• Title/Summary/Keyword: Horizontal Wafer

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Kinematic Analysis of a 6-DOF Ultra-Precision Positioning Stage Based on Flexure Hinge (플렉셔 힌지 기반 6-자유도 초정밀 위치 결정 스테이지의 기구학 해석)

  • Shin, Hyun-Pyo;Moon, Jun-Hee
    • Journal of the Korean Society for Precision Engineering
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    • v.33 no.7
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    • pp.579-586
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    • 2016
  • This paper describes kinematic analysis of a 6-degrees-of-freedom (DOF) ultra-precision positioning stage based on a flexure hinge. The stage is designed for processes which require ultra-precision and high load capacities, e.g. wafer-level precision bonding/assembly. During the initial design process, inverse and forward kinematic analyses were performed to actuate the precision positioning stage and to calculate workspace. A two-step procedure was used for inverse kinematic analysis. The first step involved calculating the amount of actuation of the horizontal actuation units. The second step involved calculating the amount of actuation of the vertical actuation unit, given the the results of the first step, by including a lever hinge mechanism adopted for motion amplification. Forward kinematic analysis was performed by defining six distance relationships between hinge positions for in-plane and out-of-plane motion. Finally, the result of a circular path actuation test with respect to the x-y, y-z, and x-z planes is presented.

Development of Surface Acoustic Wave Sensor for Viscosity Measurement of Low Viscose Liquid Using Love Wave (Love파를 이용한 저점성 유체 점도 측정용 표면 탄성파 센서 개발)

  • Lee, Sang-Dae;Kim, Ki-Bok;Lee, Dae-Su
    • Journal of Biosystems Engineering
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    • v.33 no.4
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    • pp.282-287
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    • 2008
  • Love wave is one of the shear horizontal waves and it can propagate between two layers in liquid without energy loss. The SAW (surface acoustic wave) sensor using Love wave is very useful for real time measurement of the viscosity of liquid with high sensitivity. In this study, the 77 MHz and 155 MHz Love wave SAW sensors were fabricated and use to measure the viscosity of low viscous liquid. To generate the surface acoustic wave, the inter-digital transducers were fabricated on the quartz crystal wafer. In order to obtain the optimal thickness of the coating film (novolac photoresist) generating the Love wave on the surface of SAW device, theoretical calculation was performed. The performances of fabricated Love wave SAW sensors were tested. As test liquid, pure water and glycerol solutions having different concentrations were used. Since the determination coefficients of the regression equations for measuring the viscosity of liquid are greater than 0.98, the developed Love wave SAW sensors in this study will be very useful for precise measurement of viscosity of liquid.

Refilled mask structure for Minimizing Shadowing Effect on EUV Lithography

  • Ahn, Jin-Ho;Shin, Hyun-Duck;Jeong, Chang-Young
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.4
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    • pp.13-18
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    • 2010
  • Extreme ultraviolet (EUV) lithography using 13.5 nm wavelengths is expected to be adopted as a mass production technology for 32 nm half pitch and below. One of the new issues introduced by EUV lithography is the shadowing effect. Mask shadowing is a unique phenomenon caused by using mirror-based mask with an oblique incident angle of light. This results in a horizontal-vertical (H-V) biasing effect and ellipticity in the contact hole pattern. To minimize the shadowing effect, a refilled mask is an available option. The concept of refilled mask structure can be implemented by partial etching into the multilayer and then refilling the trench with an absorber material. The simulations were carried out to confirm the possibility of application of refilled mask in 32 nm line-and-space pattern under the condition of preproduction tool. The effect of sidewall angle in refilled mask is evaluated on image contrast and critical dimension (CD) on the wafer. We also simulated the effect of refilled absorber thickness on aerial image, H-V CD bias, and overlapping process window. Finally, we concluded that the refilled absorber thickness for minimizing shadowing effect should be thinner than etched depth.

Characteristic Analysis of Linear Permanent Magnet Synchronous Motor according to steel and back iron. (철심의 유/무에 따른 직선형 영구 자석 동기 모터의 특성 해석)

  • Jang, Seok-Myeong;You, Dae-Joon;Lee, Sung-Ho;Chioi, Jang-Young;Jang, Won-Bum
    • Proceedings of the KIEE Conference
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    • 2003.07b
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    • pp.1054-1056
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    • 2003
  • The slotless Permanent-Magnet Linear Synchronous Motors (PMLSM) have been developed for factory automation, transportation applications, wafer steppers, conveyance system, and so on. The current analysis and design are treated in air-cored PMLSM. This paper presents a design and analysis solutions for the general class of iron-cored Permanent magnet Linear Synchronous motor (PMLSM). In our design and analysis, rotor consisting of permanent magnets and slot less iron-cored coil stator are treated in a uniform way via vector potiential. For one such motor structure we give analytical formulas for its magnetic field, opitimal permanent magnet and winding coil thickness, trust force. We also provide comparisons of three types in Halbach, vertical, and horizontal magnet array.

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Growth and Optical Properties for $AgGaSe_2$ Single Crystal Thin Films by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한$AgGaSe_2$ 단결정 박막 성장과 광학적 특성)

  • Hong, Kwang-Joon;Back, Seoung-Nam
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.124-127
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    • 2003
  • The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnance. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition ($E_x$) observable only in high quality crystal and neutral bound excition ($D^{\circ}$,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

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Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor

  • Im Ik-Tae;Choi Nag Jung;Sugiyama Masakazu;Nakano Yoshiyaki;Shimogaki Yukihiro;Kim Byoung Ho;Kim Kwang-Sun
    • Journal of Mechanical Science and Technology
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    • v.19 no.6
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    • pp.1338-1346
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    • 2005
  • Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.

Growth and Optoelectrical Properties for $AgGaSe_2$ Single Crystal Thin Films ($AgGaSe_2$ 단결정 박막 성장과 광전기적 특성)

  • Hong, Kwang-Joon;You, Sang-Ha
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.11a
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    • pp.171-174
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    • 2004
  • The stochiometric $AgGaSe_2$ polycrystalline mixture of evaporating materials for the $AgGaSe_2$ single crystal thin film was prepared from horizontal furnace. To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal and semi-insulating GaAs(100) wafer were used as source material and substrate for the Hot Wall Epitaxy (HWE) system, respectively. The source and substrate temperature were fixed at $630^{\circ}C$ and $420^{\circ}C$, respectively. The thickness of grown single crystal thin films is $2.1{\mu}m$. The single crystal thin films were investigated by photoluminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of $AgGaSe_2$ single crystal thin films measured from Hall effect by van der Pauw method are $4.89{\times}10^{17}\;cm^{-3},\;129cm^2/V{\cdot}s$ at 293K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the $AgGaSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}S_o$ and the crystal field splitting ${\Delta}C_r$ were 0.1762 eV and 0.2494 eV at 10 K, respectively. From the photoluminescence measurement of $AgGaSe_2$ single crystal thin film, we observed free excition $(E_X)$ observable only in high quality crystal and neutral bound exciton $(D^o,X)$ having very strong peak intensity And, the full width at half maximum and binding energy of neutral donor bound excition were 8 meV and 14.1 meV, respectively. By Haynes rule, an activation energy of impurity was 141 meV.

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Sensitivity Improvement of 3-D Hall Sensor using Anisotropic Etching and Ni/Fe Thin Films (트랜치 구조를 갖는 3차원 홀 센서의 감도 개선에 관한 연구)

  • 이지연;최채형
    • Journal of the Microelectronics and Packaging Society
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    • v.8 no.4
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    • pp.17-23
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    • 2001
  • The 3-D Hall sensor has two horizontal magnetic field sensing parts ($\chi$, y components) and one vertical magnetic field sensing part (z component). For conventional, 3-D Hall sensor it is general that the sensitivity for $B_{z}$ is about 1/10 compared with those for $B_\chi$ or $B_y$. Therefore, in this work, we proposed 3-D Hall sensor with new structure. We have increased the sensitivity about 6 times to form the trench using anisotropic etching. And we have increased the sensitivity for the $B_z$ by 80% compared with those of $B_\chi$ and$B_y$ using deposition of the ferromagnetic thin films on the bottom surface of the wafer to concentrate the magnetic fluxes. When the input current was 3 mA, sensitivities of the fabricated sensor with Ni/Fe film for $B_\chi, B_y$ and $B_{z}$ were measured as 120.1 mV/T, 111.7 mV/T, 95.3 mV/T, respectively. The measured linearity of the sensor was within $\pm$3% of error.

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The Effects of Current Types on Through Via Hole Filling for 3D-SiP Application (전류인가 방법이 3D-SiP용 Through Via Hole의 Filling에 미치는 영향)

  • Chang, Gun-Ho;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.4
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    • pp.45-50
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    • 2006
  • Copper via filling is the important factor in 3-D stacking interconnection of SiP (system in package). As the packaging density is getting higher, the size of via is getting smaller. When DC electroplating is applied, a defect-free hole cannot be obtained in a small size via hole. To prevent the defects in holes, pulse and pulse reverse current was applied in copper via filling. The holes, $20\and\;50{\mu}m$ in diameter and $100{\sim}190\;{\mu}m$ in height. The holes were prepared by DRIE method. Ta was sputtered for copper diffusion barrier followed by copper seed layer IMP sputtering. Via specimen were filled by DC, pulse and pulse-reverse current electroplating methods. The effects of additives and current types on copper deposits were investigated. Vertical and horizontal cross section of via were observed by SEM to find the defects in via. When pulse-reverse electroplating method was used, defect free via were successfully obtained.

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Effects of Occlusal Condition and Clenching Force on the Mandibular Torque Rotational Movement (교합조건 및 이악물기 힘의 변화가 하악의 비틀림 회전운동에 미치는 영향)

  • Oh, Min-Jung;Han, Kyung-Soo
    • Journal of Oral Medicine and Pain
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    • v.30 no.4
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    • pp.411-426
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    • 2005
  • The purpose of this study was to investigate the effects of occlusal condition and clenching level on the mandibular torque rotational movement. For this study, healthy 14 men without any symptoms and signs of temporomandibular disorders were selected. Mandibular torque rotational movement was observed in each circumstance of combination of three occlusal conditions such as natural dentition, with wafer of 3.6 mm thickness, and wafer with resin stop of 14 mm thickness total during hard biting of bite stick at maximum voluntary contraction(MVC) and 50% of MVC level of surface EMG activity of masseter muscle. Electromyographic activity and mandibular torque rotational movement were observed using BioEMG and BioEGN in $BioPak^{(R)}$ system. Each biting movement in each circumstance was composed of clenching one time and hard biting of wooden stick two times. The observed items were opening distance, velocity and amount of torque rotational movement in mandibular movement, and the data were statistically processed with $SPSS^{(R)}$ windows (ver.10.0). The results of this study were as follows: 1. There were no differences in the mandibular movement distance between those value in both biting sides, and between those in both clenching forces, but the mandibular velocity showed a different results by clenching force. For the amount of torque rotational movement, there were no difference in the value of the frontal plane but some significant difference was in the value of the horizontal plane by biting side. 2. The mandibular movement distance and the mandibular velocity in both planes were higher by maximum voluntary contraction than those by half maximum voluntary contraction, and amount of torque rotational movement in the horizontal plane was also increased by maximum voluntary contraction. 3. The opening distance in both planes were decreased with the increase of vertical dimension of occlusion, namely, by the occlusal appliances, and this pattern was also showed in the mandibular velocity in case of hard biting by maximum voluntary contraction. However, the amount of torque rotational movement were not different by the increase of vertical dimension of occlusion. 4. The value of angle and distance of the torque rotational movement in the hard biting of wooden stick were generally higher than those in the clenching without wooden stick in both planes without regard to occlusal conditions and/or clenching forces.