• Title/Summary/Keyword: ITO thin films

Search Result 528, Processing Time 0.031 seconds

Fabrication and characteristics of ITO thin films on CR39 substrate for transparent OTFT

  • Kwon, Sung-Yeol
    • Journal of Sensor Science and Technology
    • /
    • v.16 no.3
    • /
    • pp.229-233
    • /
    • 2007
  • The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

Characteristics of ITO Thin Films prepared on PC Substrate (PC 기판상에 제작된 ITO 박막의 특성)

  • Cho, Bum-Jin;Kim, Kyung-Hwan
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.20 no.2
    • /
    • pp.162-166
    • /
    • 2007
  • The ITO thin films were prepared by facing targets sputtering (FTS) system on polycarbonate (PC) substrate. The ITO thin films were deposited with a film thickness of 100 nm at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measure. The electrical and optical characteristics of the ITO thin films were evaluted by Hall Effect Measurement (EGK) and UV/VIS spectrometer (HP), respectively. From the results, the ITO thin films was deposited with a resistivity $8{\times}10^{4}\;{\Omega}-cm$ and transmittance over 80 %.

Crystallized Indium Tin Oxide Thin Films at a Low Temperature on Polymer Substrate by Off-axis RF Magnetron Sputtering

  • Choe, Hyeong-Jin;Jeong, Hyeon-Jun;Yun, Sun-Gil
    • Proceedings of the Materials Research Society of Korea Conference
    • /
    • 2011.10a
    • /
    • pp.22.1-22.1
    • /
    • 2011
  • In this study, off-axis RF magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The structural, optical and electrical properties of the obtained films depending on deposition parameters, such as sputtering power, gas flow and working pressure, have been investigated. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 100-nm thick ITO films showed a resistivity of about $4.2{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 81% at a wavelength of 550nm. The transmittance of the ITO thin films by an insertion of $SiO_2$ thin films on ITO films was improved.

  • PDF

Improvement of Optical and Electrical Properties of ITO/Ag/ITO Thin Films for Transparent Conducting Electrode (투명 전극 ITO/Ag/ITO 박막의 광학적 및 전기적 특성 향상 연구)

  • Shin, Yeon Bae;Kang, Dong-Won;Kim, Jeha
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.30 no.11
    • /
    • pp.740-744
    • /
    • 2017
  • Herein we studied the electrical and optical properties of indium tin oxide ITO/Ag/ITO multilayer thin films for application in transparent conducting electrodes. The ITO and Ag thin films were deposited onto soda lime glass (SLG) using radiofrequency and DC-sputtering methods, respectively. The as-synthesized ITO/Ag/ITO multilayer thin films were analyzed using 4-point probe, UV-Visible spectroscopy, and Hall measurement. We observed a rapid increase in electron concentration with increasing Ag thickness. However, electron mobility decreased with increasing Ag thickness. Finally, ITO/Ag/ITO multilayer thin films showed a characteristic low sheet resistance of $18{\Omega}/sq$ and high optical transmittance value (80%) with variation of Ag thickness (5~10 nm).

Characterisitics of RF/DC Sputter Grown-ITO/Ag/ITO Thin Films for Transparent Conducting Electrode (RF/DC 스퍼티 성장한 ITO/Ag/ITO 투명전극 박막의 특성 연구)

  • Lee, Youngjae;Kim, Jeha
    • Current Photovoltaic Research
    • /
    • v.10 no.1
    • /
    • pp.28-32
    • /
    • 2022
  • We investigated the optical and electrical characteristics of ITO/Ag/ITO (IAI) 3-layer thin films prepared by using RF/DC sputtering. To measure the thickness of all thin film samples, we used scanning electron microscopy. As a function of Ag thickness we characterized the optical transmittance and sheet resistance of the IAI samples by using UV-Visible spectroscopy and Hall measurement system, respectively. While the thickness of both ITO thin films in the 3-layered IAI samples were fixed at 50 nm, we varied Ag layer thickness in the range of 0 nm to 11 nm. The optical transmittance and sheet resistance of the 3-layered IAI thin films were found to vary strongly with the thickness of Ag film in the ITO (50 nm)/Ag(t0)/ITO (50 nm) thin film. For the best transparent conducting oxide (TCO) electrode, we obtained a 3-layered ITO (50 nm)/Ag (t0 = 8.5 nm)/ITO (50 nm) that showed an avrage optical transmittance, AVT = 90.12% in the visible light region of 380 nm to 780 nm and the sheet resistance, R = 7.24 Ω/□.

Characteristics of ITO thin films prepared on PC substrate (PC 기판상에 제작된 ITO 박막의 특성)

  • Kim, Kyung-Hwan;Cho, Bum-Jin;Keum, Min-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2006.06a
    • /
    • pp.420-421
    • /
    • 2006
  • The ITO thin films were prepared by FTS (Facing Targets Sputtering) system on polycarbonate(PC) substrate. The ITO thin films were deposited with a film thickness of 100nm at room temperature. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical and optical characteristics of the ITO thin films were evaluated by Hall Effect Measurement(EGK) and UV-VIS spectrometer(HP), respectively. From the results, the ITO thin film was deposited with a resistivity $8{\times}10^{-4}[{\Omega}-cm]$ and transmittance over 80%.

  • PDF

ITO Films Deposited by Sputter Method of Powder Target at Room Temperature. (상온에서 분말타겟의 스퍼터에 의해 증착된 ITO박막)

  • 김현후;이재형;신성호;신재혁;박광자
    • Journal of the Korean institute of surface engineering
    • /
    • v.33 no.5
    • /
    • pp.349-355
    • /
    • 2000
  • Indium tin oxide (ITO) thin films have been deposited on PET (polyethylene terephthalate) and glass substrates by a do magnetron sputter method of powder target without heat treatments such as substrate heater and post heat treatment. During the sputtering deposition, sputtering parameters such as sputtering power, working pressure, oxygen gas mixture, film thickness and substrate-target distance are important factors for the high quality of ITO thin films. The structural, electrical and optical properties of as-deposited ITO oxide films are investigated by sputtering power, oxygen partial pressure and films thickness among the several sputtering conditions. XRD patterns of ITO films are affected by sputtering power and pressure. As the power and pressure are increased, (411) and (422) peaks of ITO films are grown strongly. Electrical resistivity is also increased, as the sputtering power and pressure are increased. Transmittance of ITO thin films in the visible light ranges is lowered with an increase of sputtering power and film thickness. Reflectance of ITO films in infra-red region is decreased, as the power and pressure is increased.

  • PDF

Surface morphology and electrical properties of ITO thin films fabricated by RF magnetron sputtering method (고주파 마그네트론 스퍼터링 방법으로 제작한 ITO 박막의 표면 형태 및 전기적 특성)

  • Kwon, Sung-Yeol
    • Journal of Sensor Science and Technology
    • /
    • v.15 no.1
    • /
    • pp.71-75
    • /
    • 2006
  • ITO (Indium Tin Oxide) thin films have been fabricated by rf magnetron sputtering with a target of a mixture $In_{2}O_{3]$(90 wt%) and $SnO_{2}$ (10 wt%). ITO films were sputtered with substrate temperature from 30 to $300^{\circ}C$ and working pressure from 1 to under 0.1 m Torr. ITO thin films surface morphology and electrical properties analyzed by SEM Photographs, and X-ray diffractions patterns. The resistivity of ITO thin films was $1.8{\times}10^{-5}{\Omega}/cm$.

Properties of ITO thin films with film thickness at room temperature (막 두께 변화에 따라 실온 제작된 ITO 박막의 특성)

  • Kim, K.H.;Kim, H.W.;Keum, M.J.;Kim, H.K.
    • Proceedings of the KIEE Conference
    • /
    • 2005.07c
    • /
    • pp.1856-1858
    • /
    • 2005
  • In this study, Indium Tin Oxide(ITO) thin films were prepared at $O_2$ gas 0.2 sccm, no heating to substrate and working pressure 1mTorr with varying deposition time. We estimated structural, optical, electrical characteristics of ITO thin films as function of ITO thin films thickness. As a result, XRD peaks increased with increasing the thickness. The ITO thin film was fabricated with resistivity $4.23{\times}10^{-4}[{\Omega}{\cdot}cm]$, carrier mobility $52.9[cm^2/V{\cdot}sec]$, carrier concentration $2.79{\times}10^{20}[cm^{-3}]$. And we also observed that the SEM images of ITO thin films surface.

  • PDF

Characterization of the Crystallized ITO Thin Films Grown at a Low Temperature by Off-axis RF Magnetron Sputtering (Off-axis RF 마그네트론 스퍼터링법을 이용하여 저온에서 결정화된 ITO 박막의 특성)

  • Choi, Hyung-Jin;Jung, Hyun-June;Hur, Sung-Gi;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.24 no.2
    • /
    • pp.126-130
    • /
    • 2011
  • In this study, off-axis magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 58-nm thick ITO films showed a resistivity of about $2{\times}10-4{\Omega}{\cdot}cm$ and a transmittance of about 75% at a wavelength of 550 nm. The transmittance of the ITO thin films by an insertion of SiO2 thin films on ITO films was improved.