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http://dx.doi.org/10.18770/KEPCO.2019.05.01.039

High Sensitivity Hydrogen Sensor Based on AlGaN/GaN-on-Si Heterostructure  

Choi, June-Heang (School of Electronic and Electrical Engineering, Hongik University)
Jo, Min-Gi (School of Electronic and Electrical Engineering, Hongik University)
Kim, Hyungtak (School of Electronic and Electrical Engineering, Hongik University)
Lee, Ho-Kyoung (School of Electronic and Electrical Engineering, Hongik University)
Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
Publication Information
KEPCO Journal on Electric Power and Energy / v.5, no.1, 2019 , pp. 39-43 More about this Journal
Abstract
Hydrogen energy has positive effects as an alternative energy source to overcome the energy shortage issues. On the other hand, since stability is very important in use, sensor technology that enables accurate and rapid detection of hydrogen gas is highly required. In this study, hydrogen sensor was developed on AlGaN/GaN heterostructure platform using Pd catalyst where a recess structure was employed to improve the sensitivity. Temperature and bias voltage dependencies on sensitivity were carefully investigated using a hydrogen concentration of 4% that is the safety threshold concentration. Due to the excellent properties of AlGaN/GaN heterostructure in conjunction with the recess structure, a very high sensitivity of 56% was achieved with a fast response speed of 0.75 sec.
Keywords
AlGaN/GaN. heterostructure; Pd catalyst; sensitivity; hydrogen; recess;
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