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http://dx.doi.org/10.4313/JKEM.2010.23.5.364

The Research on Trench Etched Field Ring with Dual Ion-Implantation for Power Devices  

Yang, Sung-Min (The School of Electrical Engineering, Korea University)
Oh, Ju-Hyun (The School of Electrical Engineering, Korea University)
Bae, Young-Seok (The School of Electrical Engineering, Korea University)
Sung, Man-Young (The School of Electrical Engineering, Korea University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.23, no.5, 2010 , pp. 364-367 More about this Journal
Abstract
The dual ion-implantation trench edge termination techniques were investigated and optimized using a two-dimensional device simulator. By trenching the field ring site which would be dual implanted, a better blocking capability can be obtained. The results show that the p-n junction with dual implanted junction field-ring can accomplish nearly 20% increase of breakdown voltage in comparison with the conventional trench field-rings. The fabrication is relatively difficult. But the trench etched field ring with dual ion-implantation is surpassed for breakdown voltage and consume same area and extensive device simulations as well as qualitative analysis confirm these conclusions.
Keywords
Power device; Edge termination; Trench field ring; Dual ion-implantation;
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  • Reference
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