Transactions of the Korean Society of Machine Tool Engineers (한국공작기계학회논문집)

The Korean Society of Manufacturing Technology Engineers (한국생산제조학회)
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The Parametric Influence on Focused Ion Beam Processing of Silicon

집속이온빔의 공정조건이 실리콘 가공에 미치는 영향

  • 김준현 (성균관대학교 기계공학부) ;
  • 송춘삼 (국민대학교 대학원) ;
  • 김종형 (서울산업대학교 기계설계자동화공학부) ;
  • 장동영 (서울산업대학교 산업정보시스템공학부) ;
  • 김주현 (국민대학교 기계자동차공학부)
  • Published : 2007.04.15
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Abstract

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

Keywords

References

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