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http://dx.doi.org/10.6109/jkiice.2016.20.4.799

Relation of Oxide Thickness and DIBL for Asymmetric Double Gate MOSFET  

Jung, Hakkee (Department of Electronic Eng., Kunsan National University)
Publication Information
Journal of the Korea Institute of Information and Communication Engineering / v.20, no.4, 2016 , pp. 799-804 More about this Journal
Abstract
To analyze the phenomenon of drain induced barrier lowering(DIBL) for top and bottom gate oxide thickness of asymmetric double gate MOSFET, the deviation of threshold voltage is investigated for drain voltage to have an effect on barrier height. The asymmetric double gate MOSFET has the characteristic to be able to fabricate differently top and bottom gate oxide thickness. DIBL is, therefore, analyzed for the change of top and bottom gate oxide thickness in this study, using the analytical potential distribution derived from Poisson equation. As a results, DIBL is greatly influenced by top and bottom gate oxide thickness. DIBL is linearly decreased in case top and bottom gate oxide thickness become smaller. The relation of channel length and DIBL is nonlinear. Top gate oxide thickness more influenced on DIBL than bottom gate oxide thickness in the case of high doping concentration in channel.
Keywords
Asymmetric Double Gate; DIBL; Poisson Equation; Top and Bottom Gate Oxide Thickness;
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