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http://dx.doi.org/10.4313/JKEM.2012.25.3.165

A Study on the Field Ring of High Voltage Characteristics Improve for the Power Semiconductor  

Nam, Tae-Jin (Department of Energy Semiconductor Engineering, Far East University)
Jung, Eun-Sik (Department of Electrical Engineering, Korea University)
Jung, Hun-Suk (Department of Energy Semiconductor Engineering, Far East University)
Kim, Sung-Jong (Department of Energy Semiconductor Engineering, Far East University)
Kang, Ey-Goo (Department of Energy Semiconductor Engineering, Far East University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.3, 2012 , pp. 165-169 More about this Journal
Abstract
Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. And cause of junction curvature effects, the breakdown voltage of the device edge and device unit cells was found to be lower than the 'ideal' breakdown voltage limited by the semi-infinite junction profile. In this paper, Propose the methods for field ring design by DOE (Design of Experimentation). So The field ring can be improve for breakdown voltage and optimization.
Keywords
Field ring; Power device; Breakdown voltage; Edge termination;
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Times Cited By KSCI : 2  (Citation Analysis)
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