Effects of Thermal Contact Resistance on Film Growth Rate in a Horizontal MOCVD Reactor
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Im Ik-Tae
(Department of Automotive Engineering, Iksan National College)
Choi Nag Jung (Department of Automotive Engineering, Iksan National College) Sugiyama Masakazu (Department of Electronic Engineering, School of Engineering, University of Tokyo) Nakano Yoshiyaki (Research Center for Advanced Science and Technology, University of Tokyo) Shimogaki Yukihiro (Department of Materials Engineering, School of Engineering, University of Tokyo) Kim Byoung Ho (ADCOMTECH) Kim Kwang-Sun (School of Mechatronics Engineering, Korea University of Technology and Education) |
1 | White, F. M., 1991, Viscous Fluid Flow, 2nd ed., Chap. 3, McGraw-Hill, New York |
2 | Sugiyama, M., Feron, O., Sudo, S., Nakano, Y., Tada, K., Komiyama, H. and Shimogaki, Y., 2000, 'Kinetics of GaAs Metalorganic Chemical Vapor Deposition Studied by Numerical Analysis based on Experimental Reaction Data,' Jppn. J. Appl. Phys. Part 1, No. 4A, Vol. 39, pp. 1642-1649 DOI |
3 | Tirtowidjojo, M. and Pollard, R., 1988, 'Elementary Processes and Rate-limiting Factors in MOVPE of GaAs,' J. of Crystal Growth, Vol. 93, No. 1-4, pp. 108-114 DOI ScienceOn |
4 | Shimizu, E., Sugawara, S. and Nakata, H., 2004, 'Computational Analysis of Wafer Temperature Non-uniformity in MOVPE System,' J. of Crystal Growth, Vol. 266, pp. 340- 346 DOI ScienceOn |
5 | Sugiyama, M., Kusunoki, K., Shimogaki, Y., Sudo, S., Nakano, Y., Nagamoto, H., Sugawara, K., Tada, K. and Komiyama, H., 1997, 'Kinetic Studies on Thermal Decomposition of MOVPE Sources Using Fourier Transform infrared Spectroscopy,' Applied Surface Science, Vol. 117/118, pp. 746-752 DOI ScienceOn |
6 | Mountziaris, T. J. and Jenson, K. F., 1991, 'Gas-phase and Surface Reaction Mechanisms in MOCVD of GaAs with Trimethylgallium and Arsine,' J. of the Electrochemical Society, Vol. 138, No. 8, pp. 2426-2438 DOI |
7 | Oh, H. J., Sugiyama, M., Nakano, Y. and Shimogaki, Y., 2003, 'Surface reaction kinetics in metalorganic vapor phase epitaxy of GaAs through analyses of growth rate profile in wide-gap selective-area growth,' Jpn. J. Appl. Phys., Vol. 42, pp.6284-6291 DOI |
8 | Ozisik, M. N., 1991, Heat Transfer, A Basic Approach, Chap. 1, McGraw-Hill, New York |
9 | Poling, B. E., Prausnitz, J. M., O'connell, J. P., 2001, The Properties of gases and liquids, p. 9.4, McGraw-Hill, Boston |
10 | Mucciato, R. and Lovergine, N., 2000, 'Detailed Thermal Boundary Conditions in the 3D Fluid-dynamics Modelling of Horizontal MOVPE Reactors,' J. of Crystal Growth, Vol. 221, pp.758-764 DOI ScienceOn |
11 | Oh, H. J., Sugiyama, M., Nakano, Y. and Shimogaki, Y., 2003, 'Comparison of Organic and Hydride Group V Precursors in Terms of Surface Kinetics in Wide-gap Selective Area Metalorganic Vapor Phase Epitaxy,' Jpn. J. Appl. Phys., Vol. 42, pp. L1195- L1197 DOI ScienceOn |
12 | Im, I. -T., Oh, H. J., Sugiyama, M., Nakano, Y. and Shimogaki, Y., 2004, 'Fundamental Kinetics Determining Growth Rate Profiles of InP and GaAs in MOCVD with Horizontal Reactor,' J. of Crystal Growth, Vol. 261, pp. 214-224 DOI ScienceOn |
13 | Feron, O., Sugiyama, M., Aswamethapant, W., Futakuchi, N., Feurprier, Y., Nakano, Y. and Shimogaki, Y., 2000, 'MOCVD of InGaAsP, InGaAs, InGaP over InP and GaAs Substrates : Distribution of Composition and Growth rate in a Horizontal Reactor,' Appl. Surf. Sci., Vol. 159-160, pp. 318-327 DOI ScienceOn |
14 | Kleijn, C. R., 1994, Chap. 4 in Computational Modeling in Semiconductor Processing, Meyyappan, M. ed., Artech House, Boston |
15 | Lum, R. M., Mcdonald, M. L., Mack, E. M., Williams, M. D., Storez, F. G. and Levkoff, J., 1995, 'Effect of Temperature on InGaAsP Alloy Composition,' J. of Electronic Materials, Vol. 24, No. 11, pp. 1577-1581 DOI |
16 | Madhusudana, C. V., 1996, Thermal Contact Resistance, Chap. 4, Springer-Verlag, New York |
17 | FLUENT is a Product of Fluent Inc., 2003, 10, Cavendish Court, Lebanon, NH, USA |
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