• Title/Summary/Keyword: High Speed Switching

Search Result 666, Processing Time 0.021 seconds

Multi-step Modulation Techniques in PWM Inverter for a Variable-Speed Induction Motor Driving (가변속 유도전동기의 구동을 위한 PWM인버터의 다단변조 기법)

  • 박충규;정헌상;김국진;정을기;손진근
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.6 no.6
    • /
    • pp.32-41
    • /
    • 1992
  • In this paper, an advanced Pulse Width Modulation Inverter strategy for driving a variable-speed induction motor is introduced. A switching pattern making use of the near-proportionality of voltage and frequency in AC machines operating with constant flux was computed. At low magnitudes and ow frequencies of the fundamental, many more harmonics are eliminated than at high magnitudes and frequencies. In order to keep the inverter switching frequency constant over the output frequency range, the chopping frequency is diminished as the frequency of the fundamental increases. Using these modulation strategy, the harmonics components of PWM inverter are efficiently eliminated.

  • PDF

Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs (4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석)

  • Kang, Min-Seok;Moon, Kyoung-Sook;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.23 no.6
    • /
    • pp.436-439
    • /
    • 2010
  • SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

A Study on High-voltage Low-power Power MOSFET of Optimization for Industrial Motor Drive (산업용 모터 구동을 위한 고내압 저전력 Power MOSFET 최적화 설계에 관한 연구)

  • Kim, Bum-June;Chung, Hun-Suk;Kim, Seong-Jong;Jung, Eun-Sik;Kang, Ey-Goo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.3
    • /
    • pp.170-175
    • /
    • 2012
  • Power MOSFET is develop in power savings, high efficiency, small size, high reliability, fast switching, low noise. Power MOSFET can be used high-speed switching transistors devices. Recently attention to the motor and the application of various technologies. Power MOSFET is devices the voltage-driven approach switching devices are design to handle on large power, power supplies, converters, motor controllers. In this paper, design the 600 V Planar type, and design the trench type for realization of low on-resistance. For both structures, by comparing and analyzing the results of the simulation and characterization.

The Constant Output Power Control of SSRT FB DC-DC Converter by an Improved Phase-shift Control (개선된 위상 천이 제어에 의한 소프트 스위칭 공진형 FB DC-DC 컨버터의 정출력 제어)

  • 신동률;조용길;김동완;우정인
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
    • /
    • v.14 no.5
    • /
    • pp.27-35
    • /
    • 2000
  • This paper deals with a control strategy for constant output power of SSRT(Soft Switching Resonant Type) FB(Full Bridge) DC-DC converter by an improved phase shift controller. When the FB DC-DC converter for the high density and the high effect control is operated in high speed switching, the switching loss and switching stress of the switching devices are increased. So, the soft switching method, which has the phase shift control with the digital I-PD controller, must be use in order to reduce its. And the output voltage that controlled by the digital I-PD controller tracks a reference without steady state error in variable input voltage. The validity of control strategy that proposed is verified from simulation results and experimental results by the DSP(TMS320C32).

  • PDF

Simultaneous Switching Characteristic Analysis and Design Methodology of High-Speed & High-Density CMOS IC Package (고밀도 고속 CMOS 집적회로에서 동시 스위칭에 의한 패키지 영향해석 및 패키지 설계방법)

  • 박영준;최진우;어영선
    • Journal of the Korean Institute of Telematics and Electronics C
    • /
    • v.36C no.11
    • /
    • pp.55-63
    • /
    • 1999
  • A new CMOS If Package design methodology is presented, analyzing the electrical characteristics of a package and its effects on the CMOS digital circuits. An analytical investigation of the package noise effects due to the simultaneous switching of the gates within a chip, i.e., simultaneous switching noise (SSN) is performed. Then not only are novel design formula to meet electrical constraints of the Package derived, but also package design methodology based on the formula is proposed. Further, in order to demonstrate the Proposed design methodology, the design results are compared with HSPICE (a general purpose circuit simulator) simulation for $0.3\mu\textrm{m}$-based CMOS circuits. According to the proposed design procedures, it is shown that the results have excellent agreements with those of HSPICE simulation.

  • PDF

Use of 1.7 kV and 3.3 kV SiC Diodes in Si-IGBT/ SiC Hybrid Technology

  • Sharma, Y.K.;Coulbeck, L.;Mumby-Croft, P.;Wang, Y.;Deviny, I.
    • Journal of the Korean Physical Society
    • /
    • v.73 no.9
    • /
    • pp.1356-1361
    • /
    • 2018
  • Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

Characteristics of RC Circuit with Transistors in Micro-EDM (트랜지스터 부착 RC 방전회로의 마이크로 방전가공 특성)

  • Cho Pil Joo;Yi Sang Min;Choi Deok Ki;Chu Chong Nam
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.21 no.12
    • /
    • pp.44-51
    • /
    • 2004
  • In a micro-EDM, it is well known that an RC circuit is suitable as a discharge circuit because of its low pulse width and relatively high peak current. To increase machining speed without changing unit discharge energy, charge resistance should be decreased. But, when the resistance is very low, continuous (or normal) arc discharge occurs, electrode wear increases and machining speed is reduced remarkably. In this paper, an RC circuit with transistors is used in a micro-EDM. Experimental results show that the RC circuit with transistors can cut off a continuous (o. normal) arc discharge effectively if the duty factor and switching period of the transistor are set up optimally. Through experiments with varying charge resistances, it is shown that the RC circuit with transistors has about two times faster machining speed than that of an RC circuit.

A Study on the High Performance Driving of Variable Speed Control for Induction Motor used Microprocessor (마이크로 프로세서에 의한 가변속 유도 전동기의 고효율 운전에 관한 연구)

  • Yoon, Byong-Do;Choi, Sung-Jun;Kim, Eel-Hwan
    • Proceedings of the KIEE Conference
    • /
    • 1989.07a
    • /
    • pp.576-578
    • /
    • 1989
  • This paper describes a new pwm scheme of variable speed control for induction motor. The proposed scheme have the programmed pwm switching pattern which have the doninant harmonic elimination over the wide range of output speed in induction motor. Experimental results of proposed scheme hare high quality output current, voltage and torque than that of conventional pwm scheme. Therefore proposed scheme have the smooth operation and suitable for variable speed control in induction motor.

  • PDF

A Study of Optimum Design for High-Speed Small Solenoid Valve (고속 소형 솔레노이드 밸브의 최적 설계에 관한 연구)

  • Jin, Jeong-Hwan;Kwon, Jong-Hyuk;Baek, Dong-Gi;Seong, Sei-Jin
    • Proceedings of the KIEE Conference
    • /
    • 1996.07a
    • /
    • pp.534-536
    • /
    • 1996
  • In this paper we describe the method of optimum design for high-speed solenoid valve with fast switching time. The method of mathematical analysis adopted in this paper is that of using the permeance variation in the solenoid. And the effects of design particulars are investigated by simulation experiments. On the basis of experimental results we obtain the effective value of design parameter for high-speed solenoid valve.

  • PDF

Position Control of a Hydraulic Cylinder by a Differential PWM Method (차동PWM방식에 의한 유압실린더의 위치제어)

  • 권기수;이창돈;이진걸
    • Journal of Advanced Marine Engineering and Technology
    • /
    • v.15 no.4
    • /
    • pp.54-69
    • /
    • 1991
  • This study deals with the position control of a hydraulic cylinder system operated by two port 3-way high speed solenoid valve in Pulse-Width-Modulation mode, instead of using conventional electro-hydraulic servovalve. Due to the complexity and the relatively poor reliability of the servovalve, an actuator using simpler and more study high speed solenoid valve will be presented. The high speed solenoid valve acts as converters of electronic pulse signal to hydraulic ones. It has been pointed out that there are practical problems to be solved in the PWM system, that is (1) accuracy of positioning control becomes considerably insufficient because the system is affected by on/off action of the solenoid valves, and (2) serious nonlinerality appears in the valve characteristics as a result of the switching behavior of the valves. As a method to overcome these defects, the differential PWM driving method of a hydraulic cylinder that improved the steady-state-error, flow rate nonlinearity in simple PWM, and the hydraulic hunting of dead time compensated-PWM driving is proposed in this study.

  • PDF