• Title/Summary/Keyword: IC circuit

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Power Bus Noise Analysis on IC using Wide-Band Ferrite Bead Model (광대역 페라이트 비드 모델을 이용한 IC 전원단의 잡음해석)

  • 이신영;손경주;최우신;이해영
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.14 no.12
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    • pp.1276-1282
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    • 2003
  • The SMT(Surface Mount Type) ferrite bead used to reduce the influx of power bus noise is modeled with parallel capacitor(C), series resistor(R) and series inductor(L). The simple equivalent circuit modeling doesn't agree with the measurement result. In this paper, we proposed the accurate equivalent circuit model of the ferrite bead at wide frequency range(50 MHz∼3 GHz) and analyzed the noise effect to the high speed IC(Integrate Circuit) with ferrite bead or not.

Design and Implementation of OLED Display Driver IC (OLED 디스플레이 구동 IC 설계 및 구현)

  • Lee, Seung-Eun;Oh, Won-Seok;Park, Jin;Lee, Sung-Chul;Choi, Jong-Chan
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.293-296
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    • 2002
  • This paper proposes new driving methods for designing a driver independent of the current property of organic light emitting diodes (OLED) displays. The proposed methods are the Look-Up Table (LUT) and the Pulse Width Modulation (PWM). The LUT is used to handle the amount of the current for driving the OLED display panel and the PWM is applied to represent the gray scale on the OLED display panel. Segment and common drivers were implemented using delay circuits to prevent short-circuit current and a DC-DC converter was designed to supply the drivers with a power source. In particular, tile proposed methods are used for the manufacturing of 1.8" 128$\times$128 dot passive matrix OLED display panel. The designed circuit was fabricated using 0.6w, 2-poly, 3-metal, CMOS process and applied to the Personal Communication System (PCS) phone successfully.ully.

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Radiation Effects on PWM Controller of DC/DC Power Buck Converter (DC/DC 전력 강압 컨버터의 PWM 제어기 방사선 영향)

  • Lho, Young-Hwan
    • Journal of the Korean Society for Railway
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    • v.15 no.2
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    • pp.116-121
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    • 2012
  • DC/DC switching power converters produce DC output voltages from different DC input sources. The converter is used in regenerative braking of DC motors to return energy back in the supply, resulting in energy savings for the systems containing frequent stops. The DC/DC converter is composed of a PWM-IC (pulse width modulation integrated circuit) controller, a MOSFET (metal-oxide semi-conductor field-effect transistor), an inductor, capacitors, and resistors, etc. PWM is applied to control and regulate the total output voltage. In this paper, radiation shows the main influence on the changes in the electrical characteristics of comparator, operational amplifier, etc. in PWM-IC. In the PWM-IC operation, the missing pulses, the changes in pulse width, and the changes of the output waveform are studied by the simulation program with integrated circuit emphasis (SPICE) and compared with experiments.

A 32-Gb/s Inductorless Output Buffer Circuit with Adjustable Pre-emphasis in 65-nm CMOS

  • Tanaka, Tomoki;Kishine, Keiji;Tsuchiya, Akira;Inaba, Hiromi;Omoto, Daichi
    • IEIE Transactions on Smart Processing and Computing
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    • v.5 no.3
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    • pp.207-214
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    • 2016
  • Optical communication systems are rapidly spread following increases in data traffic. In this work, a 32-Gb/s inductorless output buffer circuit with adjustable pre-emphasis is proposed. The proposed circuit consists of an output buffer circuit and an emphasis circuit. The emphasis circuit emphasizes the high frequency components and adds the characteristics of the output buffer circuit. We proposed a design method using a small-signal equivalent-circuit model and designed the compensation characteristics with a 65-nm CMOS process in detail using HSPICE simulation. We also realized adjustable emphasis characteristics by controlling the voltage. To confirm the advantages of the proposed circuit and the design method, we fabricated an output buffer IC with adjustable pre-emphasis. We measured the jitter and eye height with a 32-Gb/s input using the IC. Measurement results of double-emphasis showed that the jitter was 14% lower, and the eye height was 59% larger than single-emphasis, indicating that our proposed configuration can be applied to the design of an output buffer circuit for higher operation speed.

Characteristics of the Sinusoidal Active Oscillator Circuit for Integrated Circuit Realization(II) (IC 실현에 적합한 정현파 능동 발진기의 회로 및 특성에 관한 연구(II))

  • Park, Chong-Yeun;Lee, Weon-Gun;Sohn, Tae-Ho
    • Journal of Industrial Technology
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    • v.11
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    • pp.43-53
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    • 1991
  • Two kinds of simple active oscillators are proposed and analyzed assuming that operational amplifier has two-poles frequency characteristics. The first circuit is composed of one operational amplifier, one resistor and one grounded capacitor. The second oscillator is realized with one operational amplifier and three resitors. Proposed oscillators have the low sensitivity of the oscillation frequency for little variations of the passive element values. By the experimental results obtained with Op-Amp. ${\mu}A741$, the simple oscillators can be useful for the frequency range $1.25 KHz{\leq}f_{01}{\leq}40KHz$ for the active-RC type or $45.45 KHz{\leq}f_{02}{\leq}400KHz$ for the active-R oscillator, and it is shown to transform the active-R oscillator circuit into the voltage controlled type. Therefore, two kinds of oscillator circuit are attractive for the IC realization, because they have one operational amplifier, one resistor and one grounded capacitor, or three resistors.

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Immunity Test for Semiconductor Integrated Circuits Considering Power Transfer Efficiency of the Bulk Current Injection Method

  • Kim, NaHyun;Nah, Wansoo;Kim, SoYoung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.2
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    • pp.202-211
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    • 2014
  • The bulk current injection (BCI) and direct power injection (DPI) method have been established as the standards for the electromagnetic susceptibility (EMS) test. Because the BCI test uses a probe to inject magnetically coupled electromagnetic (EM) noise, there is a significant difference between the power supplied by the radio frequency (RF) generator and that transferred to the integrated circuit (IC). Thus, the immunity estimated by the forward power cannot show the susceptibility of the IC itself. This paper derives the real injected power at the failure point of the IC using the power transfer efficiency of the BCI method. We propose and mathematically derive the power transfer efficiency based on equivalent circuit models representing the BCI test setup. The BCI test is performed on I/O buffers with and without decoupling capacitors, and their immunities are evaluated based on the traditional forward power and the real injected power proposed in this work. The real injected power shows the actual noise power level that the IC can tolerate. Using the real injected power as an indicator for the EMS test, we show that the on-chip decoupling capacitor enhances the EM noise immunity.

Design of the Driver IC for 500 V Half-bridge Converter using Single Ended Level Shifter with Large Noise Immunity (잡음 내성이 큰 단일 출력 레벨 쉬프터를 이용한 500 V 하프브리지 컨버터용 구동 IC 설계)

  • Park, Hyun-Il;Song, Ki-Nam;Lee, Yong-An;Kim, Hyoung-Woo;Kim, Ki-Hyun;Seo, Kil-Soo;Han, Seok-Bung
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.719-726
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    • 2008
  • In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

A New CMOS RF Model for RF IC Design (RF IC 설계를 위한 새로운 CMOS RF 모델)

  • 박광민
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.8
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    • pp.555-559
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    • 2003
  • In this paper, a new CMOS RF model for RF IC design including the capacitance effect, the skin effect, and the proximity effect between metal lines on the Si surface is proposed for tile first time for accurately predicting the RF behavior of CMOS devices. The capacitances between metal lines on the Si surface are modeled with the layout. And the skin effect is modeled with a parallel branch added in equivalent circuit of metal line. The proximity effect is modeled by adding the mutual inductance between cross-coupled inductances in the ladder circuit representation. Compared to the BSIM 3v3. the proposed RF model shows good agreements with the measured data and shows well the frequency dependent behavior of devices in GHz ranges.

Design and Implementation of hardware module to process contactless protocol(Type-B) for IC card (IC카드를 위한 비접촉 프로토콜(Type-B) 처리 모듈의 설계 및 구현)

  • Jeon, Yong-Sung;Park, Ji-Mann;Ju, Hong-Il;Jun, Sung-Ik
    • Proceedings of the KIEE Conference
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    • 2002.11c
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    • pp.481-484
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    • 2002
  • In recent, the contactless IC card is widely used in traffic, access control system and so forth. And its use becomes a general tendency more and more because of the development of RF technology and improvement of requirement for user convenience. This paper describes the hardware module to process contactless protocol for implementation contactless IC card. And the hardware module consists of specific digital logic circuits that analyze digital signal from analog circuit and then generate data & status signal for CPU, and that convert the data from CPU into digital signal for analog circuit.

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Development of A Low Power Consuming Semiconductor IC Having High Sensitivity for Earth Leakage Current Detection (누전전류 검출을 위한 고감도, 저전력 반도체 IC 개발)

  • Kim, Il-Ki;Lee, Seung-Yo
    • Proceedings of the KIPE Conference
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    • 2010.07a
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    • pp.113-114
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    • 2010
  • 정부의 친환경, 에너지절감 정책에 따라 누전차단 기능을 갖는 반도체 IC에 있어서도 고감도의 성능을 가지면서도 전력 소모가 적은 IC의 개발이 요구 되고 있다. 본 논문에서는 산업용 누전차단기(Earth Leakage Circuit Breaker)에 사용되는 핵심 반도체로서 고감도이면서도 저전력 소모를 하는 누전전류 검출 IC의 개발을 수행한다.

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