• 한국전자파학회논문지
• /
• 제14권12호
• /
• pp.1276-1282
• /
• 2003

SMT 타입의 페라이트 비드(ferrite bead)는 전원단에서 발생되는 잡음(noise)이 회로 소자로 유입되는 것을 막기 위해 사용되는 소자로 병렬 캐패시터(capacitor)와 직렬 인덕터(inductor) 및 저항(resistor)을 이용하여 등가 모델화된다. 이와 같은 간단한 페라이트 비드의 등가 모델은 광대역 범위에서 측정 결과와 일치하지 않는다. 본 논문에서는 광대 역(50 MHz∼3 GHz)에서 정확한 페라이트 비드의 모델을 제시하고 페라이트 비드가 있을 때와 없을 때 전원단 잡음의 회로 소자에 미치는 영향을 고찰하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
• /
• pp.293-296
• /
• 2002

This paper proposes new driving methods for designing a driver independent of the current property of organic light emitting diodes (OLED) displays. The proposed methods are the Look-Up Table (LUT) and the Pulse Width Modulation (PWM). The LUT is used to handle the amount of the current for driving the OLED display panel and the PWM is applied to represent the gray scale on the OLED display panel. Segment and common drivers were implemented using delay circuits to prevent short-circuit current and a DC-DC converter was designed to supply the drivers with a power source. In particular, tile proposed methods are used for the manufacturing of 1.8" 128$\times$128 dot passive matrix OLED display panel. The designed circuit was fabricated using 0.6w, 2-poly, 3-metal, CMOS process and applied to the Personal Communication System (PCS) phone successfully.ully.

• 한국철도학회논문집
• /
• 제15권2호
• /
• pp.116-121
• /
• 2012

DC/DC스위칭 전력 컨버터는 임의의 직류전원을 부하가 요구하는 형태의 직류전원으로 변환시킨다. DC/DC 컨버터는 PWM-IC를 이용하여 주기적으로 입력측에서 출력측으로 전달되는 에너지를 제어하는 기능을 수행하는데, PWM-IC(펄스폭 변조-집적회로), MOSFET(산화물-반도체 전계 효과 트랜지스터), 인덕터, 콘덴서, 저항 등으로 구성되어 있다. 방사선의 영향으로 DC/DC 컨버터의 PWM-IC 를 구성하는 비교기(comparator)와 연산증폭기(OP-Amp.) 등 전자소자의 열화 효과(radiation effects)가 발생되는데, PWM-IC 동작에서 SPICE 시뮬레이션과 실험을 통해 펄스의 상실, 펄스폭의 변화, 그리고 출력파형의 변화를 연구하는데 있다.

• IEIE Transactions on Smart Processing and Computing
• /
• 제5권3호
• /
• pp.207-214
• /
• 2016

Optical communication systems are rapidly spread following increases in data traffic. In this work, a 32-Gb/s inductorless output buffer circuit with adjustable pre-emphasis is proposed. The proposed circuit consists of an output buffer circuit and an emphasis circuit. The emphasis circuit emphasizes the high frequency components and adds the characteristics of the output buffer circuit. We proposed a design method using a small-signal equivalent-circuit model and designed the compensation characteristics with a 65-nm CMOS process in detail using HSPICE simulation. We also realized adjustable emphasis characteristics by controlling the voltage. To confirm the advantages of the proposed circuit and the design method, we fabricated an output buffer IC with adjustable pre-emphasis. We measured the jitter and eye height with a 32-Gb/s input using the IC. Measurement results of double-emphasis showed that the jitter was 14% lower, and the eye height was 59% larger than single-emphasis, indicating that our proposed configuration can be applied to the design of an output buffer circuit for higher operation speed.

• 산업기술연구
• /
• 제11권
• /
• pp.43-53
• /
• 1991

Two kinds of simple active oscillators are proposed and analyzed assuming that operational amplifier has two-poles frequency characteristics. The first circuit is composed of one operational amplifier, one resistor and one grounded capacitor. The second oscillator is realized with one operational amplifier and three resitors. Proposed oscillators have the low sensitivity of the oscillation frequency for little variations of the passive element values. By the experimental results obtained with Op-Amp. ${\mu}A741$, the simple oscillators can be useful for the frequency range $1.25 KHz{\leq}f_{01}{\leq}40KHz$ for the active-RC type or $45.45 KHz{\leq}f_{02}{\leq}400KHz$ for the active-R oscillator, and it is shown to transform the active-R oscillator circuit into the voltage controlled type. Therefore, two kinds of oscillator circuit are attractive for the IC realization, because they have one operational amplifier, one resistor and one grounded capacitor, or three resistors.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제14권2호
• /
• pp.202-211
• /
• 2014

The bulk current injection (BCI) and direct power injection (DPI) method have been established as the standards for the electromagnetic susceptibility (EMS) test. Because the BCI test uses a probe to inject magnetically coupled electromagnetic (EM) noise, there is a significant difference between the power supplied by the radio frequency (RF) generator and that transferred to the integrated circuit (IC). Thus, the immunity estimated by the forward power cannot show the susceptibility of the IC itself. This paper derives the real injected power at the failure point of the IC using the power transfer efficiency of the BCI method. We propose and mathematically derive the power transfer efficiency based on equivalent circuit models representing the BCI test setup. The BCI test is performed on I/O buffers with and without decoupling capacitors, and their immunities are evaluated based on the traditional forward power and the real injected power proposed in this work. The real injected power shows the actual noise power level that the IC can tolerate. Using the real injected power as an indicator for the EMS test, we show that the on-chip decoupling capacitor enhances the EM noise immunity.

• 한국전기전자재료학회논문지
• /
• 제21권8호
• /
• pp.719-726
• /
• 2008

In this paper, we designed driving IC for 500 V resonant half-bridge type power converter, In this single-ended level shifter, chip area and power dissipation was decreased by 50% and 23.5% each compared to the conventional dual-ended level shifter. Also, this newly designed circuit solved the biggest problem of conventional flip-flop type level shifter in which the power MOSFET were turned on simultaneously due to the large dv/dt noise. The proposed high side level shifter included switching noise protection circuit and schmmit trigger to minimize the effect of displacement current flowing through LDMOS of level shifter when power MOSFET is operating. The designing process was proved reasonable by conducting Spectre and PSpice simulation on this circuit using 1${\mu}m$ BCD process parameter.

• 대한전자공학회논문지SD
• /
• 제40권8호
• /
• pp.555-559
• /
• 2003

본 논문에서는 CMOS 소자의 RF 동작을 정확히 예측하기 위해 Si 표면에서의 메탈 라인 사이의 커패시턴스 효과와 표피효과 및 근접효과를 포함한 RF IC 설계를 위한 새로운 CMOS RF 모델을 처음으로 제시하였다. Si 표면에서의 메탈 라인 사이의 커패시턴스는 레이아웃에 기초하여 모델링하였으며, 표피효과는 메탈 라인의 등가회로에 병렬회로를 부가하여 사다리꼴 등가회로로 구현하였다. 근접효과는 사다리꼴 등가회로에서 교차 결합된 인덕턴스 사이의 상호 인덕턴스를 부가함으로써 모델링하였다. 제안된 RF 모델은 BSIM 3v3에 비해 측정 데이터와 잘 일치하였으며, GHz 영역에서 소자 동작의 주파수 종속성을 잘 보여주었다.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2002년도 합동 추계학술대회 논문집 정보 및 제어부문
• /
• pp.481-484
• /
• 2002

In recent, the contactless IC card is widely used in traffic, access control system and so forth. And its use becomes a general tendency more and more because of the development of RF technology and improvement of requirement for user convenience. This paper describes the hardware module to process contactless protocol for implementation contactless IC card. And the hardware module consists of specific digital logic circuits that analyze digital signal from analog circuit and then generate data & status signal for CPU, and that convert the data from CPU into digital signal for analog circuit.

• 전력전자학회:학술대회논문집
• /
• 전력전자학회 2010년도 하계학술대회 논문집
• /
• pp.113-114
• /
• 2010

정부의 친환경, 에너지절감 정책에 따라 누전차단 기능을 갖는 반도체 IC에 있어서도 고감도의 성능을 가지면서도 전력 소모가 적은 IC의 개발이 요구 되고 있다. 본 논문에서는 산업용 누전차단기(Earth Leakage Circuit Breaker)에 사용되는 핵심 반도체로서 고감도이면서도 저전력 소모를 하는 누전전류 검출 IC의 개발을 수행한다.