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http://dx.doi.org/10.7471/ikeee.2012.16.2.116

High Performance 50 nm Metamorphic HEMTs for Millimeter-wave Applications  

Ryu, Keun-Kwan (국립한밭대학교 전자.제어공학과)
Kim, Sung-Chan (국립한밭대학교 전자.제어공학과)
Publication Information
Journal of IKEEE / v.16, no.2, 2012 , pp. 116-120 More about this Journal
Abstract
We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.
Keywords
Metamorphic HEMT; 50 nm; current gain cut-off frequency; millimeter-wave;
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1 W. R. Deal, K. Leong, V. Radisic, S. Sarkozy, B. Gorospe, J. Lee, P. H. Liu, W. Yoshida, J. Zhou, M. Lange, R. Lai, X. B. Mei, "Low Noise Amplification at 0.67 THz Using 30nm InP HEMTs," IEEE Microwave and Wireless Components Letters, vol. 21, no. 7, pp. 368-370, 2011   DOI
2 K. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Matsui, T. Mimura, S. Hiyamizu, "547 GHz fT In0.7Ga0.3As/In0.52Al0.48As HEMTs with reduced source and drain resistance," IEEE Electron Device Lett., vol. 25, no. 5, pp. 241-243, 2004   DOI
3 T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki, G. Meneghesso, E. Zanoni, "30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs," IEEE Trans. Electron Devices, vol. 49, no. 10, pp. 1694-1700, 2002   DOI   ScienceOn
4 X. B. Mei, W. Yoshida, W. Deal, P. H. Liu, J. Lee, J. Uyeda, L. Dang, J. Wang, W. Liu, M. Barsky, Y. M. Kim, M. Lange, T. P. Chin, V. Radisic, T. Gaier, A. Fung, R. Lai, "35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications," Indium Phosphide & Related Materials, pp. 59-62, 2007
5 K. Shinohara, Y. Yamashita, A. Endoh, K. Hikosaka, T. Matsui, T. Mimura, and S. Hiyamizu, "Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency," IEEE Electron Device Lett., vol. 22, no. 11, pp. 507-509, 2001   DOI
6 I. Thayne, K. Elgaid, M. Holland, H. McLelland, D. Moran, S. Thoms, C. Stanley, "50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications," Indium Phosphide and Related Materials pp. 181-184, 2006
7 Axel Tessmann, "220-GHz Metamorphic HEMT Amplifier MMICs for High-Resolution Imaging Applications," IEEE J ournal of Solid-state circuits, vol. 40, no. 10, pp. 2070-2076, 2005   DOI
8 M. Zaknoune, B. Bonte, C. Gaquiere, Y. Cordier, Y. Druelle and Y. Crosnier, "InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage," IEEE Electron Device Lett., vol. 19, pp. 345-347, 1998   DOI
9 P. M. Smith, D. Dugas, K. Chu, K. Nichols, K. G. Duh, J. Fisher, L. MtPleasant, D. Xu, L. Gunter, A. Vera, R. Lender, and D. Meharry, "Progress in GaAs metamorphic HEMT technology for microwave applications," in Proc. IEEE GaAs IC Symp., pp. 21-22, 2003
10 C. S. Whelan, P. F. Marsh, W. E. Hoke, R. A. McTaggart, C. P. McCarroll, and T. E. Kazior, "GaAs metamorphic HEMT(MHEMT): an attractive alternative to InPHEMTs for high performance low noise and power applications," in Proc. Indium Phosphide and Related Materials, pp. 337-340, 2000
11 Y. Yamashita, A. Endoh, K. Shinohara, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, "Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultra high fT of 562 GHz," IEEE Electron Device Lett., vol. 23, no. 10, pp. 573-575, 2002   DOI
12 T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy, "Design and realization of sub 100 nm gate length HEMTs," Indium Phosphide and Related Materials, pp. 626-629, 2001
13 K. Shinohara, T. Matsui, T. Mimura, and S. Hiyamizu, "Novel asymmetric gate- recess engineering for sub-millimeter-wave InP-based HEMTs," IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 2159-2162, 2001
14 S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, and A. Cappy, "fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate," IEE Electron. Lett., vol. 38, no. 8, pp. 389-391, 2002   DOI
15 S. C. Kim, D. An, B. O. Lim, T. J.g Baek, D. H. Shin, J. K. Rhee, "High-Performance 94-GHz Single Balanced Mixer Using 70-nm MHEMTs and Surface Micromachined Technology," IEEE Electron Device Lett., vol. 27, no. 1, pp. 28-30, 2006   DOI   ScienceOn
16 A. Leuther, A. Tessmann, M. Dammann, W. Reinert, M. Schlechtweg, M. Mikulla, M. Walther, G. Weimann, "70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers," Indium Phosphide and Related Materials, pp. 215-218, 2003
17 A. Tessmann, A. huther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, M. Schlechtweg, "A Coplanr 94 GHz lo-noise amplifier MMIC using 0.07 um metamorphic cascode HEMTs," IEEE MTT-S Digest, pp. 1581-1584, 2003
18 H. Wang, T. N. Ton, R. Lai, D. C. W. Lo, S. Chen, D. Streit, G. S. Dow, K. L. Tan, and J. Berenz, "Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers," IEEE IEDM Dig., pp. 239-242, 1993
19 Y. C. Lien, E. Y. Chang, H. C. Chang, L. H. Chu, G. W. Huang, H. M. Lee, C. S. Lee, S. H. Chen, P. T. Shen, and C. Y. Chang, "Low-noise metamorphic HEMTs with reflowed 0.1-um T-gate," IEEE Electron Device Lett., vol. 25, no. 6, pp. 348-350, 2004   DOI