• Title/Summary/Keyword: Ion beam size

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The Electrical Characteristics of Chromium Oxide Film Produced by Son Beam Sputter Deposition (이온선 스퍼터 증착법에 의하여 제조된 CrOx의 전기적 특성)

  • 조남제;이규용
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.518-523
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    • 2002
  • The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

The Parametric Influence on Focused Ion Beam Processing of Silicon (집속이온빔의 공정조건이 실리콘 가공에 미치는 영향)

  • Kim, Joon-Hyun;Song, Chun-Sam;Kim, Jong-Hyeong;Jang, Dong-Young;Kim, Joo-Hyun
    • Transactions of the Korean Society of Machine Tool Engineers
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    • v.16 no.2
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    • pp.70-77
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    • 2007
  • The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

A New Trend of In-situ Electron Microscopy with Ion and Electron Beam Nano-Fabrication

  • Furuya, Kazuo;Tanaka, Miyoko
    • Applied Microscopy
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    • v.36 no.spc1
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    • pp.25-33
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    • 2006
  • Nanofabrication with finely focused ion and electron beams is reviewed, and position and size controlled fabrication of nano-metals and -semiconductors is demonstrated. A focused ion beam (FIB) interface attached to a column of 200keV transmission electron microscope (TEM) was developed. Parallel lines and dots arrays were patterned on GaAs, Si and $SiO_2$ substrates with a 25keV $Ga^+-FIB$ of 200nm beam diameter at room temperature. FIB nanofabrication to semiconductor specimens caused amorphization and Ga injection. For the electron beam induced chemical vapor deposition (EBI-CVD), we have discovered that nano-metal dots are formed depending upon the beam diameter and the exposure time when decomposable gases such as $W(CO)_6$ were introduced at the beam irradiated areas. The diameter of the dots was reduced to less than 2.0nm with the UHV-FE-TEM, while those were limited to about 15nm in diameter with the FE-SEM. Self-standing 3D nanostructures were also successfully fabricated.

Development of a High Brightness Ion Beam Extraction System using Micro-size Aperture (마이크로 사이즈 인출구경을 이용한 고휘도 이온빔 인출 시스템 개발)

  • Kim Yoon-Jae;Park Dong-Hee;Jeong Hyeong-Seol;Hwang Yong-Seok
    • Proceedings of the Korean Society of Machine Tool Engineers Conference
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    • 2005.05a
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    • pp.19-23
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    • 2005
  • In order to develop a high brightness ion source using plasma, the ion beam extraction system with an aperture of $100{\mu}m$ in diameter has been designed and constructed. It is observed that over 500nA of He ion beam current can be extracted. With such an optimized condition, $\~10^3\;A/cm^2sr$ beam brightness can be measured by emittance scanner, which is believed to be a promising result for developing next generation FIB.

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Particle Beam Focusing Using Radiation Pressure (광압을 이용한 입자빔 집속)

  • Kim, Sang-Bok;Park, Hyung-Ho;Kim, Sang-Soo
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1505-1509
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    • 2004
  • A novel technique for fine particle beam focusing under the atmospheric pressure is introduced using a radiation pressure assisted aerodynamic lens. To introduce the radiation pressure in the aerodynamic focusing system, a 25 mm plano-convex lens having 2.5 mm hole at its center is used as an orifice. The particle beam width is measured for various laser power, particle size, and flow velocity. In addition, the effect of the laser characteristics on the beam focusing is evaluated comparing an Ar-Ion continuous wave laser and a pulsed Nd-YAG laser. For the pure aerodynamic focusing system, the particle beam width was decreased as increasing particle size and Reynolds number. For the particle diameter of 0.5 ${\mu}m$, the particle beam was broken due to the secondary flow at Reynolds number of 694. Using the Ar-Ion CW laser, the particle beam width becomes smaller than that of the pure aerodynamic focusing system about 16 %, 11.4 % and 9.6 % for PSL particle size of 2.5 ${\mu}m$, 1.0 ${\mu}m$, and 0.5 ${\mu}m$ respectively at the Reynolds number of 320. Particle beam width was minimized around the laser power of 0.2 W. However, as increasing the laser power higher than 0.4 W, the particle beam width was increased a little and it approached almost a constant value which is still smaller than that of the pure aerodynamic focusing system. The radiation pressure effect on the particle beam width is intensified as Reynolds number decreases or particle size increases relatively. On the other hand, using 30 Hz pulsed Nd-YAG laser, the effect of the radiation pressure on the particle beam width was not distinct unlike Ar-Ion CW laser.

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Synthesis of TiO2 nanoparticles induced by electron beam irradiation and their electrochemical performance as anode materials for Li-ion batteries

  • Ahn, Ja-Hwa;Eom, Ji-Yong;Kim, Jong-Huy;Kim, Hye Won;Lee, Byung Cheol;Kim, Sung-Soo
    • Journal of Electrochemical Science and Technology
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    • v.6 no.3
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    • pp.75-80
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    • 2015
  • We introduce a new synthesis method to prepare small TiO2 nanoparticles with a narrow particle size distribution, which is achieved by electron beam (E-beam) irradiation. The effects of E-beam irradiation on the synthesis of TiO2 nanoparticles and the electrochemical performance of TiO2 nanoparticles as alternative anode materials for Li-ion batteries are investigated. The TiO2 nanoparticles induced by E-beam irradiation present better cycling performance and rate capability than the TiO2 nanoparticles synthesized by normal hydrolysis reaction. The better electrochemical performance is attributed to small particle size and narrow particle size distribution, resulting in the large surface area that provides innumerable reaction sites and short diffusion length for Li+ through TiO2 nanoparticles.

The Influence of Parameters Controlling Beam Position On-Sample During Deposition Patterning Process with Focused Ion Beam (빔 위치 관련 제어인자가 집속이온빔 패턴 증착공정에 미치는 영향)

  • Kim, Joon-Hyun;Song, Chun-Sam;Kim, Youn-Jea
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.32 no.3
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    • pp.209-216
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    • 2008
  • The application of focused ion beam (FIB) depends on the optimal interaction of the operation parameters between operating parameters which control beam and samples on the stage during the FIB deposition process. This deposition process was investigated systematically in C precursor gas. Under the fine beam conditions (30kV, 40nm beam size, etc), the effect of considered process parameters - dwell time, beam overlap, incident beam angle to tilted surface, minimum frame time and pattern size were investigated from deposition results by the design of experiment. For the process analysis, influence of the parameters on FIB-CVD process was examined with respect to dimensions and constructed shapes of single and multi- patterns. Throughout the single patterning process, optimal conditions were selected. Multi-patterning deposition were presented to show the effect of on-stage parameters. The analysis have provided the sequent beam scan method and the aspect-ratio had the most significant influence for the multi-patterning deposition in the FIB processing. The bitmapped scan method was more efficient than the one-by-one scan type method for obtaining high aspect-ratio (Width/Height > 1) patterns.

A Novel Large Area Negative Sputter Ion Beam source and Its Application

  • Kim, Steven
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.73-73
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    • 1999
  • A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

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Effect of Incident Ion Beam Energy on Microstructure and Adhesion Behavior of TiN Thin Films (TiN 박막의 미세조직 및 밀착력에 미치는 입사이온빔 에너지의 효과)

  • Baeg, C.H.;Hong, J.W.;Wey, M.Y.
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.4
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    • pp.229-234
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    • 2005
  • Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.