• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.33-36
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• 2004

Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.1
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• pp.47-52
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• 2012

A power amplifier is one of important factors for basestation's efficiency and the researches for efficency enhancement focus Doherty amplifier structure with GaN power devices in these days. A memory effect of Doherty amplifier affect operation characteristics for linearity and efficiency. This paper reports on electrothermal nonlinearity modeling and compensation for GaN Doherty amplifier's distortion. Also this paper reports on the dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. We design distortion model for GaN Doherty amplifier and predistortion compensator for electrothermal memory effect from the proposed behavior model parameters. The simulations was evaluated by ADS Tools and GaN Doherty amplifier with 37dBm. The GaN Doherty amplifier with compensator enhanced about 16dB than without electrothemal memory effect compensator in 2-tone output spectrum.

• KEPCO Journal on Electric Power and Energy
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• v.5 no.1
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• pp.39-43
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• 2019

Hydrogen energy has positive effects as an alternative energy source to overcome the energy shortage issues. On the other hand, since stability is very important in use, sensor technology that enables accurate and rapid detection of hydrogen gas is highly required. In this study, hydrogen sensor was developed on AlGaN/GaN heterostructure platform using Pd catalyst where a recess structure was employed to improve the sensitivity. Temperature and bias voltage dependencies on sensitivity were carefully investigated using a hydrogen concentration of 4% that is the safety threshold concentration. Due to the excellent properties of AlGaN/GaN heterostructure in conjunction with the recess structure, a very high sensitivity of 56% was achieved with a fast response speed of 0.75 sec.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.322.2-322.2
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• 2014

Lighting emitting diodes of n-ZnO/MQW/p-GaN structure are fabricated and investigated. To realize this LED structure, n-ZnO/MQW/p-GaN are grown by MOCVD. At several bias voltages, blue-green light is emitted from the ZnO mesa edge. However, the emission is restricted near the mesa edge. It is seen that the hole current does not spread well. It is because conductivity of p-GaN is extremely small. The break down voltage of the device is small compared to conventional InGaN/GaN LEDs. It is seen that ZnO columnar grain boundaries act as leakage current paths and non-radiative recombination center.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.3
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• pp.106-111
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• 2001

The freestanding GaN substrates were grown by hydride vapor phase epitaxy (HVPE) on (0001) sapphire substrate and prepared by using laser induced lift-off. After a mechanical polishing on both Ga and N-surfaces of GaN films with 100$\mu\textrm{m}$ thick, their polarities have been investigated by using chemical etching in phosphoric acid solution, 3 dimensional surface profiler and Auger electron spectroscopy (AES). The composition of the GaN film measured by AES indicted that Ga and N terminated surfaces have the different N/Ga peak ratio of 0.74 and 0.97, respectively. Ga-face and N-face of GaN revealed quite different chemical properties: the polar surfaces corresponding to (0001) plane are resistant to a phosphoric acid etching whereas N-polar surfaces corresponding to(0001) are chemically active.

• Bulletin of the Korean Chemical Society
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• v.25 no.1
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• pp.51-54
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• 2004

Gallium nitride (GaN) powders were prepared by calcining a gallium(III) nitrate salt in flowing ammonia in the temperature ranging from 500 to 1050 $^{\circ}C$. The process of conversion of the salt to GaN was monitored by X-ray diffraction and $^{71}Ga$ MAS (magic-angle spinning) NMR spectroscopy. The salt decomposed to ${\gamma}-Ga_2O_3$ and then converted to GaN without ${\gamma}-{\beta}Ga_2O_3$ phase transition. It is most likely that the conversion of ${\gamma}-Ga_2O_3$ to GaN does not proceed through $Ga_2O$ but stepwise via amorphous gallium oxynitride ($GaO_xN_y$) as intermediates. The GaN nanowires and microcrystals were obtained by calcining the pellet containing a mixture of ${\gamma}-Ga_2O_3$ and carbon in flowing ammonia at 900 $^{\circ}C$ for 15 h. The growth of the nanowire might be explained by the vapor-solid (VS) mechanism in a confined reactor. Room-temperature photoluminescence spectra of as-synthesized GaN powders obtained showed the emission peak at 363 nm.

• Korean Journal of Materials Research
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• v.13 no.12
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• pp.769-774
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• 2003

In this paper, we report on the DC characteristics of the AlGaN/GaN HFETs using physical models on piezoelectric and thermal effects. Employing the models was found to be essential for a realistic prediction of the DC current-voltage characteristics of the AlGaN/GaN HFETs. Though use of the implementation of the physical models, peak drain current, transconductance, pinch-off voltage, and most importantly, the negative slope in the current were accurately predicted. The importance of the heat sink effect was demonstrated by the comparison of the DC characteristics of AlGaN/GaN HFETs fabricated from different substrates including sapphire, Si and SiC. Highest peak current was achieved from the device with SiC by an effective suppression of heat sink effect.

• Journal of IKEEE
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• v.23 no.1
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• pp.326-329
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• 2019

Gallium nitride(GaN) has been a superior candidate for the next generation power electronics. As GaN-on-Si substrate technology is mature, there has been new demand for monolithic integration of GaN technology with Si CMOS devices. In this work, (110)Si CMOS process was developed and the fabricated devices were evaluated in order to confirm the feasibility of utilizing domestic foundry facility for monolithic integration of Si CMOS and GaN power devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.3
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• pp.114-118
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• 2011

We report on the growth and characterization of nano and micro scale GaN structures selectively grown on the vertex of hexagonal GaN pyramids. $SiO_2$ near the vertex of hexagonal GaN pyramids was removed by optimized photolithgraphy process and followed by a selective growth of nano and micro scale GaN structures by metal organic vapor phase epitaxy (MOVPE). The pyramidal GaN nano and micro structures which have crystal facets of semi-polar {1-101} facets were formed only on the vertex of GaN pyramids and the size of the selectively grown nano and micro GaN structures was easily controlled by growth time. As a result of TEM measurement, Reduction of threading dislocation density was conformed by transmission electron microscopy (TEM) in the selectively grown nano and micro GaN structures. However, stacking faults were newly developed near the edge of $SiO_2$ film because of the roughness and nonuniformity in thickness of the $SiO_2$ film.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.201-206
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• 2005

In this work, we tried to improve the fabrication process in HVPE (Hydride Vapor Phase Epitaxy) system by using Si(111) substrate with pre-deposited Al layer. PL measurements was done for samples with and without pre-deposited Al on Si and it was also examined the dependence of the optical characteristic properties on AlN buffer thickness for GaN/AIN/Al/Si. A sample with thin Al nucleation layer on Si substrate reveals a better optical property than the other. And it suggests that the thickness for AlN buffer layer with thin Al nucleation layer on Si(111) substrate is most proper about $260{\AA}$ to grow GaN in HVPE system. The surface morphology of GaN clearly shows the hexagonal crystallization. The XRD pattern showed strong peak at GaN{0001} direction.