Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A New SOI LIGBT Structure with Improved Latch-Up Performance

  • Sung, Woong-Je (Department of Electrical Engineering, Korea University) ;
  • Lee, Yong-Il (Department of Electrical Engineering, Korea University) ;
  • Park, Woo-Beom (Department of Electrical Engineering, Korea University) ;
  • Sung, Man-Young (Department of Electrical Engineering, Korea University)
  • Published : 2001.12.01
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Abstract

In this paper, a new silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed to improve the latch-up performance without current path underneath the n$^{+}$ cathode region. The improvement of latch-up performance is verified using the two- dimensional simulator MEDICI and the simulation results on the latch-up current density are 4468 A/cm2 for the proposed LIGBT and 1343 A/$\textrm{cm}^2$ for the conventional LIGBT. The proposed SOI LIGBT exhibits 3 times larger latch-up capability than the conventional SOI LIGBT.T.

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