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http://dx.doi.org/10.3740/MRSK.2017.27.1.48

Characterization of the Schottky Barrier Height of the Pt/HfO2/p-type Si MIS Capacitor by Internal Photoemission Spectroscopy  

Lee, Sang Yeon (Department of Energy Systems Research, Ajou University)
Seo, Hyungtak (Department of Energy Systems Research, Ajou University)
Publication Information
Korean Journal of Materials Research / v.27, no.1, 2017 , pp. 48-52 More about this Journal
Abstract
In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.
Keywords
internal photoemission spectorscopy; $HfO_2$; capacitor; MOS;
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1 G. Jegert, A. Kersch, W. Weinreich and P. Lugli, J. Appl. Phys., 109, 014504 (2011).   DOI
2 S. K. Kim, S. W. Lee, J. H. Han, B. Lee, S. Han and C. S. Hwang, Adv. Funct. Mater., 20, 2989 (2010).   DOI
3 H. J. Cho, Y. D. Kim, D. S. Park, E. Lee, C. H. Park, J. S. Jang, K. B. Lee, H. W. Kim, Y. J. Ki, I. K. Han and Y. W. Song, Solid-State Electron., 51, 1529 (2007).   DOI
4 J. Wu, L. F. Register and E. Rosenbaum, Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International, 389, (1999).
5 C. Ho Jin, K. Young Dae, P. Dong Su, L. Euna, P. Cheol Hwan, J. Jun Soo, L. Keum Bum, K. Hai Won, C. Soo Jin, K. Young Jong, H. Il Keun and S. Yong Wook, Solid-State Device Research Conference, 2006. ESSDERC 2006. Proceeding of the 36th European, 146 (2006).
6 S. Y. Lee, J. Chang, Y. Kim, H. Lim, H. Jeon and H. Seo, Appl. Phys. Lett., 105, 201603 (2014).   DOI
7 L. Gerald, S. Hyungtak, L. Sanghyun, B. F. Leslie, D. U. Marc, L. Jan, L. Pat and B. Gennadi, Jap. J. Appl. Phys., 46, 1899 (2007).   DOI
8 V. V. Afanas'ev, Internal photoemission spectroscopy : principles and applications. Elsevier: (2008).
9 V. V. Afanas'ev and A. Stesmans, J. Appl. Phys., 102, 081301 (2007).   DOI
10 W. Gopel, J. A. Anderson, D. Frankel, M. Jaehnig, K. Phillips, J. A. Schafer and G. Rocker, Surf. Sci., 139, 333 (1984).   DOI
11 N. V. Nguyen, O. A. Kirillov and J. S. Suehle, Thin Solid Films, 519, 2811 (2011).   DOI
12 N. V. Nguyen, O. Kirillov, H. D. Xiong and J. S. Suehle, AIP Conference Proceedings, 931, 308 (2007).
13 Z. Haowei, G. Bin, Y. Shimeng, L. Lin, Z. Lang, S. Bing, L. Lifeng, L. Xiaoyan, L. Jing, H. Ruqi and K. Jinfeng, Simulation of Semiconductor Processes and Devices, 2009. SISPAD '09. International Conference on, 1, (2009).
14 V. V. Afanas'ev, M. Houssa, A. Stesmans and M. M. Heyns, J. Appl. Phys., 91, 3079 (2002).   DOI
15 E. Y. Chan, H. C. Card and M. C. Teich, Quantum Electronics, IEEE Journal of, 16, 373 (1980).   DOI
16 L. F. Register, E. Rosenbaum and K. Yang, Appl. Phys. Lett., 74, 457 (1999).   DOI
17 S. Furukawa and T. Miyasato, Phys. Rev. B, 38, 5726 (1988).   DOI
18 J. Robertson, J. Vac. Sci. Technol. B, 18, 1785 (2000).   DOI