• 센서학회지
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• 제30권6호
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• pp.441-445
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• 2021

The components affecting the extrinsic transconductance (g_{m_ext}) in In_0.7Ga_0.3As quantum-well (QW) high-electron-mobility transistors (HEMTs) on an InP substrate were investigated. First, comprehensive modeling, which only requires physical parameters, was used to explain both the intrinsic transconductance (g_{m_int}) and the g_{m_ext} of the devices. Two types of In_0.7Ga_0.3As QW HEMT were fabricated with gate lengths ranging from 10 ㎛ to sub-100 nm. These measured results were correlated with the modeling to describe the device behavior using analytical expressions. To study the effects of the components affecting g_{m_int}, the proposed approach was extended to projection by changing the values of physical parameters, such as series resistances (R_S and R_D), apparent mobility (𝜇_{n_app}), and saturation velocity (𝜈_sat).

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.264-275
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• 2008

Electron mobility has been investigated theoretically in undoped double-gate (DG) MOSFETs of different channel architectures: a relaxed-Si DG SOI, a strained-Si (sSi) DG SSOI (strained-Si-on-insulator, containing no SiGe layer), and a strained-Si DG SGOI (strained-Si-on-SiGe-on-insulator, containing a SiGe layer) at 300K. Electron mobility in the DG SSOI device exhibits high enhancement relative to the DG SOI. In the DG SGOI devices the mobility is strongly suppressed by the confinement of electrons in much narrower strained-Si layers, as well as by the alloy scattering within the SiGe layer. As a consequence, in the DG SGOI devices with thinnest strained-Si layers the electron mobility may drop below the level of the relaxed DG SOI and the mobility enhancement expected from the strained-Si devices may be lost.

• 한국전자파학회논문지
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• 제26권9호
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• pp.837-840
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• 2015

그래핀은 한 원자 두께의 탄소재료로서 전자가 매우 빠른 속도로 이 층을 통과할 수 있기 때문에, 트랜지스터를 비롯한 다양한 디바이스 응용을 위한 연구가 수행되어 왔다. 높은 전자이동도 특성으로 인해 높은 주파수 대역이나 고속 스위치 등의 시스템 응용에 적합하다. 본 연구에서는 양산에 적합한 RT-CVD(Rapid Thermal Chemical Vapor Deposition) 공정을 이용하여 실리콘 기판 상에 그래핀 층을 형성하고, 다양한 공정조건 최적화를 통해 $7,800cm^2/Vs$의 전자이동도를 추출하였다. 이는 실리콘 기판의 7배 이상 되는 값이고, GaAs 기판보다도 높은 수치이다. 밴드갭이 존재하지 않는 그래핀 기반 트랜지스터 모델링을 위해 pMOS와 nMOS의 모델을 융합하여 적용하였고, 실험을 통해 추출된 전자이동도 값을 적용하였다. 추출된 모델을 이용하여 트랜지스터의 핵심 파라미터 중의 하나인 게이트의 길이와 폭 등에 따른 전기적 특성을 고찰하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제13권4호
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• pp.342-354
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• 2013

The aim of this work is to investigate and study the quantum effects in the modeling of nanoscale symmetric double-gate InAlAs/InGaAs/InP HEMT (High Electron Mobility Transistor). In order to do so, the carrier concentration in InGaAs channel at gate lengths ($L_g$) 100 nm and 50 nm, are modelled by a density gradient model or quantum moments model. The simulated results obtained from the quantum moments model are compared with the available experimental results to show the accuracy and also with a semi-classical model to show the need for quantum modeling. Quantum modeling shows major variation in electron concentration profiles and affects the device characteristics. The two triangular quantum wells predicted by the semi-classical model seem to vanish in the quantum model as bulk inversion takes place. The quantum effects thus become essential to incorporate in nanoscale heterostructure device modeling.

• 한국재료학회지
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• 제13권1호
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• pp.11-17
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• 2003

DC characteristics of recessed gate 4H-SiC MESFET were investigated using the device/circuit simulation tool, PISCES. Results of theoretical calculation were compared with the experimental data for the extraction of modeling parameters which were implemented for the prediction of DC and gate leakage characteristics at high temperatures. The current-voltage analysis using a fixed mobility model revealed that the short channel effect is influenced by the defects in SiC. The incomplete ionization models are found out significant physical models for an accurate prediction of SiC device performance. Gate leakage is shown to increase with the device operation temperatures and to decrease with the Schottky barrier height of gate metal.

• 대한전기학회논문지
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• 제36권6호
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• pp.424-429
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• 1987

It has been observed that the reduction rate of the inversion layer carrier mobility due to the increase of the longitudinal electric field(drain to source direction) decreases as the transverse electric field increases. The effects of this physicar phenomenon to the I-V characteristics of the short channel NMOSFET are studied. It is shown that these effects increase the drain Current in the saturatio region, which agrees with the genarally observed decrepancy between the experimental I-V charateristics and the I-V modeling which dose not include this physical phenomenon. Also it is shown that this effect becomes more important when the device channel length decreases and the device operates in the high electric field range.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.182-188
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• 2006

An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 nm gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpropagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.

• 디지털콘텐츠학회 논문지
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• 제5권1호
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• pp.22-27
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• 2004

밀폐 및 차폐 공간을 갖는 핫셀에서 사용후핵연료와 같은 고방사선 물질을 취급하고 있으며, 핵주기시설에서 마스터-슬레이브 매니퓰레이터는 원격취급장비로서 널리 사용되고 있다. 본 연구에서는 차세대관리공정의 디지털 목업을 구축하고 원격유지보수를 위한 매니퓰레이터의 작업영역 및 작업분석을 수행하였다. 실제 환경과 동일한 가상 작업환경을 갖는 디지털 목업은 3차원 그래픽으로 모델링된 공정장치 및 원격 취급장비들로 구성된다. 모델링된 매니퓰레이터는 기구학 및 동작범위에 대한 속성을 부여되고 외부 입력장치는 space ball을 사용하여 매니퓰레이터의 동작을 구현하였다. 또한 Tele-operation 인터페이스를 사용하여 6축 외부 입력장치와 연계한 시스템을 개발하였으며 외부 입력에 따른 매니퓰레이터의 동작에 대한 동기는 만족할 만한 응답을 보였다. 이는 가상환경에서 작업자 교육을 위한 시스템 개발에 유용할 것이다.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2003년도 가을 학술논문집
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• pp.388-394
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• 2003

밀폐 및 차폐 공간을 갖는 핫셀에서 사용후핵연료와 같은 고방사선 물질을 취급하고 있으며, 핵주기시설에서 마스터-슬레이브 매니퓰레이터는 원격취급장비로서 널리 사용되고 있다. 본 연구에서는 차세대관리공정의 디지털 목업을 구축하고 원격유지보수를 위한 매니퓰레이터의 작업영역 및 작업분석을 수행하였다. 실제 환경과 동일한 가상 작업환경을 갖는 디지털 목업은 3차원 그래픽으로 모델링 된 공정장치 및 원격 취급장비들로 구성된다. 모델링 된 매니퓰레이터는 기구학 및 동작범위에 대한 속성을 부여되고 외부 입력장치는 space ball을 사용하여 매니퓰레이터의 동작을 구현하였다. 또한, Tele-operation 인터페이스를 사용하여 6축 외부 입력장치와 연계한 시스템을 개발하였으며 외부 입력에 따른 매니퓰레이터의 동작에 대한 동기는 만족할 만한 응답을 보였다. 이는 가상환경에서 작업자 교육을 위한 시스템 개발에 유용할 것이다.

• 한국전기전자재료학회논문지
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• 제33권2호
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.