• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.1
• /
• pp.16-20
• /
• 2020

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.30 no.5
• /
• pp.270-275
• /
• 2017

Current progress in the development of semiconductor technology in applications involving high electron mobility transistors (HEMT) and power devices is hindered by the lack of adequate ways todissipate heat generated during device operation. Concurrently, electronic devices that use gallium nitride (GaN) substrates do not perform well, because of the poor heat dissipation of the substrate. Suggested alternatives for overcoming these limitations include integration of high thermal conductivity material like diamond near the active device areas. This study will address a critical development in the art of GaN on diamond (GOD) structure by designing for ideal heat dissipation, in order to create apathway with the least thermal resistance and to improve the overall ease of integrating diamond heat spreaders into future electronic devices. This research has been carried out by means of heat transfer simulation, which has been successfully demonstrated by a finite-element method.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.41 no.4
• /
• pp.45-50
• /
• 2004

In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.2
• /
• pp.220-223
• /
• 2016

This letter proposes a low noise amplifier which has low noise figure and high linearity simultaneously using a cascode structure with an additional transistor. The proposed structure minimizes the noise source by using optimizing transistor sizes and also improves linearity from the current bleeding technique. The device was fabricated in a $0.5{\mu}m$ GaAs pHEMT process and has noise figure of 1.1 dB, a voltage gain of 15.0 dB, an $OIP_3$ of 30.8 dBm and an input/output return loss of 11.6 dB/10.4 dB from 1.8 to 2.6 GHz.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.88-91
• /
• 2000

An MMIC oscillator operating at the 24.55 GHz has been designed using 0.2 ${\mu}{\textrm}{m}$AlGaAs/InGaAs/GaAs Pseudomorphic HEMT technology. The active device used in the oscillator design has a 0.2 ${\mu}{\textrm}{m}$ gate length PHEMT with 4$\times$80 ${\mu}{\textrm}{m}$ gate width. We obtained 4.08 dB of S$_{21}$ gain and 317 mS/mm of transconductance, and extrapolated unit current gain cut-off frequency (f$_{T}$) and maximum oscillation frequency (fmax) were 62 GHz and 120 GHz, respectively. The circuit are based on a series feedback and negative resistance topology. Microstrip line open stub is used to terminating. The oscillator circuits has designed for delivering maximum power to load and conjugated matching. The simulated small signal negative resistance was 50 Ω. We obtained 1.002 of loop gain and 0.0005$^{\circ}$angle from the simulation by HP libra 6.1. The layout for oscillator is 1.2$\times$1.8 $\textrm{mm}^2$.>.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.3
• /
• pp.182-188
• /
• 2006

An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 nm gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpropagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.

• Electronics and Telecommunications Trends
• /
• v.3 no.4
• /
• pp.3-12
• /
• 1988

Epilayer growing process has been recognized as a key technology for successful GaAs based devices and integrations. These may include HEMT, multiple quantum well structures, band gap engineering, and quantum confinement heterostructures. The fabrication of epilayers in these devices must meet very stringent requirements in terms of crystallinity, composition, film thickness and interface quality. In particular, the quality of interfaces is getting more important because the film thickness, and flatness, roughness and stability at interface of ultrathin films cause critical effects on the device performance. This article reviews the current status of modern epitaxial techniques which have been developed in the last few years. First, the new techniques PLE, GI, MEE, TSL based on MBE technique will be reviewed and their technical importance will be stressed. Secondly, MOMBE, GSMBE, CBE which combine the advantages of MBE and MOCVD will also be discussed. Thirdly, the new sophisticated epitaxial technique, ALE, of which mechanism is totally different from others, will also be reviewed. Finally, areas which should be exploited more extensively to accomplish these techniques will be addressed.

• Electronics and Telecommunications Trends
• /
• v.33 no.6
• /
• pp.34-40
• /
• 2018

Traditionally, many researchers have conducted research on terahertz technology utilizing optical devices such as lasers. However, nanometer-scale electronic devices using silicon or III-V compound semiconductors have received significant attention regarding the development of a terahertz system owing to the rapid scaling down of devices. This enables an operating frequency of up to approximately 0.5 THz for silicon, and approximately 1 THz for III-V devices. This article reviews the recent trends of terahertz monolithic integrated circuits based on several electronic devices such as CMOS, SiGe BiCMOS, and InP HBT/HEMT, and a particular quantum device, an RTD.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2000.11a
• /
• pp.225-228
• /
• 2000

In this paper, the design for a low noise amplifier with the EM simulation is presented. The ATF36077 pHEMT device is applied to design LNA for U-NII frequency band (5 GHz ～ 6 GHz). The matching networks have been designed by the only open ended stub in order to reduce parasitic effects generated from a via structure. Through EM simulator, the simulation result shows that the linear gain (@5.5 GHz) is over 10 dB, input return loss and output return loss (@ 5.5 GHz) are a below 10 dB respectively, and the 3rd order intercept point is about 17 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.24 no.11
• /
• pp.1104-1112
• /
• 2013

This paper presents a wideband Colpitts voltage controlled oscillator(VCO) with nanosecond startup time and a center frequency of 8.35 GHz for a new bubble-type motion detector that has a bubble-layer detection zone at the specific distance from itself. The VCO circuit consists of two parts; one is a negative resistance part with a HEMT device and Colpitts feedback structure and the other is a resonator part with a varactor diode and shorted shunt microstrip line. The shorted shunt microstrip line and series capacitor are utilized to compensate for the input reactance of the packaged HEMT that changes from capacitive values to inductive values at 8.1 GHz due to parasitic package inductance. By tuning the feedback capacitors which determine negative resistance values, this paper also investigates startup time improvement with the negative resistance variation and tuning bandwidth improvement with the reactance slope variation of the negative resistance part. The VCO measurement shows the tuning bandwidth of 2.3 GHz(28 %), the output power of 4.1~7.5 dBm and the startup time of less than 2 nsec.