• 한국공작기계학회:학술대회논문집
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• 한국공작기계학회 2004년도 춘계학술대회 논문집
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• pp.494-499
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• 2004

A ion source using inductively coupled plasma has been tested in order to test its feasibility as a high brightness ion source for focused ion beam. When operating the ion source with filter magentas in front of plasma electrode for a negative ion source, lower remittances are expected. Extracted beam remittances are measured with an Allison-type scanning device for various plasma parameters and extraction conditions. The normalized omittance has been measured to be around 0.2$\pi$mmmrad with beam currents of up to 0.55 ㎃. In particular, noting that multicusp magnets have a role in decreasing the remittance as well as increasing plasma discharge efficiency, transverse magnetic field has been confirmed to be a useful tool fur decreasing remittance via electron energy control.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2011년도 제37회 추계학술대회논문집
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• pp.493-496
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• 2011

본 논문은 이온빔 기술에 대하여 발표된 논문을 중심으로 조사하였다. 이온빔의 기술은 기질이나 가공물에서 표면을 깎아내는 기법과 이와 반대로 표면에 이온을 증착 개질 시키는 두 가지로 크게 대별할 수 있고 문헌상으로는 후자가 더욱 활발하다.

• 한국세라믹학회지
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• 제42권1호
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• pp.28-32
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• 2005

이중 이온빔 스퍼터링(Dual ion-Beam Sputtering, DIBS)과 단일 이온빔 스피터링(Single ion-Beam Sputtering, SIBS)을 사용하여 기판의 온도와 보조 이온빔 에너지 변화에 따라 $Ta_{2}O_{5}$ 박막의 광학적 특성과 박막에 존재하는 응력의 변화에 과해 관찰하였다. SIBS 방법에 의해 증착되어진 박막의 굴절률은 150^{circ}C$에서 최고 2.144를 나타내었으며, $150^{circ}C$ 이상에서는 감소하였다. DIBS 방법에 의해 증착된 732린 박막은 기판의 온도가 증가함에 따라 $200^{circ}C$에서 최고 2.117의 굴절률을 나타내었다. $100^{circ}C$ 미만의 저온 DIBS 증착은 박막에 존재하는 응력을 낮추었으나 100^{circ}C 이상의 고온 증착시에는 박막에 존재하는 응력이 켰다. 보조 이온빔 어시스트 한 경우, 보조 이온빔 에너지가 250V에서 350V로 증가함에 따라 증착된 T놀달 박막의 굴절률은 2.185로 증가하였으나, $350\~650V$인 구간에서는 굴절률이 감소하는 경향을 나타냈다. 또한, 보조 이온빔 에너지가 증가함으로써 박막에 존재하는 응력이 감소하여 650 V에서 0.1834 GPa를 나타내었다.

• Applied Microscopy
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• 제45권4호
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• pp.208-213
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• 2015

Nanomanipulators installed in focused ion beam (FIB), which is used in the lift-out of lamella when preparing transmission electron microscopy specimens, have recently been employed for electrical resistance measurements, tensile and compression tests, and in situ reactions. During the pick-up process of a single nanowire (NW), there are crucial problems such as Pt, C and Ga contaminations, damage by ion beam, and adhesion force by electrostatic attraction and residual solvent. On the other hand, many empirical techniques should be considered for successful pick-up process, because NWs have the diverse size, shape, and angle on the growth substrate. The most important one in the in-situ precedence, therefore, is to select the optimum pick-up process of a single NW. Here we provide the advanced methodologies when manipulating NWs for in-situ mechanical and electrical measurements in FIB.

• 방사선산업학회지
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• 제4권4호
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• pp.341-345
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• 2010

The surface functionalization of a fluoropolymer by ion beam-induced graft polymerization was described in this research. The surface of poly(tetrafluoroethylene) (PTFE) films were irradiated by a 150 keV $H^+$ ions, and 4-vinyl pyridine (4VP) as a functional monomer was then thermally graft polymerized on the irradiated surface. The surface properties of poly(4-vinyl pyridine) (P4VP)-grafted PTFE films were investigated in terms of grafting degree, wettability, chemical structure, and morphology. The results revealed that the surface of PTFE films was successfully functionalized by ion beam-induced graft polymerization of 4VP.

• 한국생산제조학회지
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• 제24권4호
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• pp.400-406
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• 2015

This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

• 한국의학물리학회지:의학물리
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• 제31권3호
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• pp.71-80
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• 2020

This paper provides a brief review of the advanced technologies for carbon ion radiotherapy (CIRT), with a focus on current developments. Compared to photon beam therapy, treatment using heavy ions, especially a carbon beam, has potential advantages due to its physical and biological properties. Carbon ion beams with high linear energy transfer demonstrate high relative biological effectiveness in cell killing, particularly at the Bragg peak. With these unique properties, CIRT allows for accurate targeting and dose escalation for tumors with better sparing of adjacent normal tissues. Recently, the available CIRT technologies included fast pencil beam scanning, superconducting rotating gantry, respiratory motion management, and accurate beam modeling for the treatment planning system. These techniques provide precise treatment, operational efficiency, and patient comfort. Currently, there are 12 CIRT facilities worldwide; with technological improvements, they continue to grow in number. Ongoing technological developments include the use of multiple ion beams, effective beam delivery, accurate biological modeling, and downsizing the facility.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.170-170
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• 2000

Synthetic polymers such as polyimide, polycarbonate, and poly(methyl methacrylate) are long chain molecules which consist of carbon, hydrogen, and heteroatom linked together chemically. Recently, polymer surface can be modified by using a high energy ion beam process. High energy ions are introduced into polymer structure with high velocity and provide a high degree of chemical bonding between molecular chains. In high energy beam process the modified polymers have the highly crosslinked three-dimensionally connected rigid network structure and they showed significant improvements in electrical conductivity, in hardness and in resistance to wear and chemicals. Polyimide films (Kapton, types HN) with thickness of 50~100${\mu}{\textrm}{m}$ were used for investigations. They were treated with two different surface modification techniques: Plasma Source Ion Implantation (PSII) and conventional Ion Implantation. Polyimide films were implanted with different ion species such as Ar+, N+, C+, He+, and O+ with dose from 1 x 1015 to 1 x 1017 ions/cm2. Ion energy was varied from 10keV to 60keV for PSII experiment. Polyimide samples were also implanted with 1 MeV hydrogen, oxygen, nitrogen ions with a dose of 1x1015ions/cm2. This work provides the possibility for inducing conductivity in polyimide films by ion beam bombardment in the keloelectronvolt to megaelectronvolt energy range. The electrical properties of implanted polyimide were determined by four-point probe measurement. Depending on ion energy, doses, and ion type, the surface resistivity of the film is reduced by several orders of magnitude. Ion bombarded layers were characterized by Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS), XPS, and SEM.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.109-109
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• 1999

Recently, low energy ion beam irradiation has been adopted for surface modification. Low energy ion beam irradiation has many advantages in polymer engineering such as weak damage, good adhesion, noticeably-enhanced wettability(less than 15 degree), good reproducibility and so on. In this experiment, chemical reactions between free radicals and environment gas species have been investigated using angle-resolved XPS and TRIM code. In the case of low ion beam energy (around 1 keV), energy loss in polymer is mainly originated from atomic collisions instead of electronic interference. Atomic collisions could generated displaced atoms and free radicals. Cold cathode-ion source equipped with 5cm convex grid was used in an O2 environment. Base and working pressure were 5$\times$10-6 and 2.3$\times$10-4 Torr. Flow rates of argon and oxygen were fixed at 1.2 and 8 sccm. target materials are polyethylene polyvinyidenefluoride and polytetrafluoroethylene.

• 한국공작기계학회논문집
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• 제16권2호
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.