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http://dx.doi.org/10.4313/JKEM.2004.17.1.001

Dry Etching of Polysilicon in Hbr/O2 Inductively Coupled Plasmas  

범성진 (서울시립대학교 신소재공학과)
송오성 (서울시립대학교 신소재공학과)
이혜영 (서울대학교 반도체공동연구소)
김종준 (서울대학교 반도체공동연구소)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.17, no.1, 2004 , pp. 1-6 More about this Journal
Abstract
Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.
Keywords
HBr gas; $O_2$ gas; polysilicon; Dry etch; ICP etcher; Etch rate;
Citations & Related Records
Times Cited By KSCI : 2  (Citation Analysis)
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