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Trench Shorted Anode LIGBT on 501 Substrates  

Choe, Seung-Pil (서울대학 전기공학부 석사졸업)
Ha, Min-U (서울대학 전기공학부)
Han, Min-Gu (서울대학 전기공학부)
Choe, Yeon-Ik (아주대학 전자공학부)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.5, 2002 , pp. 196-198 More about this Journal
Abstract
A trench shorted anode LIGBT (TSA-LIGBT) which decreases the device area and the forward voltage drop has been proposed and verified by 2D device simulations. The trench located in the shorted anode would form the shorted anode. The simulation results show that TSA-LIGBT decrease the device area by about 20% and the forward voltage drop by over 75% compared with the conventional ones. Also the troublesome negative differential resistance (NDR) regime has been eliminated successfully in the TSA-LIGBT.
Keywords
SA-LIGBT; NBR regime; TSA-LIG;
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  • Reference
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