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The Improvement of GaN Doherty Amplifier with Memory Effect Compensation  

Lee, Suk-Hui (Dankook University)
Cho, Gap-Je (Dankook University)
Bang, Sung-Il (Dankook University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea TC / v.49, no.1, 2012 , pp. 47-52 More about this Journal
Abstract
A power amplifier is one of important factors for basestation's efficiency and the researches for efficency enhancement focus Doherty amplifier structure with GaN power devices in these days. A memory effect of Doherty amplifier affect operation characteristics for linearity and efficiency. This paper reports on electrothermal nonlinearity modeling and compensation for GaN Doherty amplifier's distortion. Also this paper reports on the dynamic expression of the instantaneous junction temperature as a function of the instantaneous dissipated power. We design distortion model for GaN Doherty amplifier and predistortion compensator for electrothermal memory effect from the proposed behavior model parameters. The simulations was evaluated by ADS Tools and GaN Doherty amplifier with 37dBm. The GaN Doherty amplifier with compensator enhanced about 16dB than without electrothemal memory effect compensator in 2-tone output spectrum.
Keywords
Behavior model; distortion; memory effect; GaN; Doherty amplifier;
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