• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권3호
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• pp.99-104
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• 2002

lateral insulated gate bipolar transistors(LIGBTs) are extensively used in high voltage power IC application due to their low forward voltage drops. One of the main disadvantages of the LIGBT is its scow switching speed when compared to the LDMOSFET. And the LIGBT with reverse channel structure is lower current capability than the conventional LIGBT at the forward conduction mode. In this paper, the LIGBT which included p+ ring and p-channel gate is presented at the reverie channel structure. The presented LIGBT structure is proposed to suppress the latch up, efficiently and to improve the turn off time. It is shown to improve the current capability too. It is verified 2-D simulator, MEDICI. It is shown that the latch up current of new LIGBT is 10 times than that of the conventional LIGBT Additionally, it is shown that the turn off characteristics of the proposed LIGBT is i times than that of the conventional LIGBT. It is net presented the tail current of turn off characteristics at the proposed structure. And the presented LIGBT is not n+ buffer layer because it includes p channel gate and p+ ring.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권2호
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• pp.113-115
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• 2000

The gradual hole injection LIGBT (GI-LIGBT) which employs the dual gate and the p+ injector, was fabricated for eliminating a negative resistance regime and reducing a forward voltage drop in SA-LIGBT. The elimination of the negative resistance regime is successfully achieved by initiating the hole injection gradually. Furthermore, the experimental results show that the forward voltage drop of GI-LIGBT decreases by lV at the current density of 200 $A/cm^2$, when compared with that of the conventional SA-LIGBT. It is also found that the improvement in the on-state characteristics can be obtained without sacrificing the inherent fast switching characteristics of SA-LIGBT.

• Transactions on Electrical and Electronic Materials
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• 제1권4호
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• pp.16-19
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• 2000

Power transistors to be used in Power Integrated Circuits(PIC) are required to have low on resistance, fast switching speed, and high breakdown voltage. The lateral IGBTs(LIGBTs)are promising power devices for high voltage PIC applications, because of its superior device characteristics. In this paper, dual cathode LIGBT(DCIGBT) for high voltage is presented. We have verified the effectiveness of high blocking voltage in the new device by using two dimensional devices simulator. We have analyzed the forward blocking characteristics , the latch up performance and turn off characteristics of the proposed structure. Specially, we have focused forward blocking of LIGBT. The forward blocking voltage of conventional LIGBT and the proposed LIGBT are 120V and 165V, respectively. . The forward blocking characteristics of the proposed LIGBT is better than that of the conventional LIGBT. This forward blocking comparison exhibits a 1.5 times improvement in the proposed LIGBT.

• 전기전자학회논문지
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• 제15권2호
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• pp.164-170
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• 2011

본 논문에서는 기존 LIGBT의 컬렉터와 에미터 사이에 추가적으로 에미터를 형성한 이중-에미터 구조의 LIGBT를 제안한다. 이중-에미터 LIGBT 구조는 추가된 에미터에 의해 향상된 래치-업 전류밀도, 순방향 전압강하와 빠른 턴-온 시간을 갖는다. 시뮬레이션 결과 이중-에미터 LIGBT 구조는 기존 LIGBT 구조보다 향상된 순방향 전압강하(1.05V), 높은 래치-업 전류($2.5{\times}10^3\;A/{\mu}m^2$), 빠른 턴-온 시간(7.4us)을 가짐을 확인 한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.81-83
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• 2001

새로이 제안한 이중 애노드 LIGBT(Dual Anode LIGBT)는 빠른 스위칭을 위한 기존의 단락 애노드 구조를 캐소드의 양쪽에 위치시킴으로써 단락 애노드 구조가 갖는 부성저항영역을 효과적으로 제거했다. 뿐만 아니라 순방향전압강하 또한 기존의 분리된 단락 애노드 LIGBT (Seperate Shorted Anode LIGBT)에 비해 30%의 개선 효과를 갖는다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제48권3호
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• pp.161-166
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• 1999

We investigate the device characteristics of the separated shorted-anode LIGBT (SSA-LIGBT), which suppresses effectively the negative differential resistance regime, by 2-dimensional numerical simulation. The SSA-LIGBT increases the pinch resistance by employing the highly resistive n-drift region as an electron conduction path instead of the lowly resistive n buffer region of the conventional SA-LIGBT. The negative differential resistance regime of the SSA-LIGBT is significantly suppressed as compared with that of the conventional SA-LIGBT. The SSA-LIGBT shows the lower forward voltage drop than that of the conventional SA-LIGBT.

• 전기전자학회논문지
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• 제25권2호
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• pp.371-375
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• 2021

본 논문에서는 고전압과 고온에서 사용할 수 있는 SiC 기반의 LIGBT 구조를 제시한다. 낮은 전류 특성을 향상시키기 위해 Gate를 중심으로 대칭되는 Dual-Emitter가 삽입된 것이 특징이다. 제안된 소자의 특성 검증을 위하여 Sentaurus TCAD simulation을 이용하여 시뮬레이션을 진행하였고 일반적인 LIGBT와 비교 연구를 진행하였다. 뿐만 아니라, 소수캐리어에 의한 전기적 특성을 검증하기 위해 N-drift 영역의 길이에 대하여 변수를 지정하여 Split을 진행하였다. 시뮬레이션 분석 결과, 제안된 Dual-Emitter 구조는 기존의 LIGBT보다 동일한 전압에서 높은 전류가 흐르는 것을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.283-285
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• 2001

In this paper, a new lateral insulated gate bipolar transistor (LIGBT) is proposed to improve the latch-up performance without current path underneath the n+ cathode region. The improvement of latch-up performance is verified using the two-dimensional simulator MEDICI and the simulation results on the latch-up current density are 3.12${\times}$10$\^$-4/ A/$\mu\textrm{m}$ for the proposed LIGBT and 0.94${\times}$10$\^$-4/ A/$\mu\textrm{m}$ for the conventional LIGBT. The proposed SOI LIGBT exhibits 3 times larger latch-up capability than the conventional SOI LIGBT.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.196-198
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• 2002

A trench shorted anode LIGBT (TSA-LIGBT) which decreases the device area and the forward voltage drop has been proposed and verified by 2D device simulations. The trench located in the shorted anode would form the shorted anode. The simulation results show that TSA-LIGBT decrease the device area by about 20% and the forward voltage drop by over 75% compared with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has been eliminated successfully in the TSA-LIGBT.

• Transactions on Electrical and Electronic Materials
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• 제2권4호
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• pp.30-32
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• 2001

In this paper, a new silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed to improve the latch-up performance without current path underneath the n$^{+}$ cathode region. The improvement of latch-up performance is verified using the two- dimensional simulator MEDICI and the simulation results on the latch-up current density are 4468 A/cm2 for the proposed LIGBT and 1343 A/$\textrm{cm}^2$ for the conventional LIGBT. The proposed SOI LIGBT exhibits 3 times larger latch-up capability than the conventional SOI LIGBT.T.