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Effect of Incident Ion Beam Energy on Microstructure and Adhesion Behavior of TiN Thin Films  

Baeg, C.H. (Dep't. of Materials Eng., Chungbuk Nat'l Univ.)
Hong, J.W. (Dep't. of Materials Eng., Chungbuk Nat'l Univ.)
Wey, M.Y. (Dep't. of Materials Eng., Chungbuk Nat'l Univ.)
Publication Information
Journal of the Korean Society for Heat Treatment / v.18, no.4, 2005 , pp. 229-234 More about this Journal
Abstract
Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.
Keywords
Ion beam; Assist energy; TiN; Film orientation; Scratch test;
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  • Reference
1 G. K. Hubler, C. A. Carosella, E. P. Donovan, D. Vanvechten, R. H. Bassel, T. D. Andreadis, and P. Mueller, Nucl. Instrum. and Methods B46 (1990) 384
2 R. A. Kant, B. D. Sartwell, I.L.Singer and R. G. Vardiman, Nucl.Instrum. and Methods B7/8 (1993) 915
3 M. Satou, Y. Andoh, K. Ogata, Y. Suzuki, K. Matsuda and E Fujimoto, Jpn. J. Appl. Phys., 24 (1985), 656   DOI
4 W. Ensinger and B. Rauschenbach, Nucl. Instrum. and Methods, B80/81 (1993) 1409
5 T. Hirsch and P. Mayer, Surf. Coat. Tech., 36 (1988) p. 729   DOI   ScienceOn
6 H. E. Hintermann, Wear, 100 (1984) 381   DOI   ScienceOn
7 D. Dowson, Wear, 103 (1985) 189   DOI   ScienceOn
8 J. A. Thorton and D. W. Hoffmann, J. Vac. Sci. and Tech., (1985) 576
9 F. M. D'Heurle and J. M. E. Harper, Thin Solid Films, 171 (1989) 81   DOI   ScienceOn