• JSTS:Journal of Semiconductor Technology and Science
• /
• v.2 no.1
• /
• pp.59-69
• /
• 2002

A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.

• Journal of the Korea Academia-Industrial cooperation Society
• /
• v.5 no.4
• /
• pp.336-339
• /
• 2004

In this paper the two-dimensional scattering rates were calculated in pseudomorphic Al/sub x//Ga/sub 1-x//As/Ga/sub y/In/sub l -y//As/GaAs heterostructure systems. The electronic states of the square quantum well were determined by the numerical self-consistent solution of Poisson's and Schrodinger's equations. The numerically obtained wave functions and energy levels were used to obtain the major two-dimensional scattering rates in this structure. Polar optical- and acoustic-phonon scattering, piezoelectric, ionized impurity and alloy scattering were considered for the first two sub-bands. The results were compared to the three-dimensional scattering rates also calculated in the same region.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.12 no.4
• /
• pp.551-561
• /
• 2001

In this paper, the large signal unified model is established for H4O GaAs pHEMT of GEC-Marconi using modified Curtice model. This unified model includes DC characteristic, small signal, and noise characteristic as various bias. Particularly, the model can simply and physically explain trans-conductance $(g_m)$ of pHEMT using modified Curtice model, and can tell the difference $g_m$, $R_ds$ at DC and these at AC through inclusion of internal RF-choke. The results of the established model built up using SDD in HP-Eessof show good agreement to the S/W measured data in DC, small signal, and noise characteristic. This model can also be applied to various computer aided analysis, such as linear simulation, 1-tone harmonic balance simulation, and multi-tone harmonic balance simulation, so the LNA(Low Noise Amplifier), oscillator, and mixer design has been shown using this model library.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2005.11a
• /
• pp.87-90
• /
• 2005

High-efficiency switched-mode circuits such as the class-E amplifier are well-known in the MHz frequency range. The class-E amplifier is a type of switching mode amplifier offering very high efficiency approaching 100%. In this paper of the class-E amplifier by using pHEMT device, the design has been done theoretically and experimentally, with simulation by using the harmonic balance method using circuit simulator. The amplifier using microstrip circuit and the pHEMT demonstrate 66% power-added- efficiency (PAE) at 2.4GHz with 17.6dBm of output power.

• Journal of IKEEE
• /
• v.16 no.2
• /
• pp.116-120
• /
• 2012

We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.

• Proceedings of the KAIS Fall Conference
• /
• 2004.06a
• /
• pp.162-164
• /
• 2004

슈뢰딩거와 포아송 방정식의 연계풀이에 의해 수치해석적으로 구한 파동함수와 에너지 준위를 이용하여 $300^{\circ}$K에서 사각우물을 형성하는 $Al_xGa_{1-x}As/Ga_yIn_{l-y}As/GaAs$ HEMT 소자 채널 영역에서의 극성광학 포논, 음향 포논, 압전 산란, 이은화된 불순물 산란, 그리고 합금 산란에 대한 2차원 산란율을 계산하여, 같은 영역에서의 3차원 산란율과 비교하였다. 그 결과 bulk영역에서 가장 우세한 이온화된 불순물 산란이, 2-DEG 시스템에서 크게 감소되었음을 알 수 있었는데, 이는 변조 도핑에 의하여 이온화된 불순물을 2-DEG가 존재하는 채널영역의 불순물 양을 감소시켰기 때문으로 해석된다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.3
• /
• pp.189-198
• /
• 2006

A new analytical model has been proposed for predicting the sheet carrier density of Metal insulator Semiconductor High Electron Mobility Transistor (MISHEMT). The model takes into account the non-linear relationship between sheet carrier density and quasi Fermi energy level to consider the quantum effects and to validate it from subthreshold region to high conduction region. Then model has been formulated in such a way that it is applicable to MESFET/HEMT/MISFET with few adjustable parameters. The model can also be used to evaluate the characteristics for different gate insulator geometries like T-gate etc. The model has been extended to forecast the drain current, conductance and high frequency performance. The results so obtained from the analysis show excellent agreement with previous models and simulated results that proves the validity of our model.

• Journal of the Korean Vacuum Society
• /
• v.20 no.5
• /
• pp.345-355
• /
• 2011

GaAs-based metamorphic high electron mobility transistors (MHEMTs) and InP-based high electron mobility transistors (HEMTs) have good microwave and millimeter-wave frequency performance with lower minimum noise figure. MHEMTs have some advantages, especially for cost, compared with InP-based ones. In this paper, InAlAs/InxGa1-xAs/GaAs MHEMTs are simulated for DC/RF small-signal analysis. The hydrodynamic simulation parameters are calibrated to a fabricated 0.1-${\mu}m$ ${\Gamma}$-gate MHEMT device having the modulation-doped $In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As$ heterostructure on the GaAs substrate, and the simulations for RF small-signal characteristics are performed, compared with the measured data, and analyzed for the devices. In addition, the simulations for the DC/RF characteristics of the MHEMTs with different gate-recess structures are performed, compared and analyzed.

• ETRI Journal
• /
• v.31 no.3
• /
• pp.342-344
• /
• 2009

From a hydrodynamic device simulation for the pseudomorphic high electron mobility transistors (pHEMTs), we observe an increase of maximum extrinsic transconductance and a decrease of source-drain capacitances. This gives rise to an enhancement of the switching speed and isolation characteristics as the upper-to-lower planar-doping ratios (UTLPDR) increase. On the basis of simulation results, we fabricate single-pole-double-throw transmitter/receiver monolithic microwave integrated circuit (MMIC) switches with the pHEMTs of two different UTLPDRs (4:1 and 1:2). The MMIC switch with a 4:1 UTLPDR shows about 2.9 dB higher isolation and approximately 2.5 times faster switching speed than those with a 1:2 UTLPDR.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.3
• /
• pp.118-123
• /
• 1995

We have successfully fabricated a super low noise pseudomorphic HEMT(PHEMT) device with AlGaAs/InGaAs/GaAs sturcture by using improved T-Gate which have increased a large gaet cross-sectional area about two times in comparision with those of conventional T-gate processes. The PHEMSTs with 0.15$\mu$m-long and 140$\mu$m-wide gates have eshibited a super low noise characteristics, the noise figure of 0.45dB with associated gain of 10.87dB at 12GHz. The cut-off rewuqncy of the device is 94gHz with a transconductance of 418mS/mm.