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Modeling and Optimization of $sub-0.1\;{\mu}m$ gate Metamorphic High Electron Mobility Transistors  

Han Min (Millimeter-wave INnovation Technology research center, MINT)
Kim Sam-Dong (Millimeter-wave INnovation Technology research center, MINT)
Rhee Jin-Koo (Millimeter-wave INnovation Technology research center, MINT)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.42, no.3, 2005 , pp. 1-8 More about this Journal
Abstract
In this paper, we analyzed the DC and RF characteristics of $0.1\;{\mu}m$ metamorphic high electron mobility transistor (MHEMT) using the ISE-TCAD simulation tool. we also analyzed the effects or the scaling on vertical and lateral dimensions such as a gate length, source-drain spacing, and channel thickness. We discussed the degradation of extrinsic transconductance $g_{m,max}$ in the MHEMTs adopting the gate length $(L_g)$ of $sub-0.1\;{\mu}m$. We suggested the model describing the effects on the vertical and lateral parameter scaling.
Keywords
metamorphic high electron mobility transistor (MHEMT); ISE; scaling; modeling;
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