• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.5
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• pp.364-367
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• 2010

The dual ion-implantation trench edge termination techniques were investigated and optimized using a two-dimensional device simulator. By trenching the field ring site which would be dual implanted, a better blocking capability can be obtained. The results show that the p-n junction with dual implanted junction field-ring can accomplish nearly 20% increase of breakdown voltage in comparison with the conventional trench field-rings. The fabrication is relatively difficult. But the trench etched field ring with dual ion-implantation is surpassed for breakdown voltage and consume same area and extensive device simulations as well as qualitative analysis confirm these conclusions.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1128-1129
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• 2015

4H-SiC는 차세대 전력용 반도체로서 고전압, 고전류, 고온 동작에 적합하여 각광을 받고 있다. 전력용 반도체의 항복전압 개선하기 위하여 활성 (active) 영역의 주위에 설계하는 접합마감 (junction termination) 영역의 설계가 필수적이다. P+ 이온주입 및 활성화가 어려운 SiC 특성상 $5{\mu}m$보다 깊은 P+ 접합을 구현하기 어려운 특성상 기존 P+ FLR의 접합마감 소자는 항복전압을 개선하기 어렵다. 접합마감 소자의 항복전압을 효과적으로 증가시키기 위하여 트렌치를 설계하였다. 기존 접합마감 소자의 길이와 항복은 $7{\mu}m$와 473.0 V이지만, 제안된 접합마감 소자의 길이와 항복전압은 $5{\mu}m$와 993.4 V로 우수하였다.

• BMB Reports
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• v.56 no.12
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• pp.625-632
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• 2023

Nonsense-mediated mRNA decay (NMD) is both a quality control mechanism and a gene regulation pathway. It has been studied for more than 30 years, with an accumulation of many mechanistic details that have often led to debate and hence to different models of NMD activation, particularly in higher eukaryotes. Two models seem to be opposed, since the first requires intervention of the exon junction complex (EJC) to recruit NMD factors downstream of the premature termination codon (PTC), whereas the second involves an EJC-independent mechanism in which NMD factors concentrate in the 3'UTR to initiate NMD in the presence of a PTC. In this review we describe both models, giving recent molecular details and providing experimental arguments supporting one or the other model. In the end it is certainly possible to imagine that these two mechanisms co-exist, rather than viewing them as mutually exclusive.

• Congress of the korean instutite of fire investigation
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• 2010.12a
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• pp.63-79
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• 2010

It is found to the arc trace on the junction termination of 345kV cable. According to the analysis of the cable material is judged to be good. Manufacturing and design problems are not considered. In construction defects, it was estimated to the low level of insulation oil. In the majority of the arc trace appeared XLPE is found. However, there is no Soots mark, yellow band has not been confirmed, not associated with a radial arc of the spider leg is not evidence. In other opinions, void, contamination or jut are not found on the inside of XLPE. Thus, by the attachment of the impurities in surface of XLPE insulation is judged to the breakdown.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.3
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• pp.165-169
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.210-216
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• 2010

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.713-719
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• 2013

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed $6,580{\mu}m{\times}5,680{\mu}m$ of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.34-39
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• 2006

In high-voltage devices such as thyristor, beveling is mostly used junction termination method to reduce the surface electric field far below the bulk electric field and to expand the depletion region thus that breakdown occurs in the bulk of the device rather than at the surface. However, coating material used to protect the surface of the device contain so many charges which affect the electrical characteristics of the device. And device reliability is also affected by this charge. Therefore, it is needed to analyze the effect of surface charge on electrical characteristics of the device. In this paper, we analyzed the breakdown voltage and leakage current characteristics of the thyristor as a function of the amount of surface charge density. Two dimensional process simulator ATHENA and two-dimensional device simulator ATLAS is used to analyze the surface charge effects.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• Journal of Plant Biotechnology
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• v.35 no.2
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• pp.101-108
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• 2008

The Agrobacterium-mediated transformation has been successfully used method to introduce foreign genes into some monocotyledonous as well as a large number of dicotyledonous plants genome, We developed transgenic Chinese cabbage plants with insect-resistance gene, modified CryIAc, by Agrobacterium-transformation and confirmed transgene copy number by Southern blot analysis. We confirmed that twenty-nine out of 46 transgenic Chinese cabbage plants have single copy of CryIAc. To obtain the sequences information on the transferred DNA (T-DNA) integration into plant genome, we analyzed left border (LB) flanking sequences by genome walking (GW) PCR method. Out of 46 transgenic Chinese cabbage plants examined, 37 carried the vector backbone sequences. This result indicates that the transfer of the vector backbone from the binary vectors resulted mainly from inefficient termination of LB site. Analysis of T-DNA LB flanking region of 9 transgenic Chinese cabbage plants without vector backbone revealed that all LB ends were not conserved and nucleotides up to 36bp from the LB cleavage site were deleted.