Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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High Performance 50 nm Metamorphic HEMTs for Millimeter-wave Applications

밀리미터파 응용을 위한 우수한 성능의 50 nm Metamorphic HEMTs

  • 류근관 (국립한밭대학교 전자.제어공학과) ;
  • 김성찬 (국립한밭대학교 전자.제어공학과)
  • Received : 2012.05.21
  • Accepted : 2012.06.12
  • Published : 2012.06.30
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Abstract

We reported on a high performance InGaAs/InAlAs metamorphic HEMT with 50 nm gate length on a GaAs substrate. The fabricated $50nm{\times}60{\mu}m$ MHEMT showed good DC and RF characteristics. Typical drain current density of 740 mA/mm and extrinsic transconductance(gm) of 1.02 S/mm were obtained with our devices. The current gain cut-off frequency(fT) and maximum oscillation frequency(fmax) obtained for the fabricated MHEMT device were 430 GHz and 406 GHz, respectively.

본 논문에서는 밀리미터파 응용에 사용 가능한 우수한 성능의 50 nm InGaAs/InAlAs/GaAs metamorphic HEMT를 구현하였다. 게이트 길이가 50 nm이며 단위 게이트 폭이 30 ${\mu}m$인 2개의 게이트를 가지고 있는 MHEMT의 측정결과, 740 mA/mm의 드레인 포화 전류밀도와 1.02 S/mm의 상호전달 전도도를 얻었으며 전류이득차단주파수와 최대공진주파수는 각각 430 GHz와 406 GHz의 특성을 나타내었다.

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References

  1. P. M. Smith, D. Dugas, K. Chu, K. Nichols, K. G. Duh, J. Fisher, L. MtPleasant, D. Xu, L. Gunter, A. Vera, R. Lender, and D. Meharry, "Progress in GaAs metamorphic HEMT technology for microwave applications," in Proc. IEEE GaAs IC Symp., pp. 21-22, 2003
  2. C. S. Whelan, P. F. Marsh, W. E. Hoke, R. A. McTaggart, C. P. McCarroll, and T. E. Kazior, "GaAs metamorphic HEMT(MHEMT): an attractive alternative to InPHEMTs for high performance low noise and power applications," in Proc. Indium Phosphide and Related Materials, pp. 337-340, 2000
  3. Y. Yamashita, A. Endoh, K. Shinohara, K. Hikosaka, T. Matsui, S. Hiyamizu, and T. Mimura, "Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultra high fT of 562 GHz," IEEE Electron Device Lett., vol. 23, no. 10, pp. 573-575, 2002 https://doi.org/10.1109/LED.2002.802667
  4. W. R. Deal, K. Leong, V. Radisic, S. Sarkozy, B. Gorospe, J. Lee, P. H. Liu, W. Yoshida, J. Zhou, M. Lange, R. Lai, X. B. Mei, "Low Noise Amplification at 0.67 THz Using 30nm InP HEMTs," IEEE Microwave and Wireless Components Letters, vol. 21, no. 7, pp. 368-370, 2011 https://doi.org/10.1109/LMWC.2011.2143701
  5. K. Shinohara, Y. Yamashita, A. Endoh, I. Watanabe, K. Hikosaka, T. Matsui, T. Mimura, S. Hiyamizu, "547 GHz fT In0.7Ga0.3As/In0.52Al0.48As HEMTs with reduced source and drain resistance," IEEE Electron Device Lett., vol. 25, no. 5, pp. 241-243, 2004 https://doi.org/10.1109/LED.2004.826543
  6. T. Suemitsu, H. Yokoyama, T. Ishii, T. Enoki, G. Meneghesso, E. Zanoni, "30-nm two-step recess gate InP-Based InAlAs/InGaAs HEMTs," IEEE Trans. Electron Devices, vol. 49, no. 10, pp. 1694-1700, 2002 https://doi.org/10.1109/TED.2002.803646
  7. X. B. Mei, W. Yoshida, W. Deal, P. H. Liu, J. Lee, J. Uyeda, L. Dang, J. Wang, W. Liu, M. Barsky, Y. M. Kim, M. Lange, T. P. Chin, V. Radisic, T. Gaier, A. Fung, R. Lai, "35nm InP HEMT for Millimeter and Sub-Millimeter Wave Applications," Indium Phosphide & Related Materials, pp. 59-62, 2007
  8. K. Shinohara, Y. Yamashita, A. Endoh, K. Hikosaka, T. Matsui, T. Mimura, and S. Hiyamizu, "Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency," IEEE Electron Device Lett., vol. 22, no. 11, pp. 507-509, 2001 https://doi.org/10.1109/55.962645
  9. I. Thayne, K. Elgaid, M. Holland, H. McLelland, D. Moran, S. Thoms, C. Stanley, "50 nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications," Indium Phosphide and Related Materials pp. 181-184, 2006
  10. Axel Tessmann, "220-GHz Metamorphic HEMT Amplifier MMICs for High-Resolution Imaging Applications," IEEE J ournal of Solid-state circuits, vol. 40, no. 10, pp. 2070-2076, 2005 https://doi.org/10.1109/JSSC.2005.854591
  11. M. Zaknoune, B. Bonte, C. Gaquiere, Y. Cordier, Y. Druelle and Y. Crosnier, "InAlAs/InGaAs metamorphic HEMT with high current density and high breakdown voltage," IEEE Electron Device Lett., vol. 19, pp. 345-347, 1998 https://doi.org/10.1109/55.709638
  12. K. Shinohara, T. Matsui, T. Mimura, and S. Hiyamizu, "Novel asymmetric gate- recess engineering for sub-millimeter-wave InP-based HEMTs," IEEE MTT-S Int. Microwave Symp. Dig., vol. 3, pp. 2159-2162, 2001
  13. S. Bollaert, Y. Cordier, M. Zaknoune, T. Parenty, H. Happy, S. Lepilliet, and A. Cappy, "fmax of 490 GHz metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrate," IEE Electron. Lett., vol. 38, no. 8, pp. 389-391, 2002 https://doi.org/10.1049/el:20020269
  14. S. C. Kim, D. An, B. O. Lim, T. J.g Baek, D. H. Shin, J. K. Rhee, "High-Performance 94-GHz Single Balanced Mixer Using 70-nm MHEMTs and Surface Micromachined Technology," IEEE Electron Device Lett., vol. 27, no. 1, pp. 28-30, 2006 https://doi.org/10.1109/LED.2005.861403
  15. A. Leuther, A. Tessmann, M. Dammann, W. Reinert, M. Schlechtweg, M. Mikulla, M. Walther, G. Weimann, "70 nm low-noise metamorphic HEMT technology on 4 inch GaAs wafers," Indium Phosphide and Related Materials, pp. 215-218, 2003
  16. A. Tessmann, A. huther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, M. Schlechtweg, "A Coplanr 94 GHz lo-noise amplifier MMIC using 0.07 um metamorphic cascode HEMTs," IEEE MTT-S Digest, pp. 1581-1584, 2003
  17. T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy, "Design and realization of sub 100 nm gate length HEMTs," Indium Phosphide and Related Materials, pp. 626-629, 2001
  18. H. Wang, T. N. Ton, R. Lai, D. C. W. Lo, S. Chen, D. Streit, G. S. Dow, K. L. Tan, and J. Berenz, "Low noise and high gain 94 GHz monolithic InP-based HEMT amplifiers," IEEE IEDM Dig., pp. 239-242, 1993
  19. Y. C. Lien, E. Y. Chang, H. C. Chang, L. H. Chu, G. W. Huang, H. M. Lee, C. S. Lee, S. H. Chen, P. T. Shen, and C. Y. Chang, "Low-noise metamorphic HEMTs with reflowed 0.1-um T-gate," IEEE Electron Device Lett., vol. 25, no. 6, pp. 348-350, 2004 https://doi.org/10.1109/LED.2004.829027