Abstract
In this study, off-axis RF magnetron sputtering was used for the crystallized ITO thin films at a low temperature of about $120^{\circ}C$ instead of the conventional RF sputtering because the off-axis sputtering can avoid the damage for the plasma as well as fabrication of thin films with a high quality. The structural, optical and electrical properties of the obtained films depending on deposition parameters, such as sputtering power, gas flow and working pressure, have been investigated. The ITO thin films grown on PET substrate at $120^{\circ}C$ were crystallized with a (222) preferred orientation. 100-nm thick ITO films showed a resistivity of about $4.2{\times}10^{-4}{\Omega}-cm$ and a transmittance of about 81% at a wavelength of 550nm. The transmittance of the ITO thin films by an insertion of $SiO_2$ thin films on ITO films was improved.
