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Dry Etching of Ru Electrodes using O2/Cl2 Inductively Coupled Plasmas  

Kim, Hyoun Woo (School of Materials Science and Engineering, Inha University)
Publication Information
Corrosion Science and Technology / v.2, no.5, 2003 , pp. 238-242 More about this Journal
Abstract
The characteristics of Ru etching using $O_2/Cl_2$ plasmas were investigated by employing inductively coupled plasma (ICP) etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with the gas flow ratio, bias power, total gas flow rate, and source power were scrutinized. A high etching slope (${\sim}86^{\circ}$) and a smooth surface after etching was attained using $O_2/Cl_2$ inductively coupled plasma.
Keywords
Ru; etching; ICP; plasma;
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