• Journal of the Semiconductor & Display Technology
• /
• v.21 no.3
• /
• pp.125-129
• /
• 2022

The current display technology tends to be highly integrated with high resolution, the element size is gradually downsized, and the structure becomes complicated. Inductively coupled plasma (ICP) dry etcher of various types of etching equipment is a structure that places a large multi-divisional antenna source on the top lid, passes current to the Antenna, and generates plasma using the induced magnetic field generated at this time. However, in the case of a device of a large area size, a support that can withstand a load structurally is necessary, and when these support portions are applied, arrangement of antenna becomes difficult, which causes reduction in uniformity. As described above, the development of antenna source of a large area having a uniform plasma density on the whole surface is difficult to restrict hardware (H/W). As a solution to this problem, we confirmed the change in uniformity of plasma by applying two kinds of specific shape faraday shield(FICP) to the lower part of the large area upper lid antenna of 6 and 8th more than that generation size. In this thesis, we verify the faraday shield effect which can improve plasma uniformity control of ICP dry etcher equipment applied to medium and large displays.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.180-181
• /
• 2015

본 논문에서는 ICP Poly Etcher를 이용한 Dry Etch에서 몇가지 공정조건의 변화에 따른 Etching 특성 변화를 연구하였다. 주요 가스유량들이 증가 할 때, Poly-Si 의 Etch rate는 증가 하였으며 Uniformity는 나빠진 것을 확인 할 수 있었고 다른 특성들은 특별한 변화를 보이지 않았다. 주요 Gas인 HBr의 증가는 PR(Photo Resist)와 Uniformity에 영향을 주었다. 이 논문을 통해 HBr의 유량이 Poly-Si Etching에 영향을 주는 결과를 알아 볼 수 있었고 HBr 가스의 유량 증가가 Polymer의 생성에 영향을 줘 Selectivity와 Uniformity를 증가 시킨다는 것도 확인 해 볼 수 있었다.

• Proceedings of the KIEE Conference
• /
• 1997.11a
• /
• pp.276-278
• /
• 1997

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

• Proceedings of the IEEK Conference
• /
• 1999.06a
• /
• pp.922-925
• /
• 1999

The Silylation photo-resist etch process was tested by Enhanced-ICP dry etcher. The comparison of the two process results of micro pattern etching with 0.25${\mu}{\textrm}{m}$ CD by E-ICP and ICP reveals that E-ICP has better quality than ICP The etch rate and the microloading effect was improved in E-ICP Especially, the problem of the lateral etch was improved in E-ICP.

• Journal of the Korean Vacuum Society
• /
• v.15 no.6
• /
• pp.630-636
• /
• 2006

Scale down of semiconductor gate pattern will make progress centrally line width into transistor according to the high integration and high density of flash memory semiconductor. Recently, the many researchers are in the process of developing research for using the ONO(oxide-nitride-oxide) technology for the gate pattern give body to line breadth of less 100 nm. Therefore, etch rate and etch profile of the line width detail of less 100 nm affect important factor in a semiconductor process. In case of increasing of the platen power up to 50 W at the ICP etcher, etch rate and PR selectivity showed good result when the platen power of ICP etcher has 100 W. Also, in case of changing of HBr gas flux at the platen power of 100 W, etch rate was decreasing and PR selectivity is increasing. We founded terms that have etch rate 320 nm/min, PR selectivity 3.5:1 and etch slope have vertical in the case of giving the platen power 100 W and HBr gas 35 sccm at the ICP etcher. Also notch was not formed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.17 no.1
• /
• pp.1-6
• /
• 2004

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.08a
• /
• pp.292-292
• /
• 2008

• Corrosion Science and Technology
• /
• v.2 no.5
• /
• pp.238-242
• /
• 2003

The characteristics of Ru etching using $O_2/Cl_2$ plasmas were investigated by employing inductively coupled plasma (ICP) etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with the gas flow ratio, bias power, total gas flow rate, and source power were scrutinized. A high etching slope (${\sim}86^{\circ}$) and a smooth surface after etching was attained using $O_2/Cl_2$ inductively coupled plasma.

• Applied Science and Convergence Technology
• /
• v.24 no.2
• /
• pp.27-32
• /
• 2015

We analyzed the destruction patterns of a turbo-molecular pump (TMP) resulting from its sudden exposure of a foreline to the atmospheric pressure due to a destruction of the foreline connecting clamp of an ICP dry etcher for 300 mm wafers during high-vacuum operation ($5{\times}10^{-6}$ Torr). Unlike in the case of view port's breakage, the TMP's rotor module was crashed inside the chamber. The primary damage resulted from the collision of the blades and stators, and the secondary damage resulted from the breaking of the rotor - driving shaft assembly. The fixing screws of the rotor and axial shaft were bent and broken when the TMP controller output the maximum current even after the crash event. Electrical power consumption analysis of the TMP power controller confirmed it. The stress distributions were analyzed by a finite element method using CFD-ACE+ multi physics software. Rotating inertia of each parts and kinetic energies were calculated as well. 68% of the rotational kinetic energy is deposited by the rotor - shaft module.

• Applied Science and Convergence Technology
• /
• v.26 no.6
• /
• pp.189-194
• /
• 2017

Effects of gas injection scheme and rf driving current configuration in a dual turn inductively coupled plasma (ICP) system were analyzed by 3D numerical simulation using CFD-ACE+. Injected gases from a tunable gas nozzle system (TGN) having 12 horizontal and 12 vertical nozzles showed different paths to the pumping surface. The maximum velocity from the nozzle reached Mach 2.2 with 2.2 Pa of Ar. More than half of the injected gases from the right side of the TGN were found to go to the pump without touching the wafer surface by massless particle tracing method. Gases from the vertical nozzle with 45 degree slanted angle soared up to the hottest region beneath the ceramic lid between the inner and the outer rf turn of the antenna. Under reversed driving current configuration, the highest rf power absorption region were separated into the two inner islands and the four peaked donut region.