• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.2
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• pp.29-36
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• 2000

The principle and design of two-stage CMOS operational amplifier with rail-to-rail input and class-AB output stage is presented. The rail-to-rail input stage shows almost constant transconductance independent of the common mode input voltage range in global transistor operation region. This new technique does not make use of accurate current-voltage relationship of MOS transistors. Hence it was achieved by using simple linear relationship of currents. The simulated transconductance variation using SPICE is less the 4.3%. The proposed global two-stage opamp can operate both in strong inversion and in weak inversion. Class AB output stage proposed also has a full output voltage swing and a well-defined quiescent current that does not depend on power supply voltage. Since feedback class- AB control is used, it is expected that this output stage can be operating in extremely low voltage. The variation of DC-gain and unity-gain frequency is each 4.2% and 12%, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.7
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• pp.1-9
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• 2011

Memristor is a portmanteau of "memory resistor". The resistance of memristor is changed depends on the history of electric charge that passed through the device and it is able to memorize the last resistance after turning off the power supply. This paper presents this device that has a high chance to be the next generation of commercial non-volatile memory and its behavior modeling using SPICE simulation. The memristor MOS content addressable memory (M_CAM) is also designed and simulated using the proposed behavioral model. The proposed M_CAM unit cell area and power consumption show an improvement around 40% and 96%, respectively, compare to the conventional SRAM based CAMs. The M_CAM layout is also implemented using 0.13${\mu}m$ mixed-signal CMOS process under 1.2 V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.38 no.2
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• pp.38-49
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• 2001

This paper presents a new voltage down converter(VDC) using charge and discharge current adjustment circuitry that provides high frequency application. This VDC consist of a common driving circuit and compensation circuits: 2 sensors and each driving transistors for controlling gate current of driving transistor. These sensors are operated as adaptive biasing method with high speed and low power consumption. This circuit is designed with a $0.62{\mu}m$ N well CMOS technology. In H-spice simulation results, internal voltage is bounded ( IV, +0.6V) in proposed circuitry when load current rapidly increases and decreases during Gns between 0 and $200m{\Lambda}$. And the recovery time of internal voltage is about 7ns and 10ns when load current increases and decreases respectively. That is fast better than common driving circuit. Total power consumption is about 1.2mW.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.12
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• pp.22-28
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• 2008

This paper designed a efficient 8-bit CMOS analog-to-digital converter(ADC) for an SOC(System On Chip) application. The architecture consists of two modified 4-bit full-flash ADCs, it has been designed using a more efficient architecture. This is to predict roughly the range in which input signal residers and can be placed in the proximity of input signal based on initial prediction. The prediction of input signal is made available by introducing a voltage estimator. For 4-bit resolution, the modified full-flash ADC need only 6 comparators. So a 8-bit ADC require only 12 comparators and 32 resistors. The speed of this ADC is almost similar to conventional full-flash ADC, but the die area consumption is much less due to reduce numbers of comparators and registors. This architecture uses even fewer comparator than half-flash ADC. The circuits which are implemented in this paper is simulated with LT SPICE tool of computer.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.26 no.12C
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• pp.255-260
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• 2001

This paper describes the design of the Register Controlled DLL(Delay-Locked Loop) that achieves fast locking and low Power consumption using a new locking algorithm. A fashion for a fast locking speed is that controls the two controller in sequence. The up/down signal due to clock skew between a internal and a external clock in phase detector, first adjusts a large phase difference in coarse controller and then adjusts a small phase difference in fine controller. A way for a low power consumption is that only operates one controller at once. Moreover the proposed DLL shows better jitter performance Because using the lock indicator circuit. The proposed DLL circuit is operated from 50MHz to 200MHz by SPICE simulation. The estimated power dissipation is 15mA at 200MHz in 3.3V operation. The locking time is within 7 cycle at all of operating frequency.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.1-7
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• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.

• The Journal of Society for e-Business Studies
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• v.18 no.4
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• pp.83-105
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• 2013

There are two ways to assess data quality : measurement of data itself and assessment of data quality management process. Recently maturity assessment of data quality management process is used to ensure and certify the data quality level of an organization. Following this trend, the paper presents the process reference model which is needed to assess data quality management process maturity. First, the overview of assessment model for data quality management process maturity is presented. Second, the process reference model that can be used to assess process maturity is proposed. The structure of process reference model and its detail processes are developed based on the process derivation approach, basic principles of data quality management and the basic concept of process reference model in SPICE. Furthermore, characteristics of the proposed model are described compared with ISO 8000-150 processes.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.4
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• pp.28-34
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• 2000

In this paper, a continuous-time filter for low voltage and high frequency applications using fully-balanced current integrators is presented. As the balanced structure of integrator circuits, the designed filter has improved noise characteristics and wide dynamic range since even-order harmonics are cancelled and the input signal range is doubled. Using complementary current mirrors, bias circuits are simplified and the cutoff frequency of filters can be controlled easily by a single DC bias current. As a design example, the 3rd-order lowpass Butterworth filter with a leapfrog realization is designed. The designed fully-balanced current-mode filter is simulated and examined by SPICE using 0.65${\mu}{\textrm}{m}$ CMOS n-well process parameters. The simulation results show 50MHz cutoff frequency, 69㏈ dynamic range with 1% total harmonic distortion(THD), and 4㎽ power dissipation with a 3V supply voltage.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.48 no.4
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• pp.80-85
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• 2011

A time-pickoff circuit used for time measurement suffers from a timing error due to the dependence of the generation time of a timing pulse on the size of the input signal, i.e., time walk. In this study, a time-pickoff method, which employs an automatic gain control (AGC) circuit, is proposed for reducing the timing error. The AGC circuit is added to the input of the comparator, and it renders the sizes of input signals of the comparator relatively uniform. The performance of the proposed time-pickoff method is analyzed using the SPICE simulation, and experiments are performed to confirm the analytical results. The measured time walk is reduced to 2.000 ns by 65% for input signals with a dynamic range of 20 dB as compared to a typical leading-edge discriminator.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.37-44
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• 2007

A low-voltage high-linear bipolar OTA and its application to IF bandpass filter for GSM cellular telephone are presented. The OTA consists of a low-voltage linear transconductor, a translinear current gain cell, and three current mirrors. The bandpass filter is composed of two cascaded identical second-order bandpass filters, which consist of a resistor, a capacitor, and a grounded simulated inductor realized with two OTA's and a grounded capacitor. SPICE simulations using an 8 GHz bipolar transistor-array parameter show that the OTA with a transconductance of 1 mS exhibits a linearity error of less than ${\pm}2%$ over an input voltage range of ${\pm}0.65\;V$ at supply voltages of ${\pm}2.0\;V$. Temperature coefficient of the transconductance is less than $-90ppm/^{\circ}C$. The bandpass filter has a center frequency of 85 MHz and Q-factor of 80. Temperature coefficient of the center frequency is less than $-182ppm/^{\circ}C$. The power dissipation of the filter is 128 mW.