Journal of Mechanical Science and Technology

The Korean Society of Mechanical Engineers (대한기계학회)
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Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor

  • Im Ik-Tae (Department of Automotive Engineering, Iksan National College) ;
  • Choi Nag Jung (Department of Automotive Engineering, Iksan National College) ;
  • Sugiyama Masakazu (Department of Electronic Engineering, School of Engineering, University of Tokyo) ;
  • Nakano Yoshiyaki (Research Center for Advanced Science and Technology, University of Tokyo) ;
  • Shimogaki Yukihiro (Department of Materials Engineering, School of Engineering, University of Tokyo) ;
  • Kim Byoung Ho (ADCOMTECH) ;
  • Kim Kwang-Sun (School of Mechatronics Engineering, Korea University of Technology and Education)
  • Published : 2005.06.01
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Abstract

Effects of thermal contact resistance between heater and susceptor, susceptor and graphite board in a MOCVD reactor on temperature distribution and film growth rate were analyzed. One-dimensional thermal resistance model considering thermal contact resistance and heat transfer area was made up at first to find the temperature drop at the surface of graphite board. This one-dimensional model predicted the temperature drop of 18K at the board surface. Temperature distribution of a reactor wall from the three-dimensional computational fluid dynamics analysis including the gap at the wafer position showed the temperature drop of 20K. Film growth rates of InP and GaAs were predicted using computational fluid dynamics technique with chemical reaction model. Temperature distribution from the three-dimensional heat transfer calculation was used as a thermal boundary condition to the film growth rate simulations. Temperature drop due to the thermal contact resistance affected to the GaAs film growth a little but not to the InP film growth.

Keywords

References

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