• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.264-275
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• 2008

Electron mobility has been investigated theoretically in undoped double-gate (DG) MOSFETs of different channel architectures: a relaxed-Si DG SOI, a strained-Si (sSi) DG SSOI (strained-Si-on-insulator, containing no SiGe layer), and a strained-Si DG SGOI (strained-Si-on-SiGe-on-insulator, containing a SiGe layer) at 300K. Electron mobility in the DG SSOI device exhibits high enhancement relative to the DG SOI. In the DG SGOI devices the mobility is strongly suppressed by the confinement of electrons in much narrower strained-Si layers, as well as by the alloy scattering within the SiGe layer. As a consequence, in the DG SGOI devices with thinnest strained-Si layers the electron mobility may drop below the level of the relaxed DG SOI and the mobility enhancement expected from the strained-Si devices may be lost.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.9
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• pp.837-840
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• 2015

Graphene is a single layer of carbon material which shows very high electron mobility, so many kinds of research on the devices using graphene layer have been performed so far. Graphene material is adequate for high frequency and fast operation devices due to its higher mobility. In this research, the actual graphene layer is evaluated using RT-CVD method which can be available for mass production. The mobility of $7,800cm^2/Vs$ was extracted, that is more than 7 times of that in silicon substrate. The graphene transistor model having no band gap is evaluated using both of pMOS and nMOS based on the measured mobility values. And then the response of graphene transistor model regarding to gate length and width is examined.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.4
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• Korean Journal of Materials Research
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• v.13 no.1
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• pp.11-17
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• 2003

DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.6
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• pp.424-429
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• 1987

It has been observed that the reduction rate of the inversion layer carrier mobility due to the increase of the longitudinal electric field(drain to source direction) decreases as the transverse electric field increases. The effects of this physicar phenomenon to the I-V characteristics of the short channel NMOSFET are studied. It is shown that these effects increase the drain Current in the saturatio region, which agrees with the genarally observed decrepancy between the experimental I-V charateristics and the I-V modeling which dose not include this physical phenomenon. Also it is shown that this effect becomes more important when the device channel length decreases and the device operates in the high electric field range.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.182-188
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• 2006

An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 nm gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpropagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.

• Journal of Digital Contents Society
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• v.5 no.1
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• pp.22-27
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• 2004

To handle the high level radioactive materials such a spent fuel, the master-slave manipulaters (MSM) are wide1y used as a remote handling device in nuclear facilities such as the hot cell with sealed and shielded space. In this paper, the Digital Mockup which simulates the remote operation of the Advanced Conditioning Process(ACP) is developed. Also, the workspace and the motion of the slave manipulator, as well as, the remote operation task should be analyzed. The process equipment of ACP and Maintenance/Handling Device are drawn in 3D CAD model using IGRIP. Modeling device of manipulator is assigned with various mobile attributes such as a relative position, kinematics constraints, and a range of mobility. The 3D graphic simulator using the extermal input device of spare ball displays the movement of manipulator. To connect the exterral input device to the graphic simulator, the interface program of external input device with 6 DOF is deigned using the Low Level Tele-operation Interface(LLTI). The experimental result show that the developed simulation system gives much-improved human interface characteristics and shows satisfactory reponse characteristics in terms of synchronization speed. This should be useful for the development of work`s education system in the environment.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2003.11a
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• pp.388-394
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• 2003

To handle the high level radioactive materials such a spent fuel, the master-slave manipulators (MSM) are widely used as a remote handling device in nuclear facilities such as the hot cell with sealed and shielded space. In this paper, the Digital Mockup which simulates the remote operation of the Advanced Conditioning Process(ACP) is developed. Also, the workspace and the motion of the slave manipulator, as well as, the remote operation task should be analyzed. The process equipment of ACP and Maintenance/Handling Device are drawn in 3D CAD models using IGRIP. Modeling device of manipulator is assigned with various mobile attributes such as a relative position, kinematics constraints, and a range of mobility, The 3D graphic simulator using the external input device of space ball displays the movement of manipulator. To connect the external input device to the graphic simulator, the interface program of external input device with 6 DOF is deigned using the Low Level Tele-operation Interface(LLTI). The experimental result shows that the developed simulation system gives much-improved human interface characteristics and shows satisfactory response characteristics in terms of synchronization speed. This should be useful for the development of work's education system in the virtual environment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.