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A Self-Consistent Semi-Analytical Model for AlGaAs/InGaAs PMHEMTs  

Abdel Aziz, M. (Department Faculty of Engineering Alexandria University)
El-Banna, M. (Department Faculty of Engineering Alexandria University)
El-Sayed, M. (Department Faculty of Engineering Alexandria University)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.2, no.1, 2002 , pp. 59-69 More about this Journal
Abstract
A semi-analytical model based on exact numerical analysis of the 2DEG channel in pseudo-morphic HEMT (PMHEMT) is presented. The exactness of the model stems from solving both Schrodinger's wave equation and Poisson's equation simultaneously and self-consistently. The analytical modeling of the device terminal characteristics in relation to the charge control model has allowed a best fit with the geometrical and structural parameters of the device. The numerically obtained data for the charge control of the channel are best fitted to analytical expressions which render the problem analytical. The obtained good agreement between experimental and modeled current/voltage characteristics and small signal parameters has confirmed the validity of the model over a wide range of biasing voltages. The model has been used to compare both the performance and characteristics of a PMHEMT with a competetive HEMT. The comparison between the two devices has been made in terms of 2DEG density, transfer characteristics, transconductance, gate capacitance and unity current gain cut-off frequency. The results show that PMHEMT outperforms the conventional HEMT in all considered parameters.
Keywords
Interconnects; Doplanar strip line; Fourier series approach; silicon substrate; point matching procedure;
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