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Growth and characterization of amorphous GaN film using a pulsed-laser ablation  

Naoto Koshizaki (Nanoarchitectonics Research Center, AIST)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.14, no.1, 2004 , pp. 33-36 More about this Journal
Abstract
Amorphous GaN film was deposited using a laser ablation of the highly densified GaN target. Through the surface morphological and compositional analysis of films deposited under various laser energies and Ar gas pressures, the film deposited under the pressure of 10 Pa were found to be amorphous GaN with the smooth surface. In particular, the film at 200 mJ/pulse showed the enhanced crystallinity and stoichiometric composition, compared with those of the films at relatively lower laser energy. The strong band-gap emission at 2.8 eV was observed from amorphous GaN film in the room temperature photoluminescence spectra, showing the highest efficiency in the film at 200 mJ/pulse under 10 Pa.
Keywords
Amorphous GaN; Photoluminescence; Pulsed-laser ablation; Gas pressure; Laser energy;
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