Journal of the Korean Society for Heat Treatment (열처리공학회지)

The Korean Society for Heat Treatment (한국열처리공학회)
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Effect of Incident Ion Beam Energy on Microstructure and Adhesion Behavior of TiN Thin Films

TiN 박막의 미세조직 및 밀착력에 미치는 입사이온빔 에너지의 효과

  • Baeg, C.H. (Dep't. of Materials Eng., Chungbuk Nat'l Univ.) ;
  • Hong, J.W. (Dep't. of Materials Eng., Chungbuk Nat'l Univ.) ;
  • Wey, M.Y. (Dep't. of Materials Eng., Chungbuk Nat'l Univ.)
  • 백창현 (충북대학교 공과대학 재료공학과) ;
  • 홍주화 (충북대학교 공과대학 재료공학과) ;
  • 위명용 (충북대학교 공과대학 재료공학과)
  • Received : 2005.05.26
  • Accepted : 2005.07.12
  • Published : 2005.07.30
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Abstract

Effect of incident ion beam energy on microstructure and adhesion behavior of TiN thin films were studied. Without ion beam assist, TiN film showed (111) growth mode which was thought to have the lowest deformation energy. As the ion beam assist energy increased, TiN film growth mode was changed from (111) to (200) mode. On the Si(100) substrate the critical incident energy for growth mode change was 100 eV/atom, however the critical assist energy was 121 eV/atom on the STD61 substrate. Grain size of TiN films increased with the assist ion beam energy. Finally, adhesion strength of TiN films bombarded above the critical ion assist energy showed 4~5 times higher values than that with lower bombard ion energy.

Keywords

Acknowledgement

Supported by : 충북대학교

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