• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.1
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• pp.103-108
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• 2002

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade In response to the constant demand for increased speed, decreased power, and increased packing density. The state -of-the-art simulation programs are developed by engineers and scientists. This paper has compared commercial programs of Micro-tec and ISE-TCAD in device simulation. This paper investigates LDD MOSFET using two simulators. Bias condition is applied to the devices with gate lengths(Lg) 180㎚. We have presented MOSFET's characteristics such as I-V characteristic and electric field, and compared Micro-tec with ISE TCAD.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.321-324
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• 2001

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased packing density. This paper has compared Micro-Tec with ISE-TCAD. This paper investigates LDD MOSFET using two simulators. Bias condition is applied to the devices with gate lengths 180nm. We have presented MOSF ET's characteristics such as I-V characteristic, electric field. and compared with Micro-Tec and ISE-TCAD.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.233-236
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• 2012

In this paper, the output characteristics of GaN-based LED considering blocking layer design variables are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering Al mole fraction of EBL, thickness of EBL, Al mole fraction of HBL and doping concentration of HBL are analyzed using ISE-TCAD.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.251-254
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• 2012

In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.693-695
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• 2003

In this paper, we have investigated temperature-dependent characteristics of current-voltage for double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated the temperature-dependent characteristics of current-voltage and drain voltage is changed from 0V to 5.0V at $V_{mg}$ =1.5V and $V_{sg}$ =3.0V. We have obtained a very good characteristics of current-voltage for 77K. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.490-493
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• 2002

In this study, we have investigated optimum value for side gate length and side gate voltage of double gate (DG) MOSFET with main gate and side gate. We know that optimum side gate voltage for each side length is about 3V. Also, we know that optimum side gate length for each main gate length is about 70nm. We have presented the transconductance and subthreshold slope for each side gate length. We have simulated using ISE-TCAD tool for characteristics analysis of device.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05b
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• pp.661-663
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• 2004

In this paper, we have investigated characteristics of C-V for double gate MOSFET with main gate and side gate by the variation of side sate length and side gate voltage. Main gate voltage is changed from -5V to +5V. We know that characteristics of C-V is good under the condition of LSG=70nm, VSG=3V, VD=2V. We have analyze characteristics of device by ISE-TCAD.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.1-8
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• 2005

In this paper, we analyzed the DC and RF characteristics of $0.1\;{\mu}m$ metamorphic high electron mobility transistor (MHEMT) using the ISE-TCAD simulation tool. we also analyzed the effects or the scaling on vertical and lateral dimensions such as a gate length, source-drain spacing, and channel thickness. We discussed the degradation of extrinsic transconductance $g_{m,max}$ in the MHEMTs adopting the gate length $(L_g)$ of $sub-0.1\;{\mu}m$. We suggested the model describing the effects on the vertical and lateral parameter scaling.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.686-689
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• 2012

In this paper, the GaN-based LED characteristics are analyzed using ISE-TCAD. The LED consists of GaN barriers, active region of InGaN quantum well, AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power characteristics of LED considering Auger recombination rate, thickness of quantum well and number of quantum wells are analyzed and some criteria for the design of LED are proposed.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.777-779
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• 2003

In this paper, we have investigated Characteristics of C-V for Double gate MOSFET with main gate and side gate. DG MOSFET has the main gate length of 50nm and the side gate length of 70nm. We have investigated characteristics of C-V and main gate voltage is changed from -5V to ＋5V. Also we have investigated characteristics of C-V for DG MOSFET when the side gate length is changed from 40nm to 90nm. As the side gate length is reduced, the transconductance is increased and the capacitance is reduced. When the side gate voltage is 3V, we know that C-V curves are bending at near the main gate voltage of 1.8V. We have simulated using ISE-TCAD tool for characteristics analysis of device.