• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.132-132
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• 2008

Silicon carbide (SiC) is an attractive material for high-power, high-temperature, and high-frequency applications. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, the surface potential and topography distributions SiC with different doping levels were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip and a metal defined electrical contacts of Au onto SiC. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the Au deposited on SiC surface was higher than that of original SiC surface. The dependence of the surface potential on the doping levels in SiC, as well as the variation of surface potential with respect to the schottky barrier height has been investigated. The results confirm the concept of the work function and the barrier heights of metal/SiC structures.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.4
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• pp.799-804
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• 2016

To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.123-129
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• 2003

Thin transparent Cu films in the thickness range of 10 ~ 40 nm are deposited by rf-magnetron sputtering on porous silicon (PS) anodized on p-type silicon in dark. Microstructural features of the Cu films are investigated using SEM, AFM and XRD techniques. The RMS roughness of the Cu films is found to be around 1.47 nm and the grain growth is columnar with a (111) preferred orientation and follows the Volmer-Weber mode. The photoluminescence studies showed that a broad luminiscence peak of PS near the blue-green region gets blue shifted (~0.05 eV) with a small reduction in intensity and therefore, Cu-related PL quenching is absent. The FTIR absorption spectra on the PS/Cu structure revealed no major change of the native PS peaks but only a reduction in the relative intensity. The I-V characteristic curves further establish the Schottky nature of the diode with an ideality factor of 2.77 and a barrier height of 0.678 eV. An electroluminiscence (EL) signal of small intensity could be detected for the above diode.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• ETRI Journal
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• v.39 no.6
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• pp.866-873
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• 2017

We propose a multilayered-substrate-based power semiconductor discrete device package for a low switching loss and high heat dissipation. To verify the proposed package, cost-effective, low-temperature co-fired ceramic, multilayered substrates are used. A bare die is attached to an embedded cavity of the multilayered substrate. Because the height of the pad on the top plane of the die and the signal line on the substrate are the same, the length of the bond wires can be shortened. A large number of thermal vias with a high thermal conductivity are embedded in the multilayered substrate to increase the heat dissipation rate of the package. The packaged silicon carbide Schottky barrier diode satisfies the reliability testing of a high-temperature storage life and temperature humidity bias. At $175^{\circ}C$, the forward current is 7 A at a forward voltage of 1.13 V, and the reverse leakage current is below 100 lA up to a reverse voltage of 980 V. The measured maximum reverse current ($I_{RM}$), reverse recovery time ($T_{rr}$), and reverse recovery charge ($Q_{rr}$) are 2.4 A, 16.6 ns, and 19.92 nC, respectively, at a reverse voltage of 300 V and di/dt equal to $300A/{\mu}s$.

• Animal Bioscience
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• v.35 no.11
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• pp.1711-1724
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• 2022

Objective: The present study was to evaluate the effects of different rapeseed meal substitution (RSM) and glutamine (Gln) supplementation on growth performance, intestine morphology, and intestinal mucosa barrier of broilers. Methods: Four hundred and twenty Qiandongnan Xiaoxiang Chicken at 1 day of age with similar weight were chosen and were randomly assigned into 7 groups, consisting of 10 replicates per group and 6 broilers per replicate. Three groups were provided with diets separately containing 0%, 10%, and 20% RSM, and the other four groups were fed with diets separately supplemented with 0.5% and 1% Gln based on the inclusion of 10% and 20% RSM. At 21 and 42 days of age, 10 broilers per group were chosen to collect plasma and intestinal samples for further analysis. Results: The results showed that 10% RSM decreased average daily feed intake (ADFI) and average daily weight gain (ADG) of broilers at 21 days of age (p<0.05). Furthermore, both ADFI and ADG of broilers at 21 and 42 days of age were decreased by 20% RSM, while feed conversion ratio (FCR) was increased (p<0.05). Besides, 10% RSM resulted in lower intestinal villus height and the ratio of villus height to crypt depth, deeper crypt depth (p<0.05), combined with the lower mRNA expressions of occludin, claudin-1, and zonula occludens-1 (ZO-1) in broilers at 21 days of age (p<0.05). Similar results were also observed in broilers at 21 and 42 days of age fed with 20% RSM. However, 1% Gln improved the growth performance of broilers fed with 10% and 20% RSM (p<0.05), ameliorated intestine morphology and elevated mRNA expressions of occludin, claudin-1 and ZO-1 (p<0.05). Conclusion: In conclusion, the increasing inclusion of RSM resulted in more serious effects on broilers, however, 1.0% Gln could reverse the negative effects induced by the inclusion of RSM.

• Journal of the Korean Society of Surveying, Geodesy, Photogrammetry and Cartography
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• v.34 no.5
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• pp.457-469
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• 2016

Nakdong river barrage was affected by artificial interference such as construction of port, industrial complex and estuary barrage. This change in Nadong river lead to environmental changes and affected the ability of barrier islands. Therefore, it is decided that the observation of changes in the Nakdong river estuary is very important. In this paper, the topographic change of the Nakdong river barrage observe based on Landsat TM, ETM+ images from 1984 to 2015. In addition, this study tried to conduct a comparative analysis on the area for change of sandy sediment according to tide level. This results could estimate height and volume about sandy sediment accumulated on the lower sand dune. Also, these results are expected to be the basis for prediction of the changing topography of the sand dune. The area of the average change in region 1,2,3 was calculated as 3,015m², 167,550m², 14,596m². This result is expected to be very useful for the continuous observation for sediment changes of Nakdong river.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.130-135
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• 2006

We theoretically demonstrate that the interlayer exchange coupling (IEC) energy can be manipulated by means of an external bias voltage in a $F_1/NM/F_2/S$$(F_1:ferromagnetic,\;NM:nonmagnetic\;metallic,\;F_2:ferromagnetic,\;S:semiconductor\;layers)$ four-layer system. It is well known that the IEC energy between two ferromagnetic layers separated by nanometer thick nonmagnetic layer depends on the spin-dependence of reflectivity to the $F_1/NM/F_2/S$ four-layer system, where the reflectivities at the interface in $NM/F_2$ interface also depends on $F_2/S$ interface due to the multiple reflection of an electron-like optics. Finally, the IEC energy depends on the spin-dependent electron reflectivity not only at the interfaces of $F_1/NM/F_2$, but also at the interface of $F_2/S$. Naturally the Schottky barrier is formed at the interface between metallic ferromagnetic layer and semiconductor, the Schottky barrier height and thickness can be tailored by an external bias voltage, which causes the change of the spin-dependent reflectivity at $F_2/S$ interface. We show that the IEC energy between two ferromagnetic layers can be controlled by an external bias voltage due ti the electron-optics nature using a simple free-electron-like one-dimensional model.

• Journal of Korean Society on Water Environment
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• v.35 no.6
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• pp.470-480
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• 2019

The Doam lake watershed was designated as a non-point pollution management area in 2007 to improve water quality based on watershed management implementation. There have been studies of non-point source reduction with respect to the watershed management impacting the pollutant transport of the reservoir. However, a little attention has been focused on the impact of water quality improvement by the management of the dam operation or the guidelines on the dam operation. In this study, the impact of in-lake management practices combined with watershed management is analyzed, and the appropriate guidelines on the operation of the dam are suggested. The integrated modeling system by coupling with the watershed model (HSPF) and reservoir water quality model (CE-QUAL-W2) was applied for analyzing the impact of water quality management practices. A scenario implemented with sedimentation basin and suspended matter barrier showed decrease in SS concentration up to 4.6%. The SS concentration increased in the scenarios adjusting withdrawal location from EL.673 m to the upper direction(EL.683 m and EL.688 m). The water quality was comparably high when the scenario implemented all in-lake practices with water intake at EL.673 m. However, there was improvement in water quality when the height of the water intake was moved to EL.688 m during the summer by preventing sediments inflow after the rainfall. Therefore, to manage water quality of the Doam lake, it is essential to control the water quality by modulating the height of water intake through consistent turbidity monitoring during rainfall.

• Journal of the Korean Solar Energy Society
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• v.38 no.6
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• pp.51-63
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• 2018

Nowadays the bifacial PV system market and its applications are increasing rapidly. The performance of the bifacial PV system take advantage of its rear surface irradiance. Also, the ground albedo, PV module tilt and azimuth, PV module installation height, shading effect and module temperature are factors of bifacial PV system performance. This paper investigates how the performance of bifacial PV system is influenced by above factors. First, we analyzed the energy yield depending on PV module installation by simulation. Secondly, we compare energy performance evaluation of monofacial and bifacial module on different weather condition by experiment. Thirdly, we tested the albedo effect and checked operating characteristics using Dupont Tyvek material for the bifacial PV module. Fourthly, we check the shading effect of bifacial PV module on bypass diode operating. Finally, we applied the bifacial PV module in the nearby subway station for the noise reduction barrier using a qualified simulation program. In summary, we confirm that the energy performance superiority of the bifacial PV module has a lot of application use including road. Also, we have confirmed the bifacial module and inverter design should be considered by rear surface irradiance.