• Title/Summary/Keyword: Integrated Circuits

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Low Drop-Out (LDO) Voltage Regulator with Improved Power Supply Rejection

  • Jang, Ho-Joon;Roh, Yong-Seong;Moon, Young-Jin;Park, Jeong-Pyo;Yoo, Chang-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.3
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    • pp.313-319
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    • 2012
  • The power supply rejection (PSR) of low drop-out (LDO) voltage regulator is improved by employing an error amplifier (EA) which is configured so the power supply noise be cancelled at the output. The LDO regulator is implemented in a 0.13-${\mu}m$ standard CMOS technology. The external supply voltage level is 1.2-V and the output is 1.0-V while the load current can range from 0-mA to 50-mA. The power supply rejection is 46-dB, 49-dB, and 38-dB at DC, 2-MHz, and 10-MHz, respectively. The quiescent current consumption is 65-${\mu}A$.

Estimation of Transferred Power from a Noise Source to an IC with Forwarded Power Characteristics

  • Pu, Bo;Kim, Taeho;Kim, SungJun;Kim, Jong-Hyeon;Kim, SoYoung;Nah, Wansoo
    • Journal of electromagnetic engineering and science
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    • v.13 no.4
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    • pp.233-239
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    • 2013
  • This paper proposes an accurate approach for predicting transferred power from a noise source to integrated circuits based on the characteristics of the power transfer network. A power delivery trace on a package and a printed circuit board are designed to transmit power from an external source to integrated circuits. The power is demonstrated between an injection terminal on the edge of the printed circuit board and integrated circuits, and the power transfer function of the power distribution network is derived. A two-tier calibration is applied to the test, and scattering parameters of the network are measured for the calculation of the power transfer function. After testing to obtain the indispensable parameters, the real received and tolerable power of the integrated circuits can be easily achieved. Our proposed estimation method is an enhancement of the existing the International Electrotechnical Commission standard for precise prediction of the electromagnetic immunity of integrated circuits.

Modeling and Prediction of Electromagnetic Immunity for Integrated Circuits

  • Pu, Bo;Kim, Taeho;Kim, SungJun;Kim, SoYoung;Nah, Wansoo
    • Journal of electromagnetic engineering and science
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    • v.13 no.1
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    • pp.54-61
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    • 2013
  • An equivalent model has been developed to estimate the electromagnetic immunity for integrated circuits under a complex electromagnetic environment. The complete model is based on the characteristics of the equipment and physical configuration of the device under test (DUT) and describes the measurement setup as well as the target integrated circuits under test, the corresponding package, and a specially designed printed circuit board. The advantage of the proposed model is that it can be applied to a SPICE-like simulator and the immunity of the integrated circuits can be easily achieved without costly and time-consuming measurements. After simulation, measurements were performed to verify the accuracy of the equivalent model for immunity prediction. The improvement of measurement accuracy due to the added effect of a bi-directional coupler in the test setup is also addressed.

A Delta-Sigma Fractional-N Frequency Synthesizer for Quad-Band Multi-Standard Mobile Broadcasting Tuners in 0.18-μm CMOS

  • Shin, Jae-Wook;Kim, Jong-Sik;Kim, Seung-Soo;Shin, Hyun-Chol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.4
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    • pp.267-273
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    • 2007
  • A fractional-N frequency synthesizer supports quadruple bands and multiple standards for mobile broadcasting systems. A novel linearized coarse tuned VCO adopting a pseudo-exponential capacitor bank structure is proposed to cover the wide bandwidth of 65%. The proposed technique successfully reduces the variations of KVCO and per-code frequency step by 3.2 and 2.7 times, respectively. For the divider and prescaler circuits, TSPC (true single-phase clock) logic is extensively utilized for high speed operation, low power consumption, and small silicon area. Implemented in $0.18-{\mu}m$ CMOS, the PLL covers $154{\sim}303$ MHz (VHF-III), $462{\sim}911$ MHz (UHF), and $1441{\sim}1887$ MHz (L1, L2) with two VCO's while dissipating 23 mA from 1.8 V supply. The integrated phase noise is 0.598 and 0.812 degree for the integer-N and fractional-N modes, respectively, at 750 MHz output frequency. The in-band noise at 10 kHz offset is -96 dBc/Hz for the integer-N mode and degraded only by 3 dB for the fractional-N mode.

A Novel Zero-Crossing Compensation Scheme for Fixed Off-Time Controlled High Power Factor AC-DC LED Drivers

  • Chang, Changyuan;Sun, Hailong;Zhu, Wenwen;Chen, Yao;Wang, Chenhao
    • Journal of Power Electronics
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    • v.16 no.5
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    • pp.1661-1668
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    • 2016
  • A fixed off-time controlled high power factor ac-dc LED driver is proposed in this paper, which employs a novel zero-crossing-compensation (ZCC) circuit based on a fixed off-time controlled scheme. Due to the parasitic parameters of the system, the practical waveforms have a dead region. By detecting the zero-crossing boundary, the proposed ZCC circuit compensates the control signal VCOMP within the dead region, and is invalid above this region. With further optimization of the parameters KR and Kτ of the ZCC circuit, the dead zone can be eliminated and lower THD is achieved. Finally, the chip is implemented in HHNEC 0.5μm 5V/40V HVCMOS process, and a prototype circuit, delivering 7~12W of power to several 3-W LED loads, is tested under AC input voltage ranging from 85V to 265V. The test results indicate that the average total harmonic distortion (THD) of the entire system is approximately 10%, with a minimum of 5.5%, and that the power factor is above 0.955, with a maximum of 0.999.

Analysis and Design of a Separate Sampling Adaptive PID Algorithm for Digital DC-DC Converters

  • Chang, Changyuan;Zhao, Xin;Xu, Chunxue;Li, Yuanye;Wu, Cheng'en
    • Journal of Power Electronics
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    • v.16 no.6
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    • pp.2212-2220
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    • 2016
  • Based on the conventional PID algorithm and the adaptive PID (AD-PID) algorithm, a separate sampling adaptive PID (SSA-PID) algorithm is proposed to improve the transient response of digitally controlled DC-DC converters. The SSA-PID algorithm, which can be divided into an oversampled adaptive P (AD-P) control and an adaptive ID (AD-ID) control, adopts a higher sampling frequency for AD-P control and a conventional sampling frequency for AD-ID control. In addition, it can also adaptively adjust the PID parameters (i.e. $K_p$, $K_i$ and $K_d$) based on the system state. Simulation results show that the proposed algorithm has better line transient and load transient responses than the conventional PID and AD-PID algorithms. Compared with the conventional PID and AD-PID algorithms, the experimental results based on a FPGA indicate that the recovery time of the SSA-PID algorithm is reduced by 80% and 67% separately, and that overshoot is decreased by 33% and 12% for a 700mA load step. Moreover, the SSA-PID algorithm can achieve zero overshoot during startup.

Design of a High-Precision Constant Current AC-DC Converter with Inductance Compensation

  • Chang, Changyuan;Xu, Yang;Bian, Bin;Chen, Yao;Hu, Junjie
    • Journal of Power Electronics
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    • v.16 no.3
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    • pp.840-848
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    • 2016
  • A primary-side regulation AC-DC converter operating in the PFM (Pulse Frequency Modulation) mode with a high precision output current is designed, which applies a novel inductance compensation technique to improve the precision of the output current, which reduces the bad impact of the large tolerance of the transformer primary side inductance in the same batch. In this paper, the output current is regulated by the OSC charging current, which is controlled by a CC (constant current) controller. Meanwhile, for different primary inductors, the inductance compensation module adjusts the OSC charging current finely to improve the accuracy of the output current. The operation principle and design of the CC controller and the inductance compensation module are analyzed and illustrated herein. The control chip is implemented based on a TSMC 0.35μm 5V/40V BCD process, and a 12V/1.1A prototype has been built to verify the proposed control method. The deviation of the output current is within ±3% and the variation of the output current is less than 1% when the inductances of the primary windings vary by 10%.

A 40-W Flyback Converter with Dual-Operation Modes for Improved Light Load Efficiency

  • Kang, Jin-Gyu;Park, Jeongpyo;Gong, Jung-Chul;Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.4
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    • pp.493-500
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    • 2015
  • A flyback converter operates with either pulse width modulation (PWM) or pulse frequency modulation (PFM) control scheme depending on the load current. At light load condition, PFM control is employed to reduce the switching frequency and thereby minimize the switching power loss. For heavier load, PWM control is used to regulate the output voltage of the flyback converter. The flyback controller has been implemented in a $0.35{\mu}m$ BCDMOS process and applied to a 40-W flyback converter. The light-load power efficiency of the flyback converter is improved up to 5.7-% comparing with the one operating with a fixed switching frequency.

A 6-Gb/s Differential Voltage Mode Driver with Independent Control of Output Impedance and Pre-Emphasis Level

  • Bae, Chang-Hyun;Choi, Dong-Ho;Ahn, Keun-Seon;Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.5
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    • pp.423-429
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    • 2013
  • A 6-Gb/s differential voltage mode driver is presented whose output impedance and pre-emphasis level can be controlled independently. The voltage mode driver consists of five binary-weighted slices each of which has four sub-drivers. The output impedance is controlled by the number of enabled slices while the pre-emphasis level is determined by how many sub-drivers in the enabled slices are driven by post-cursor input. A prototype transmitter with a voltage-mode driver implemented in a 65-nm CMOS logic process consumes 34.8-mW from a 1.2-V power supply and its pre-emphasized output signal shows 165-mVpp,diff and 0.56-UI eye opening at the end of a cable with 10-dB loss at 3-GHz.

RE circuit simulation for high-power LDMOS modules

  • fujioka, Tooru;Matsunaga, Yoshikuni;Morikawa, Masatoshi;Yoshida, Isao
    • Proceedings of the IEEK Conference
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    • 2000.07b
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    • pp.1119-1122
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    • 2000
  • This paper describes on RF circuit simulation technique, especially on a RF modeling and a model extraction of a LDMOS(Lateral Diffused MOS) that has gate-width (Wg) dependence. Small-signal model parameters of the LDMOSs with various gate-widths extracted from S-parameter data are applied to make the relation between the RF performances and gate-width. It is proved that a source inductance (Ls) was not applicable to scaling rules. These extracted small-signal model parameters are also utilized to remove extrinsic elements in an extraction of a large-signal model (using HP Root MOSFET Model). Therefore, we can omit an additional measurement to extract extrinsic elements. When the large-signal model with Ls having the above gate-width dependence is applied to a high-power LDMOS module, the simulated performances (Output power, etc.) are in a good agreement with experimental results. It is proved that our extracted model and RF circuit simulation have a good accuracy.

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