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http://dx.doi.org/10.3740/MRSK.2010.20.4.210

Effect of Cleaning Processes of Silicon Wafer on Surface Passivation and a-Si:H/c-Si Hetero-Junction Solar Cell Performances  

Song, Jun-Yong (Photovoltaic Research Center, Korea Institute of Energy Research)
Jeong, Dae-Young (Photovoltaic Research Center, Korea Institute of Energy Research)
Kim, Chan-Seok (Photovoltaic Research Center, Korea Institute of Energy Research)
Park, Sang-Hyun (Photovoltaic Research Center, Korea Institute of Energy Research)
Cho, Jun-Sik (Photovoltaic Research Center, Korea Institute of Energy Research)
Song, Jin-Soo (Photovoltaic Research Center, Korea Institute of Energy Research)
Wang, Jin-Suk (Department of Electronic, Chungnam National University)
Lee, Jeong-Chul (Photovoltaic Research Center, Korea Institute of Energy Research)
Publication Information
Korean Journal of Materials Research / v.20, no.4, 2010 , pp. 210-216 More about this Journal
Abstract
This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of $100{\mu}sec$ after H-termination and above $600{\mu}sec$ after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of $37.31\;mA/cm^2$ and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-$V_{oc}$ with an elimination of series resistance.
Keywords
solar cells; heterojunction; a-Si:H; H-termination; passivation;
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