hermetic sealing can be achieved for various model structures having different types of interfaces (leak rate: stacked via; $4.1{\pm}1.11{\times}10^{-12}$/ Torrl/sec, LTCC/AgPd/solder/Cu-tube; $3.4{\pm}0.33{\times}10^{-12}$/ Torrl/sec). In real application of the LTCC technology, the technology can be successfully applied to the vacuum packaging of the Infrared Sensor Array and the images of light-up lamp through the sensor way in LTCC package structure was presented.

• Journal of Advanced Navigation Technology
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• v.23 no.2
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• pp.172-178
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• 2019

This paper has designed, fabricated, and analyzed the passive devices realized using low temperature co-fired ceramic (LTCC) multi layer substrates by dividing into the shrinkage process and the non-shrinkage process. Using two types of ceramic materials with dielectric constant 7 or 40, we have fabricated the same shape of various elements in 2 different processes and compared the characteristics. For the substrate of dielctric constant 40, compared with the shrinkage process which has 17% shrink in the X and Y directions with 36% shrink in the Z direction, the non-shrinkage process has 43% shrink in the Z direction without shrink in the X and Y directions, so high dimensional accuracy and surface flatness can be obtained. The inductances and capacitances of the fabricated elements are estimated from measurement using empirical analysis equations of parameters and implemented as a design library. Depending on the substrate and the process, the inductance and capacitance depending on the turn number of winding and unit area have been measured, and empirical polynomials are proposed to predict element values.

• 한국정보통신설비학회:학술대회논문집
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• 2002.08a
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• pp.17-20
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• 2002

본 논문에서는 세라믹 칩 안테나를 LTCC로 구현하여 다중 대역 특성을 얻는 방법을 제안하고 있다. 휴대용 단말기에 칩 안테나를 내장함으로 물리적 손상을 피하고 위치추적 시스템(GPS) 대역과 단말기 송수신용 대역, 즉 두 대역 이상 사용 가능하고 ${\varepsilon}_r=7.8$인 세라믹 칩 안테나를 LTCC(Low Temperature Co-fired Ceramic)공정을 이용하여 세라믹 칩 내부에 정합 회로를 구현하여 이중 대역 특성을 갖는 구조에 대해 논의하고 있다. 안테나의 전체 크기는 $16mm{\times}4mm{\times}2mm$ 이며 대역폭은 삽입손실 -10dB 기준 대략 1560MHz에서 2160MHz까지 약 600MHz정도이다. 측정은 접지면의 넓이가50mmx50mm이고 두께=0.7874mm, ${\varepsilon}_r=4.6$인 FR4 기판을 이용하여 측정한다.

• Journal of the Korean Ceramic Society
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• v.41 no.6
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• pp.444-449
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• 2004

The microwave dielectric properties of low temperature sintered BaO-Nd$_2$O$_3$-TiO$_2$ (here after BNT) with a Pb-based glass-ceramics were studied in order to investigate their applicability to Low Temperature Co-fired Ceramics (LTCC) for fabrication of multilayered Radio Frequency (RF) passive components module. The BNT ceramics, with 5∼30 wt% of PbO-TiO$_2$-A1$_2$O$_3$-SiO$_2$ based glass-ceramics, were sintered at 105$0^{\circ}C$, which is lower than 130$0^{\circ}C$, sintering temperature of pure BNT ceramics. With increasing the amount of the glass-ceramics, sintering rate of the ceramics become activated due to the softening of glass, resulting in low-temperature densification. BaO-Nd$_2$O$_3$-TiO$_2$ microwave ceramics with 20 wt% glass-ceramics exhibit sintered relative densities over 95% and dielectric constant of 72, quality factor of 1500, and temperature coefficient of frequency of +22 ppm/$^{\circ}C$. This enhanced dielectric properties are attributed to mainly the presence of crystalline phases PbTiO$_3$ within the Pb-based glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.

• Journal of Electrical Engineering and Technology
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• v.8 no.1
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• pp.168-175
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• 2013

This paper presents compact dual-band WLAN filter and filter module. They were developed by embedding all of the passive lumped elements into a LTCC substrate. In order to reduce the size/volume of the filter and avoid EM parasitic couplings between the passive elements, the proposed filter was designed using a 3rd order Chebyshev circuit topology and J-inverter transformation technology. The 3rd order Chebyshev bandpass filter was firstly designed for the band-selection of the 802.11b and was then transformed using finite transmission zeros technologies. Finally, the dual-band filter was realized by adding two notch resonators to the 802.11b filter circuit for the band-selection of the 802.11a/g. The maximum insertion losses in the lower and higher passbands were better than 2.0 and 1.3 dB with minimum return losses of 15 and 14 dB, respectively. Furthermore, the filter was integrated with a diplexer to clearly split the signals between 2 and 5 GHz. The maximum insertion and minimum return losses of the fabricated module were 2.2 and 14 dB at 2.4 - 2.5 GHz, and 1.6 and 19 dB at 5.15 - 5.85 GHz, respectively. The overall volume of the fabricated filter was $2.7{\times}2.3{\times}0.59mm^3$.